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Proximity effect (electron beam lithography)

About: Proximity effect (electron beam lithography) is a research topic. Over the lifetime, 940 publications have been published within this topic receiving 8508 citations.


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Patent
Kimura Yasuki1
31 Mar 2005
TL;DR: In this paper, a writing pattern to be a correcting object is divided by a rough mesh for a foggy effect correction and a fine mesh for proximity effect correction, a rate of an area occupied by the pattern for each of the meshes is obtained, a stored energy based on a Foggy effect and a proximity effect in execution of exposure in a state in which a correction for a calculating object mesh is not carried out at all is calculated, an dose in the fine mesh, and the recalculation is repeated until desirable precision in a dimension is reached.
Abstract: A writing pattern to be a correcting object is divided by a rough mesh for a Foggy effect correction and a fine mesh for a proximity effect correction, a rate of an area occupied by the pattern to be written for each of the meshes is obtained, a stored energy based on a Foggy effect and a proximity effect in execution of exposure in a state in which a correction for a calculating object mesh is not carried out at all is calculated, an dose in the fine mesh for a proximity effect correction is obtained by a first calculation in such a manner that an influence of the Foggy effect and the proximity effect is reduced and a pattern and a dimension which can disregard the influence of the Foggy effect and the proximity effect are coincident with each other by the stored energy which is calculated, are calculation is carried out in such a manner that the pattern and the dimension which can disregard the influence of the Foggy effect and the proximity effect are coincident with each other with the influence of the Foggy effect and the proximity effect fixed, and the recalculation is repeated until desirable precision in a dimension is reached.

23 citations

Patent
06 Apr 1992
TL;DR: In this paper, a method for compensation for the proximity effect in electron beam lithography on an e-beam resist material is proposed, where the exposed surface is subdivided into nonoverlapping pixels of approximately equal area.
Abstract: A method for compensation for the proximity effect in electron beam lithography on an e-beam resist material. The exposed surface of the resist material is subdivided into non-overlapping pixels of approximately equal area, with a first set of pixels representing a selected pattern for e-beam lithography and a second set of pixels including all other pixels. The cumulative exposure for each pixel in the first set is computed by adding to the direct beam exposure of that pixel the contributions of spillover (backscattering) exposure arising from exposure of nearby pixels in the second set. The cumulative exposure for each pixel in the second set is computed by adding to the reduced beam exposure of that pixel the contributions of spillover exposure arising from exposure of nearby pixels in the second set. The resist material is then irradiated, pixel-by-pixel with a fixed electron beam radius, with the exposure at each pixel being equal to the cumulative exposure computed for that pixel.

23 citations

Proceedings ArticleDOI
TL;DR: In this paper, the authors proposed iridium diffraction gratings at double the line spacing of the original HSQ lines, achieving a new record resolution in photolithography, achieving 6 nm half-pitch patterns.
Abstract: EUV interference lithography records the interference pattern of two diffracted, coherent light beams, where the pattern resolution is half the diffraction grating resolution. The fabrication of diffraction grating masks by e-beam lithography is restricted by the electron proximity effect and pattern transfer limitations into diffraction efficient materials. By patterning HSQ lines at a relaxed pitch to avoid the electron proximity effect, depositing conformal iridium via atomic layer deposition, followed by ion milling the top and bottom iridium and HSQ removal, we fabricated iridium diffraction gratings at double the line spacing of the original HSQ lines. 6 nm half-pitch patterns were achieved using these masks marking a new record resolution in photolithography.

23 citations

Journal ArticleDOI
TL;DR: In this article, a self-consistent formulation and the algorithms for computation described in the two preceeding papers have been used for the automatic computation of corrections to the incident electron exposure for an arbitrary pattern is described.
Abstract: Satisfactory corrections to intershape and intrashape proximity effects in electron lithography have been experimentally obtained for a variety of patterns and geometries. The self‐consistent formulation and the algorithms for computation described in the two preceeding papers have been used. The computer program used for the automatic computation of corrections to the incident electron exposure for an arbitrary pattern is described. Pattern delineation depends on the proximity function and its parameters. They are found to be not critical in practical lithography until submicron dimensions are reached.

22 citations

Journal ArticleDOI
TL;DR: How recent developments in computer speed and architecture have improved the prospects for full-scale implementation in mask making is discussed and some numerical techniques, analogous to gridding and relaxation, that make linear programming more attractive in maskMaking are discussed.
Abstract: Proximity effect correction by dose modulation is widely practiced in electron-beam lithography. Optical proximity control is also possible using a combination of shape adjustment and phase control. Assigning “the right” dose (or fill factor and phase for optics) is a well known mathematical inverse problem. Linear programming, by definition, is the appropriate method for determining dose. In the past, the technique was too slow for full-scale implementation in mask making. Here, the authors discuss how recent developments in computer speed and architecture have improved the prospects for full-scale implementation. In addition, the authors discuss some numerical techniques, analogous to gridding and relaxation, that make linear programming more attractive in mask making.

22 citations


Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202316
202234
20214
20206
20194
20186