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Proximity effect (electron beam lithography)

About: Proximity effect (electron beam lithography) is a research topic. Over the lifetime, 940 publications have been published within this topic receiving 8508 citations.


Papers
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Proceedings ArticleDOI
05 Jun 1998
TL;DR: In this article, a fast simulator for electron beam lithography called SELID is presented, where an analytical solution based on the Boltzmann transport equation is used instead of Monte Carlo.
Abstract: A fast simulator for electron beam lithography called SELID, is presented. For the exposure part, an analytical solution based on the Boltzmann transport equation is used instead of Monte Carlo. This method has been proved much faster than Monte Carlo. All important phenomena are included in the calculation. Additionally, the reaction/diffusion effects occurring during post exposure bake in the case of chemically amplified resists are taken into account. The result obtained by the simulation are compared successfully with experimental and other simulation results for conventional and chemically amplified resists. The case of substrates consisting of more than one layer is considered in depth as being of great importance in electron beam patterning. By using SELID, it is possible to forecast the resist profile with considerable accuracy for a wide range of resists, substrates and energies. Additionally, proximity effect parameters are extracted easily for use in any proximity correction package.

7 citations

Journal ArticleDOI
TL;DR: In this article, TQV, which is a varnish consisting of 7, 7, 8, 8-tetracyano quino dimethane complex salt, has been coated on the top layer of a trilayer resist system.
Abstract: Electron beam direct writing technologies for 0.3-µm devices are studied in this paper. In order to prevent charging effects, TQV, which is a varnish consisting of 7, 7, 8, 8-tetracyano quino dimethane complex salt, has been coated on the top layer of a trilayer resist system. The effectiveness of TQV coating is indicated by the experimental results obtained from test patterns. A proximity effect correction system with several strategies to reduce the correction time and output data volume has been developed. These technologies have been adopted for the fabrication of ULSI circuit patterns with the dimension of about 0.3 µm. The calculation time and the output data volume of a proximity effect correction are reduced considerably by using new methods. It is revealed that 0.3-µm ULSI patterns can be precisely fabricated by these new technologies.

7 citations

Journal ArticleDOI
TL;DR: In this paper, a simple experimental method was developed to extract parameters of α, β and η for proximity correction in electron beam lithography of chemically amplified resists, based on the measurement of a series of isolated lines with different line widths exposed at a single exposure dose.

7 citations

Patent
Nakajima Ken1
17 Mar 1997
TL;DR: In this paper, an electron beam lithography system radiates a beam uniform in beam current density through apertures formed in an aperture plate to an electron resist layer, and steps are formed in the outlet end portions of the aperture so as to decrease the beam current densities of a peripheral portion of the incident electron beam, thereby preventing the resist layer from the proximity effect.
Abstract: An electron beam lithography system radiates an electron beam uniform in beam current density through apertures formed in an aperture plate to an electron resist layer, and steps are formed in the outlet end portions of the apertures so as to decrease the beam current density of a peripheral portion of the incident electron beam, thereby preventing the electron resist layer from the proximity effect.

7 citations

Journal ArticleDOI
Masato Saito1, Kunihiro Ugajin1, Keisuke Yagawa1, Machiko Suenaga1, Yoshihito Kobayashi1 
TL;DR: In this paper, the performance of conventional mask fabricating process was examined and the impact of proximity effect to the resist performance was examined, showing that resist damage induced by proximity effect degrades the resolution limit about 2nm.
Abstract: To investigate the possibility to catch up the NGL mask pattern size scaling strategy which indicated in ITRS2012, the performance of conventional mask fabricating process was examined. Current EB resist used for mask fabrication doesn’t have enough performance to resolve below hp20nm pattern. With newly developed CAR resist, the resolution limit reached to hp18nm pattern. Furthermore by using higher performance EB writer, the possibility to resolve up to hp16nm pattern was showed. The impact of proximity effect to the resist performance was examined. The resist damage induced by proximity effect degrades the resolution limit about 2nm. This is a serious problem for NGL mask manufacturing. Reducing the impact of proximity effect is one of the major challenges for developing higher resolution EB resist.

7 citations


Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202316
202234
20214
20206
20194
20186