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Proximity effect (electron beam lithography)

About: Proximity effect (electron beam lithography) is a research topic. Over the lifetime, 940 publications have been published within this topic receiving 8508 citations.


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Patent
03 Jul 2008
TL;DR: In this article, a method of correcting a mask pattern is proposed to correct the mask pattern with high accuracy so that the wiring pattern having the desired dimensions is formed on the substrate, thereby dealing with the etching proximity effect.
Abstract: A method of correcting a mask pattern, the method correcting the mask pattern of a mask such that a wiring pattern having desired dimensions is formed based on a micro-fabrication process using the mask, corrects the mask pattern so that, before carrying out the micro-fabrication process, an etching proximity effect is dealt with by use of the correction model in which a pattern size and a inter-patter space size are set as parameters. This makes it possible to correct the mask pattern with high accuracy so that the wiring pattern having the desired dimensions is formed on the substrate, thereby dealing with the etching proximity effect.

5 citations

Proceedings ArticleDOI
31 Jul 2002
TL;DR: A new pattern correction method for reducing pattern critical dimension (CD) errors due to a variety of pattern layouts and densities was introduced for correcting CD errors that occur during a dry etching process.
Abstract: We have investigated a new pattern correction method for reducing pattern critical dimension (CD) errors due to a variety of pattern layouts and densities. Together with conventional proximity effect correction and fogging functions in an electron beam (EB) writing process, the new pattern correction was introduced for correcting CD errors that occur during a dry etching process. A rule-based OPC software was used to modify EB pattern shapes. In addition to the spaces between neighboring patterns, the surrounding pattern density was chosen as a correction parameter. First, we optimized the pattern correction table by measuring the CDs of various symmetric 3 lines with 5 levels of surrounding pattern densities. Next, we applied the pattern correction to semi real device patterns. From the measurement for 100 patterns of them, CD uniformity of 15.0 nm (3-sigma) was obtained. We confirmed the effectiveness of the pattern correction method.

5 citations

Journal Article
G.J. Dolan1, T.A. Fulton
TL;DR: In this article, a simple resist structure for implementing brushfire lithography (BFL) in electron-beam writing is described. And the outlines of the pattern features are written as narrow deep openings formed in a single layer of positive electron resist.
Abstract: We describe a simple resist structure for implementing brushfire lithography (BFL) in electron-beam writing. The outlines of the pattern features are written as narrow deep openings formed in a single layer of positive electron resist. An oblique evaporation of a metal film onto the surface yields outlined electrically isolated metal copies of the features. These can be toned by selective electrically controlled etching. Transfer of the metal pattern to the underlying resist completes the structure.

5 citations

Patent
26 Apr 1990
TL;DR: In this article, the authors proposed to substantially reduce proximity effect through simple processes by including a process for carrying out the main exposure for a repetitive pattern in a predetermined region and a process to compensate the intensity of a charged particle beam through carrying out auxiliary exposure in the outer peripheral region where the pattern is ununiform.
Abstract: PURPOSE:To substantially reduce proximity effect through simple processes by including a process for carrying out the main exposure for a repetitive pattern in a predetermined region and a process for compensating the intensity of a charged particle beam through carrying out the auxiliary exposure in the outer peripheral region where the pattern is ununiform. CONSTITUTION:A basic pattern 1 is exposed repeatedly, and the main exposure is carried out in a predetermined region 2 for a repetitive pattern, and the auxiliary exposure 6, whose intensity is lower than that of the main exposure, is carried out in the outer peripheral region within the repetitive pattern region 2 except the central region 2a of the repetitive pattern region 2. Namely, the proximity effect is brought about nearly uniformly in the central part 2a of the repetitive region 2, but in the outer peripheral region 2b, there are a first and a second adjacent patterns on one side and there is no adjacent pattern on the other side so that an ununiformity is generated. Accordingly, when the auxiliary exposure 6 is carried out in the outer peripheral part 2b, the ununiformity of the exposure amount of the main exposure 3 can be compensated so that the proximity effect can be reduced in a simple way.

5 citations

Journal ArticleDOI
TL;DR: In this paper, the effect of electron beam potential on the distribution of deposited energy in the resist film is determined experimentally, and compared with Monte Carlo simulations, and the results are used to discuss the effect on the dose contrast achievable in single and double layer resist systems.
Abstract: Polymeric resists based on the O–Si–O backbone, called polysiloxanes, have the extraordinary property that they are highly sensitive to various forms of energy, and at the same time they are highly resistant to etching in an oxygen plasma. Thus, thin layers of these materials on top of thick layers of carbon based polymers can be patterned and then used as masks for plasma etching of the bottom layer. The proximity effect parameters for electron beam exposure of such a system have been reported previously by Jones, Paraszczak, and Speth. In the present paper, the thin layer of polysiloxane is used for the energy which is deposited in the top layer of the resist system. The effect of electron beam potential upon the distribution of deposited energy in the resist film is determined experimentally, and compared with Monte Carlo simulations. The results are used to discuss the effect of electron beam potential on the dose contrast achievable in single and double layer resist systems.

5 citations


Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202316
202234
20214
20206
20194
20186