Topic
Proximity effect (electron beam lithography)
About: Proximity effect (electron beam lithography) is a research topic. Over the lifetime, 940 publications have been published within this topic receiving 8508 citations.
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01 Jan 1978
Patent•
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27 Aug 1987
TL;DR: In this paper, the authors proposed to decrease proximity effect without deteriorating performance in an electron-optical system to enable a pattern to become fine with high precision, by forming a resist film through an incident electron-interrupting film, which is made of heavy metal or material containing heavy metal, on a pattern-formed plane.
Abstract: PURPOSE:To decrease proximity effect without deteriorating performance in an electron-optical system to enable a pattern to become fine with high precision, by forming a resist film through an incident electron-interrupting film, which is made of heavy metal or material containing heavy metal, on a pattern- formed plane. CONSTITUTION:A silicon oxidizing film 2 is formed on the surface of a silicon substrate 1 or on a surface. An incident electron-interrupting film such as a tungsten film 3, made of heavy metal or material containing heavy metal, is formed thereon. Then, a resist film for electron beams such as a negative-type silicon-containing resist film 4. is formed thereon by coating. Then, when a pattern is pictured on the silicon-containing resist film 4 to be developed using prescribed developing solution, the pattern 4' of the silicon-containing resist film is formed with highly precise patterning. Replacing a base material of the resist film by tungsten enables mutual interaction between neighboring exposure patterns to be sufficiently reduced to widely decrease proximity effect. Then, the tungsten film is selectively removed, with the silicon-containing resist film pattern 4' serving as mask, to obtain a part 3' which is covered with the silicon-containing resist film pattern 4'.
29 Apr 2010
TL;DR: In this paper, a rigorous e-beam lithography simulator for the feature scale has been developed, where the patterning behavior is determined by modeling electron scattering, exposure, and resist processing inside the film stack, with corresponding simulation capabilities for the optical and EUV case.
Abstract: With the constantly improving maturity of e-beam direct write exposure tools and processes for applications in high volume
manufacturing, new challenges with regard to speed, throughput, correction and verification have to be faced. One objective
of the MAGIC high-throughput maskless lithography project [1] is the application of the physics-based simulation in a
virtual e-beam direct write environment to investigate proximity effects and develop comprehensive correction
methodologies [2]. To support this, a rigorous e-beam lithography simulator for the feature scale has been developed [3]. The
patterning behavior is determined by modeling electron scattering, exposure, and resist processing inside the film stack, in
analogy with corresponding simulation capabilities for the optical and EUV case. Some model parameters, in particular for
the resist modeling cannot be derived from first principles or direct measurements but need to be determined through a
calibration process.
To gain experience with the calibration of chemically amplified resists (CAR) for e-beam lithography, test pattern exposures
have been performed for a negative tone CAR using a variable-shaped beam writer operating at 50kV. A recently
implemented model calibration methodology has been applied to determine the optimum set of resist model parameters.
While the calibration is based on 1D (lines & spaces) patterns only, the model results are compared to 2D test structures for
verification.
01 Jan 2001
TL;DR: The current-controlled scanning probe lithography (SPLPL) system as mentioned in this paper can reliably pattern uniform features in organic resists with dimensions below 100 nm, and it has been shown that it is more efficient than EBL.
Abstract: The current-controlled scanning probe lithography (SPL) systems that we developed (described in Chapter 3) can reliably pattern uniform features in organic resists with dimensions below 100 nm. In this chapter, we compare electron exposures made by SPL to those made by electron beam lithography (EBL). This comparison highlights the advantages and limitations of a low-energy electron lithography technique such as SPL.
CERN1
TL;DR: In this article , the Ginzburg-Landau equations were used to confirm the results of superconducting rf accelerating cavities with non-constant Q-value, and the role of temperature, the result of nitrogen doping and its relation to the free path, and influence of the static external magnetic field.
Abstract: Small (compared to coherence length) weak superconducting defects when located at the surface, combined with the proximity and percolation effects, are claimed responsible for various observations with superconducting rf accelerating cavities with non-constant Q-value, such as "Q-slope" and "Q-drop", the role of temperature, the result of "nitrogen doping" and its relation to the free path, and the influence of the static external magnetic field. The Ginzburg-Landau equations are used to confirm the results.