Topic
Proximity effect (electron beam lithography)
About: Proximity effect (electron beam lithography) is a research topic. Over the lifetime, 940 publications have been published within this topic receiving 8508 citations.
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TL;DR: In this article, the authors proposed iridium diffraction gratings at double the line spacing of the original HSQ lines, achieving a new record resolution in photolithography, achieving 6-nm half-pitch line/space patterns.
Abstract: Extreme ultraviolet interference lithography records the interference pattern of two diffracted, coherent light beams, where the pattern resolution is half the diffraction grating resolution. The fabrication of diffraction grating masks by e-beam lithography is restricted by the electron proximity effect and pattern transfer limitations into diffraction efficient materials. By patterning HSQ lines at a relaxed pitch to avoid the electron proximity effect, depositing conformal iridium via atomic layer deposition, followed by ion milling the top and bottom iridium and HSQ removal, we fabricated iridium diffraction gratings at double the line spacing of the original HSQ lines. Line/space patterns of 6-nm half-pitch patterns were achieved using these masks, marking a new record resolution in photolithography.
20 citations
Patent•
27 Mar 1992TL;DR: In this article, the number of repeated unit patterns included in an aperture plate with an aperture including an array of unit patterns and an ordinary aperture of a rectangular shape is determined by considering the repeated unit pattern array to be delineated.
Abstract: An electron beam lithography apparatus is disclosed which has an aperture plate provided with an aperture including an array of repeated unit patterns and an ordinary aperture of a rectangular shape. A region free of the influence of a proximity effect is delineated using the former aperture, and a region affected by the proximity effect is delineated using the latter aperture. The number of repeated unit patterns included in the former aperture is determined considering the number of repeated unit patterns included in a pattern array to be delineated on a substrate. Thereby, the number of electron beam shots is reduced. A plurality of apertures having slightly different aperture widths may be provided for always keeping a pattern line width constant.
19 citations
TL;DR: In this paper, a lower energy e-beam was found to be more effective in deoxygenating of GO than that by using a higher energy E-beam, and the thickness and the oxygen-to-carbon atomic ratio of the pattern are strongly related that decreases progressively with increasing the electron dosage before reaching a steady level.
19 citations
Patent•
IBM1
TL;DR: In this paper, a multi-layered resist structure and methods of producing them which can be used in electronic device lithography to produce micrometer and submicrometer geometries are described.
Abstract: The present invention discloses multi-layered resist structures and methods of producing them which can be used in electronic device lithography to produce micrometer and submicrometer geometries. The resist structure comprises two or more layers at least one of which is a metallic material and at least one of which is a radiation-sensitive material. The metallic layer exhibits both a high atomic number and a high density. The metallic material is positioned relative to the radiation-sensitive polymeric material so that it can be used to control reflection and backscatter of radiation used to create a latent image within the radiation-sensitive polymeric material. The thickness of the metallic layer is determined by the amount of reflection desired and the amount of backscatter permitted into the layer of radiation-sensitive polymeric material.
19 citations
TL;DR: In this article, small angle X-ray scattering (SAXS) was used to characterize the cross section of nanoline gratings fabricated with electron beam lithography (EBL) patterning followed by anisotropic wet etching into a single crystal silicon substrate.
19 citations