Proximity effect (electron beam lithography)

About: Proximity effect (electron beam lithography) is a research topic. Over the lifetime, 940 publications have been published within this topic receiving 8508 citations.

Homointerface planar Josephson junction based on inverse proximity effect

Abstract: The quality of a superconductor-normal metal-superconductor Josephson junction (JJ) depends crucially on the transparency of the superconductor-normal metal (S/N) interface. We demonstrate a technique for fabricating planar JJs with perfect S/N interfaces. The technique utilizes a strong inverse proximity effect discovered in Al/V$_5$S$_8$ bilayers, by which the Al layer is driven into the resistive state. The highly transparent S/N homointerface and the peculiar normal metal enable the flow of Josephson supercurrent across a 2.9 $\mu$m long weak link. Moreover, our JJ exhibits a giant critical current and a large product of the critical current and the normal state resistance.

Charged particle beam drawing device and charged particle beam drawing method

Abstract: PROBLEM TO BE SOLVED: To correct dimension fluctuations due to developing loading effect and etching loading effect while correcting proximity effect.SOLUTION: A drawing device 100 includes a storage device 142 inputting and storing a plurality of pattern dimension map data of different proximity effect densities, a selecting portion 10 selecting a group of a proximity effect correction coefficient where a dimension error of a pattern dimension in partial proximity effect density is corrected and the correction remainder occurs in the dimension error of the pattern dimension in remaining proximity effect density, and a reference irradiation amount when a map position is drawn by an irradiation amount obtained by an irradiation amount function at every map position, a correction term operating portion 16 operating a correction term for correcting correction remainder depending on the proximity effect density at every map position, an irradiation amount operating portion 18 operating the irradiation amount by using the selected group and the correction term at every map position and a drawing portion 150 drawing a desired pattern on a substrate by using electron beams of the obtained irradiation amount.

Pattern measurement method and inspection method of photomask

Abstract: PROBLEM TO BE SOLVED: To provide a pattern measurement method to obtain a pattern having less errors by inserting a pattern which corrects a proximity effect of a photomask into a region except for monitor or circuit patterns conventionally designated by users upon ensuring dimensions of a photomask, and by inspecting the pattern and controlling drawing conditions after drawing. SOLUTION: In the pattern measurement method to correct a pattern formed on a photomask, a dimension controlling pattern 10 that includes a pattern region 11 having the pattern 13 as an object of measurement and an occupancy rate varied region 12 comprising a pattern with a varied occupancy rate around the above pattern region, is simultaneously formed in the photomask; and the dimension of the pattern 13 as the measurement object of the photomask is measured so as to evaluate whether the photomask can be used. In particular, the pattern dimension is evaluated by using two or more kinds of patterns to suppress variance in the proximity effect in an electron beam (EB) drawing device while checking the size of the proximity effect. COPYRIGHT: (C)2008,JPO&INPIT

Discriminating submicron lithography process variations with a white light confocal scanning optical microscope

Abstract: Proximity effects of a 0.80 micron litho process are investigated with an aim to quantitatively evaluate them over typical litho Focus-Exposure Process variations. Process changes considered here are: (1) + /- 1.0 micron focus window, centered at stepper "best" focus; (2) + /- 7.5% exposure window, centered at the nominal exposure energy to print equal 0.80 micron L/S in a 1.16 micron thick resist. The one-dimensional proximity effect-"linewidth" variations are characterized with a Real-Time White Light Confocal Scanning Optical Microscope (RSOM) because of its excellent depth and transverse resolution. The surface width of the resist was determined to be most indicative of the complex interaction between Focus-Exposure and Proximity effects upon resist profile and its subsequent width and so this surface was chosen as the site for the relative effect determination. For measurements, geometrical patterns with high sensitivity to the F-E-Proximity interaction were selected. These patterns follow SEMI defined standard test structures for consistent Litho-Metrology Process evaluation and Metrology Instruments testing. The experimental data demonstrate the RSOM's high capability to discriminate resist pattern top surface proximity effects in the 0.025 to 0.050 micron range caused by process variations.

Method for optical proximity effect correction, design and production of reticle using variable shaped beam lithography, design and production

Abstract: PROBLEM TO BE SOLVED: To provide a method of using a variable shaped beam (VSB) for forming an intended pattern on a surface which is advantageous in reducing time and costs in a charged particle beam drawing system.SOLUTION: A cluster of a plurality of VSB shots deviates from an intended pattern. VSB shots are made to be mutually superposable, and the dose of shots is changeable. A similar method is applied to optical proximity effect correction, fracturing, mask data preparation and proximity effect (OPC) correction. To create glyphs, a pattern to be formed on a surface by one VSB shot or group of VSB shots is calculated preliminarily. An optimization technique can be used to minimize the number of shots. The method is used in e.g. a process of producing integrated circuits by optical lithography using a reticle or a process of producing integrated circuits by direct drawing.