Proximity effect (electron beam lithography)

About: Proximity effect (electron beam lithography) is a research topic. Over the lifetime, 940 publications have been published within this topic receiving 8508 citations.

Determination of proximity effect parameters in electron‐beam lithography

Abstract: A new empirical method for determining proximity parameters in electron‐beam lithography is introduced on the assumption that the proximity function is composed of two Gaussians. This method is based on the clearance of resist after development in the nonexposed square region surrounded by the latticed exposed one. Since there are many identical patterns arranged two dimensionally, statistically averaged data of proximity parameters is obtained without undertaking scanning electron microscopy for linewidth measurements. Theoretical considerations are combined with the experimental observations in order to calculate proximity parameters by the use of the design pattern.

Method and apparatus for exposure as well as manufacture of device

Abstract: PROBLEM TO BE SOLVED: To improve an obtained pattern in the multiple exposure operation of a pattern compring a periodic structure and an ordinary exposure pattern by forming a region in which the correction of a pattern strain due to an optical proximity effect of a second pattern is executed to a first pattern comprising a periodic structure used to resolve a fine line. SOLUTION: A region in which the correction of a pattern strain due to an optical proximity effect in the exposure operation of a second pattern is executed to a first pattern comprising a periodic pattern used to resolve a fine line is formed. That is to say, a periodic pattern region which is overlapped with the fine line in a direction at right angles to a period is shielded by Cr so as to become an isolated line for a light shielding operation. When a periodic pattern in which the isolated line is made thick is used, the line width of a pattern comprising the periodic structure is made equal to the line width of the isolated line. The line width of the isolated line is changed by the line width of a fine line which is to be created finally. When the isolated line is plated in the region of the periodic pattern overlapped with the fine line, the line width of the isolated line is made a little thickner than the line width of the fine line, and an optical proximity effect is corrected. COPYRIGHT: (C)2000,JPO

Charged particle beam lithography apparatus and method

Abstract: PROBLEM TO BE SOLVED: To provide a drawing apparatus for efficiently calculating pattern area density and proximity effect compensation. SOLUTION: A lithography apparatus 100 includes a block area dividing section 122 for dividing a lithography area into a plurality of first block areas in different sizes to provide the almost equal number of shots, an area density calculating section 126 for calculating each internal pattern area density in each first block area, a second block area dividing section 128 to newly divide the lithography area into a plurality of second block areas, a proximity effect correction calculating section 134 to calculate amount of radiation of light for each internal proximity effect correction using pattern area density in each second block area, a radiation amount calculating section 134 to calculate amount of radiation beam using amount of radiation of light for proximity effect correction, and a lithography section 150 for implementing lithography in the calculated amount of radiation of beam. Thus, fluctuation in calculating time periods among blocks can be eliminated. COPYRIGHT: (C)2009,JPO&INPIT

100 kV thermal field emission electron beam lithography tool for high‐resolution x‐ray mask patterning

Abstract: High‐voltage (≥50 kV) electron beam lithography (EBL) is the preferred technique for fabrication of additive‐process x‐ray masks, because the high‐voltage minimizes scattering in the resist and membrane, resulting in better resolution, straighter sidewalls, and reduced proximity effect. We have designed and built a new 100 kV column for a vector scan EBL machine for the purpose of writing high‐resolution, high‐precision x‐ray masks in order to explore the technological and fundamental limits of x‐ray lithography. The column features a 100 kV thermal field emission gun with an electrostatic condenser lens, conjugate blanking, and a liquid‐cooled magnetic final lens with high‐precision double magnetic deflection. The two‐lens optics provides a beam diameter of 30 nm at a current of 5 nA, sufficient to expose moderately sensitive resists at pixel rates approaching the maximum deflection speed of 10 MHz. Results obtained include proximity corrected, complex patterns in thin resist with feature sizes down to 50 nm. Comparisons of proximity effects, exposure parameters, and actual resist profiles, show that 100 kV is clearly superior to 50 kV and even 75 kV for feature sizes below 0.25 μm in thick (0.75 μm) resist. Excellent linewidth control has been obtained on plated gold x‐ray masks with feature sizes as small as 75 nm. Problems of patterning nanometer features with aspect ratios as high as 10:1, which include forward scattering, development effects, and plating effects, are discussed.

Charged particle beam lithography system, lithography method using charged particle beam, method of controlling charged particle beam, and method of manufacturing semiconductor device

Abstract: A charged particle beam lithography system includes a charged particle beam emitter which emits a charged particle beam to a wafer at an acceleration voltage lower than a voltage causing a proximity effect; an illumination optical system which adjusts a beam radius of the charged beam; a cell aperture having a cell pattern corresponding to a desired pattern to be written; a first deflector which deflects the charged particle beam with a first electric field to enter a desired cell pattern of the cell aperture; a demagnification projection optical system which demagnifies the charged particle beam form the cell aperture with a second electric field to form an image on the wafer; and a second deflector which deflects the charged particle beam from the cell aperture with a third electric field to adjust an irradiation position of the charged particle beam on the wafer.