Topic
Proximity effect (electron beam lithography)
About: Proximity effect (electron beam lithography) is a research topic. Over the lifetime, 940 publications have been published within this topic receiving 8508 citations.
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TL;DR: In this paper, the authors compared the two approaches in terms of CD error (edge placement error) and edge contrast, using the two corresponding versions of PYRAMID, and a hybrid approach, i.e., combination of dose and shape modifications, is also considered.
Abstract: As the dimensions of circuit primitives are reduced, the proximity effect becomes an increasingly important limiting factor in the fabrication of high density integrated circuits using electron beam (e-beam) lithography. In the past, proximity effect correction schemes have in general utilized one of two different approaches: dose or shape modification. Previously, PYRAMID, a hierarchical, rule-based proximity effect correction scheme which has been demonstrated to be able to correct circuit patterns with a minimum feature size of 0.1 μm was successfully presented. Although PYRAMID has been implemented with a pattern shape modification technique, its correction algorithms are not limited to this approach. In this article, the two approaches are compared in details in terms of CD error (edge placement error) and edge contrast, using the two corresponding versions of PYRAMID. A hybrid approach, i.e., combination of dose and shape modifications, is also considered.
19 citations
Patent•
12 Jul 2006
TL;DR: In this paper, a drawing method and a device for drawing with the amount of beam irradiation for executing highly accurate compensation for variation of dimension was provided. But, the drawing method was not suitable for high dimensional drawings.
Abstract: PROBLEM TO BE SOLVED: To provide a drawing method and a device for drawing with the amount of beam irradiation for executing highly accurate compensation for variation of dimension. SOLUTION: This method of charged particle beam lithography comprises a calculation process for the amount of irradiation for proximity effect correcting (S504), a calculation process for the amount of irradiation for residual correcting for proximity effect correcting (S102), and an irradiation process (S516) for irradiating a sample with a charged particle beam with the amount of irradiation provided by correcting the corrected amount of irradiation such as the amount of irradiation for proximity effect correcting, by using the amount of irradiation for residual correcting for proximity effect correcting. By this invention, the correcting residual can be reduced. COPYRIGHT: (C)2008,JPO&INPIT
19 citations
TL;DR: In this paper, the NERIME (negative resist image by dry etching) process combines these advantages due to the incorporation of focused Ga ion beam (Ga FIB) exposure, near UV exposure, silylation and dry development process steps.
19 citations
29 Apr 2010
TL;DR: In this paper, the authors show that the absorbed energy inside the resist caused by backscattered electrons from these films is non-negligible, about 1/10 of the forward scattering electrons and 1/4 of the backscattering electrons from the substrate.
Abstract: Electron backscattering from Extreme Ultraviolet (EUV) masks during Electron Beam (EB) exposure was studied by simulations and experiments. The film structure of EUV masks is quite different from that of photomasks. The Mo/Si multilayer on the EUV substrate is very thick (280 nm) and heavy metal material such as Ta is used for the absorber. Monte Carlo simulations suggest that the absorbed energy inside the resist caused by the backscattered electrons from these films is non-negligible, about 1/10 of the forward scattering electrons and 1/4 of the backscattered electrons from the substrate. Also the simulations show that the influence range is very short because the backscattering happens near the mask surface. These simulations were verified by conducting EB exposure experiments. Short-range proximity effect was clearly observed by measuring the resist Critical Dimentions (CDs) of short bars laid beside the large exposed area. The data were fitted by assuming a backscattering electron distribution which has an exponential form with 0.4 μm range. The range is very short compared with the conventional proximity range of 10 μm. We conclude that the conventional EB proximity effect correction method needs to be revisited for EUV masks.
19 citations
TL;DR: In this article , the authors demonstrate that a moiré pattern between a van der Waals superconductor and a monolayer ferromagnet creates a periodic potential modulation that enables the realization of a topological superconducting state that would not be accessible in the absence of the Moiré.
Abstract: The search for artificial topological superconductivity has been limited by the stringent conditions required for its emergence. As exemplified by the recent discoveries of various correlated electronic states in twisted van der Waals materials, moiré patterns can act as a powerful knob to create artificial electronic structures. Here, we demonstrate that a moiré pattern between a van der Waals superconductor and a monolayer ferromagnet creates a periodic potential modulation that enables the realization of a topological superconducting state that would not be accessible in the absence of the moiré. The magnetic moiré pattern gives rise to Yu-Shiba-Rusinov minibands and periodic modulation of the Majorana edge modes that we detect using low-temperature scanning tunneling microscopy (STM) and spectroscopy (STS). Moiré patterns and, more broadly, periodic potential modulations are powerful tools to overcome the conventional constraints for realizing and controlling topological superconductivity.
19 citations