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Proximity effect (electron beam lithography)

About: Proximity effect (electron beam lithography) is a research topic. Over the lifetime, 940 publications have been published within this topic receiving 8508 citations.


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Patent
08 Sep 2014
TL;DR: In this paper, the exposure dose of a charged particle beam is calculated based on the proximity effect correction amount and fogging effect correction amounts, when the stored energy ratio is zero due to back scattering, and pattern arrangement data.
Abstract: PROBLEM TO BE SOLVED: To provide a charged particle beam lithography method and a charged particle beam lithography apparatus which allows for reduction in the number of pattern data being outputted while shortening the computing time, in the exposure dose correction where two phenomena of different influence areas are taken into account.SOLUTION: A proximity effect correction amount for correcting the proximity effect is calculated based on the pattern data and added thereto, and a correction amount when the stored energy ratio is zero due to back scattering is calculated. Based on the proximity effect correction amount, the correction amount when the stored energy ratio is zero due to back scattering, and pattern arrangement data, a fogging effect correction amount for correcting the fogging effect is calculated, and then the exposure dose of a charged particle beam is calculated based on the proximity effect correction amount and fogging effect correction amount.
Patent
18 Jul 2006
TL;DR: In this paper, the authors proposed a method of manufacturing a semiconductor device that can prevent the deformation of a pattern or contact failure due to optical proximity effect, and to provide a mask for exposure used for the same.
Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can prevent the deformation of a pattern or contact failure due to optical proximity effect, and to provide a mask for exposure used for the same. SOLUTION: The method includes a step to form a photo resist film 84 on a substrate 10; a step to expose a wiring pattern to the photo resist film 84; a step to expose to the photo resist film 84 a hole pattern that is provided with a plurality of holes located in the formation area of holes to be connected to the wiring pattern at the end of the wiring pattern; and a step to develop the photo resist film 84 to which the wiring pattern and the hole pattern are exposed. Thus, the shortage of exposing amount at the pattern end due to optical proximity effect is compensated, and the shortening at the pattern end can be prevented. In addition, contact to a contact plug connected to the pattern end can be ensured. COPYRIGHT: (C)2008,JPO&INPIT
Journal ArticleDOI
TL;DR: In this paper, a new method for resist contrast determination considering the relation between dissolution rate and deposited energy density is suggested and realized, by using it for PMMA resist irradiated by 30 keV Ga+ ion beam the value of contrast was determined to be 3.1 and ions energy length was estimated to be 42 nm.
Abstract: The feature of the promising tool of lithographic nanostructuring based on selective exposure of polymer resist by ion beam is very compact (of about tens of nanometers) beam interaction volume. Herewith the main part of beam energy is deposited in the resist and is spent to its modification. It causes the set of advantages specific for this method: sub-10 nanometer resolution achievable, very high energy efficiency and almost complete absence of proximity effect. But also due to this feature absorbed doze essentially inhomogeneous in resist and the dissolution rate is strongly dependent on depth. So the common procedure of resist contrast determination cannot be applied anymore. In the present work a new method for resist contrast determination considering the relation between dissolution rate and deposited energy density is suggested and realized. By using it for PMMA resist irradiated by 30 keV Ga+ ion beam the value of contrast was determined to be 3.1 and ions energy length was estimated to be 42 nm.
Patent
25 Oct 2013
TL;DR: In this paper, a method for improving the uniformity of a grating was proposed, where trapezoid compensatory figures were arranged around the grating structure by utilizing a layout design tool.
Abstract: The invention discloses a method for improving the uniformity of a grating, and particularly relates to an electron beam exposure method for improving the uniformity of a grating structure. The method comprises the steps that electron beam glue coats a wafer, and the wafer coated with the electron beam glue is placed in a baking oven to be prebaked; trapezoid compensatory figures are arranged around the grating structure by utilizing a layout design tool; electron beam exposure and development are carried out on the wafer to finish the grating structure containing the trapezoid compensatory figures. By utilizing the compensatory figures, the method weakens the influence of the proximity effect in the electron beam exposure, and the uniformity of nanometer-scale grating exposure is increased. Instead of weakening the proximity effect by changing the exposure dose and size of a figure, the proximity effect is weakened by increasing the compensatory figures around the figure in order to improve the grating exposure uniformity.
Journal ArticleDOI
19 May 2022
TL;DR: In this paper , a 3 nm thick copper oxide buffer layer made by exposing an evaporated or a sputtered 3 nm Cu film to air is inserted between the Nb electrodes and the Ni wire, the spatial extent of the superconducting proximity range is dramatically increased from 2 to a few tens of nanometers.
Abstract: When a ferromagnet is placed in contact with a superconductor owing to incompatible spin order, the Cooper pairs from the superconductor cannot survive more than 1 or 2 nm inside the ferromagnet. This is confirmed in the measurements of ferromagnetic nickel (Ni) nanowires contacted by superconducting niobium (Nb) leads. However, when a 3 nm thick copper oxide (CuO) buffer layer made by exposing an evaporated or a sputtered 3 nm Cu film to air is inserted between the Nb electrodes and the Ni wire, the spatial extent of the superconducting proximity range is dramatically increased from 2 to a few tens of nanometers. A scanning transmission electron microscope study confirms the formation of a 3 nm thick CuO layer when an evaporated Cu film is exposed to air. Magnetization measurements of such a 3 nm CuO film on a ${\mathrm{SiO}}_{2}/\mathrm{Si}$ substrate and on $\phantom{\rule{4pt}{0ex}}\mathrm{Nb}/\mathrm{Si}{\mathrm{O}}_{2}/\mathrm{Si}$ show clear evidence of ferromagnetism. One way to understand the long-range proximity effect in the Ni nanowire is that the CuO buffer layer with ferromagnetism facilitates the conversion of singlet superconductivity in Nb into triplet supercurrent along the Ni nanowires.

Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202316
202234
20214
20206
20194
20186