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Proximity effect (electron beam lithography)

About: Proximity effect (electron beam lithography) is a research topic. Over the lifetime, 940 publications have been published within this topic receiving 8508 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, the simulation of isolated trench patterning has been performed using the Monte Carlo simulation software SELID™, and various key process parameters, including beam energy, exposure dose, substrate, acid diffusion length, and development time have been analyzed by means of the point-spread function, secondary electron distribution, energy distributions, and developed resist profiles.
Abstract: To better understand the proximity effect of electron-beam lithography and its limitation on aspect ratios in a thick resist film (>1.0μm), the simulation of isolated trench patterning has been performed using the Monte Carlo simulation software SELID™. Various key process parameters, including beam energy, exposure dose, substrate, acid diffusion length, and development time have been analyzed by means of the point-spread function, secondary electron distribution, energy distributions, and developed resist profiles. Exposure dose and development time are optimized to achieve vertical sidewalls, and the acid diffusion length has been adjusted to slightly change the top and bottom dimensions of the patterned trench. The simulation results show that increasing the beam energy significantly reduces the forward proximity effect and thereby increases the trench aspect ratio. In contrast, the substrate generally has only a minor effect in terms of the resist profile because its backscattering effect covers a lo...

42 citations

Patent
Han Woo-Sung1, Chang-jin Sohn1
16 Apr 1996
TL;DR: In this article, a photo mask is used to increase the capacitance of a capacitor by improving the proximity effect of a mask pattern, which is suppressed by forming an optical transmittance control film pattern in the transmission area between the individual portions of the mask pattern.
Abstract: A photo mask and method for manufacturing the same increase the capacitance of a capacitor by improving the proximity effect of a mask pattern. The photo mask includes a transparent substrate, an opaque mask pattern for defining an optical transmission area on the substrate, and an optical transmittance control film pattern for suppressing proximity effect in the optical transmission area. The proximity effect is suppressed by forming an optical transmittance control film pattern in the transmission area between the individual portions of the opaque mask pattern, so that the mask pattern shape can be exactly transferred onto a substrate.

42 citations

Journal ArticleDOI
TL;DR: In this article, a focused megaelectronvolt (MeV) proton beam writing of poly-(methyl methacrylate) positive resist combined with metal lift-off was used to achieve a few nanometres gap.
Abstract: Metal electrode structures for biosensors with a high spatial density and similar to85 nm gaps have been produced using focused megaelectronvolt (MeV) proton beam writing of poly-(methyl methacrylate) positive resist combined with metal lift-off. The minimal proximity exposure and straight proton trajectories in (similar to100 nm) resist layers for focused MeV proton beam writing are strongly indicative that ultimate electrode gap widths approaching a few nanometres are achievable.

41 citations

Journal ArticleDOI
TL;DR: This Letter presents a single-exposure deep-UV projection lithography at 254-nm wavelength that produces nanopatterns in a scalable area with a feature size of 80 nm and characterize the lithography performance in terms of the proximity effect, lens aberration, and interference effect due to refractive index mismatch between photoresist and substrate.
Abstract: In this Letter, we present a single-exposure deep-UV projection lithography at 254-nm wavelength that produces nanopatterns in a scalable area with a feature size of 80 nm. In this method, a macroscopic lens projects a pixelated optical mask on a monolayer of hexagonally arranged microspheres that reside on the Fourier plane and image the mask's pattern into a photoresist film. Our macroscopic lens shrinks the size of the mask by providing an imaging magnification of ∼1.86×10(4), while enhancing the exposure power. On the other hand, microsphere lens produces a sub-diffraction limit focal point-a so-called photonic nanojet-based on the near-surface focusing effect, which ensures an excellent patterning accuracy against the presence of surface roughness. Ray-optics simulation is utilized to design the bulk optics part of the lithography system, while a wave-optics simulation is implemented to simulate the optical properties of the exposed regions beneath the microspheres. We characterize the lithography performance in terms of the proximity effect, lens aberration, and interference effect due to refractive index mismatch between photoresist and substrate.

40 citations

Journal ArticleDOI
TL;DR: In this article, the authors measured the range and intensity of backscattered exposure from a silicon substrate as a function of incident electron energy and showed that the severity of the proximity effect, the exposure of regions not addressed by the beam, can be reduced by using high beam energy.
Abstract: The range and intensity of backscattered exposure from a silicon substrate were measured as a function of incident electron energy The range is proportional to the energy to the 17 power The integrated energy deposited at the silicon surface by backscattered electrons is about 08 of the energy deposited by the incident electrons and is nearly independent of the incident beam electron energy These results show that the severity of the proximity effect, the exposure of regions not addressed by the beam, can be reduced by using high beam energy since the backscattered electrons are spread over a distance much larger than minimum feature sizes

40 citations


Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202316
202234
20214
20206
20194
20186