Topic
Proximity effect (electron beam lithography)
About: Proximity effect (electron beam lithography) is a research topic. Over the lifetime, 940 publications have been published within this topic receiving 8508 citations.
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IBM1
TL;DR: In this article, a method of partitioning design shapes into subshapes such that a constant dose may be applied to an E-beam sensitive resist within each subshape was proposed.
Abstract: A method of partitioning design shapes, in an E-beam lithography system, into subshapes such that a constant dose may be applied to an E-beam sensitive resist within each subshape. Within each subshape the constant dose corresponds to an approximation to an indicator function, indicative of the degree of the proximity effect, such as the effective exposure of the resist from backscattered electrons or the required dose. The error of the approximation is equal to a predetermined value for each subshape, and can depend upon the position of the subshape within the shape and the influence of errors in the applied dose at that position on the position, on development, of the edge of the shape.
18 citations
TL;DR: In this article, a stable helium FI source and a focusing column with a gimbal assembly for beam axis alignment were developed and carried out focusing experiments, and the ion probe diameter was estimated to be ∼200 nm.
Abstract: Despite the many reports on characteristics of hydrogen field ion (FI) sources, there have been only a few reports on focusing experiments We developed a stable helium FI source and a focusing column with a gimbal assembly for beam axis alignment, and carried out focusing experiments Scanning ion microscope images of a Au wire were observed using the focusing column From the image resolution, the ion probe diameter was estimated to be ∼200 nm We exposed a 260‐nm‐thick polymethylmethacrylate resist on a Si substrate, which produced 200‐nm‐wide lines A 70‐nm‐wide space was also formed The proximity effect was negligible even if the space between the lines was 100 nm Thus, we confirmed that a helium FI source is suitable for fine pattern lithography
18 citations
TL;DR: In this article, a feasibility test for a new 3D PEC approach, using Layout BEAMER e-beam lithography software, was conducted using 3D zone plates and 3D holograms.
18 citations
01 Dec 2005
TL;DR: In this paper, the proximity effect in electron beam induced deposition was studied, and the beam scan sequence which minimizes the effect was suggested, which is a versatile technique to fabricate nano-structure.
Abstract: Beam induced deposition is versatile technique to fabricate nano-structure. In this paper, the proximity effect in electron beam induced deposition was studied, and the beam scan sequence which minimizes the effect was suggested.
18 citations
TL;DR: In this paper, the advantage of high voltage electron beam lithography in submicron VLSI fabrication is outlined, and the authors show that EB systems with small deflection width are suited to high voltage EB machines.
18 citations