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Proximity effect (electron beam lithography)

About: Proximity effect (electron beam lithography) is a research topic. Over the lifetime, 940 publications have been published within this topic receiving 8508 citations.


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Proceedings ArticleDOI
06 Jul 1999
TL;DR: In this article, the authors evaluated the energy intensity distributions on thinned x-ray masks by the combination of the dot exposure and line exposure methods in 100 kV electron beam writing.
Abstract: In this work the authors have evaluated the energy intensity distributions on thinned x-ray masks by the combination of the dot exposure and line exposure methods in 100 kV electron beam writing.
Journal ArticleDOI
Naoshi Sugiyama1
TL;DR: In this article, the correction of the beam distortion and the proximity effect in electron-beam lithography is discussed from the viewpoint of computer processing, and the least square method is used to estimate the beam-deflection-distortion mapping function.
Abstract: The corrections on the beam distortion and proximity effect in the electron-beam lithography are discussed from the viewpoint of computer processing. The coefficient parameters of the beam-deflection-distortion mapping function are estimated by the least square method from the measurement data of the beam deflection distortion, and the error distribution is clarified. The measurement errors in the movement and rotation of the sample desk are minimized. For the proximity effect correction at the rectangular beam illumination, the illumination intensity distribution function is approximated to the trapezoidal form and the computer simulation is made for the calculation of the exposure dose. Finally, the dependences of the beam scanning direction and the scanning interval on the proximity effect are examined by computer simulation.
Journal ArticleDOI
01 Sep 1992
TL;DR: In this article, a production process based on optical lithography is adapted to fabricate submicron sized interdigitated microwave transistors, the emitter, base contact, and metallization patterns are defined by direct write electron beam lithography.
Abstract: To study the effects of reducing the lateral dimensions of bipolar transistors to values below 1 ?m, a production process based on optical lithography, is adapted to fabricate submicron sized interdigitated microwave transistors. The emitter, base contact, and metallization patterns are defined by direct write electron beam lithography. For alignment of the patterns, special registration marks on (111) Si-wafers, compatible with further silicon processing have been developed. With a Philips EBPG/03 Beamwriter the resulting overlay accuracy is between 50 and 100 nm. The emitter and base contact resist patterns are transferred to a SiO 2 layer by reactive ion etching. The exposure dose latitude for the definition of the Ti/Pt/Au metallization pattern is severely limited by the proximity effect and a high contrast electron beam resist is needed. To tansfer by sputter etching, the resist pattern into a high quality submicron metallization pattern, Ti is used as an etch mask.
Journal ArticleDOI
TL;DR: Efficient distributed implementations of grayscale proximity effect correction on a temporally heterogeneous cluster are described with the main emphasis on static and dynamic load balancing schemes and their optimization through effective task partitioning methods.
Abstract: Grayscale electron-beam lithography is a technique widely used in transferring three-dimensional structures onto the resist layer or substrate. The proximity effect caused by electron scattering in the resist imposes a severe limitation on the ultimate spatial resolution attainable by e-beam lithography. Therefore, correction of the proximity effect is essential particularly for the fine-feature, high-density circuit patterns. However, the proximity effect correction is very time-consuming due to the intensive computation required in the correction procedure and a large size of circuit data to be processed. Hence, it is an ideal candidate for distributed computing where the otherwise-unused CPU cycles of a number of computers on a network (cluster) can be efficiently utilized. One of the characteristics of such a cluster is its heterogeneity, i.e., the available computing power varies with computer and/or time. This variation may degrade the performance of distributed computing significantly. In this paper, efficient distributed implementations of grayscale proximity effect correction on a temporally heterogeneous cluster are described with the main emphasis on static and dynamic load balancing schemes and their optimization through effective task partitioning methods. The experimental results obtained on a cluster of Sun workstations shared by multiple users are presented with detailed discussion.

Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202316
202234
20214
20206
20194
20186