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Showing papers on "Pulsed laser deposition published in 1972"


Patent
Sol Aisenberg1
12 Jul 1972
Abstract: A method and apparatus for depositing a thin film of material upon a base substrate including a glow discharge ion source for generating the particular ions that will be subsequently deposited upon the base substrate, a vacuum deposition chamber wherein the substrate material is located, and, intermediate between the glow discharge ion source and the vacuum deposition chamber, a constrictor electrode for isolating the deposition chamber from the ion chamber and an anode electrode for extracting ions from the plasma ion source and directing them toward the target substrate. A magnetic field is also provided in the apparatus of the present invention by the use of an externally wound magnetic coil to permit the glow discharge ion source to operate at a lower pressure and to constrict the flow of ions toward the substrate.

41 citations


Patent
16 Jun 1972
TL;DR: In this article, a process and apparatus for the production of carbide films at high rates by physical vapor deposition is described, where the metal is evaporated in a vacuum chamber by an electron beam, the hydrocarbon gas is introduced into the chamber, and the metal vapor atoms and gas atoms are activated by electrons deflected from the electron beam to the reaction zone by a low voltage electrode at the react zone.
Abstract: Process and apparatus for the production of carbide films at high rates by physical vapor deposition. The metal is evaporated in a vacuum chamber by an electron beam, the hydrocarbon gas is introduced into the chamber, and the metal vapor atoms and gas atoms are activated by electrons deflected from the electron beam to the reaction zone by a low voltage electrode at the reaction zone. The reaction takes place primarily in the vapor phase in the reaction zone, rather than on the substrate. A high reaction efficiency is obtained with the activated atoms and a deposition rate in the range of 1 to 12 micrometers per minute and higher is achieved.

38 citations


Patent
17 Feb 1972
TL;DR: In this article, a high desnity pulsed plasma generator is disposed in axial alignment with a high energy pulse laser to receive laser radiation from the laser axially to the movement of the plasma blob along the centterline of the center electrode of a plasma gun.
Abstract: A high desnity pulsed plasma generator is disposed in axial alignment with a high energy pulse laser to receive laser radiation from the laser axially to the movement of the plasma blob along the centterline of the center electrode of the plasma gun A high Z-material is disposed between the laser output and the plasma for evaporation by the laser and subsequent injection of heavy z-ions into the plasma for enhancing x-ray radiation from the plasma Electrrical circuit means is provided for energizing the plasma gun and the laser at predetermined times

25 citations


Journal ArticleDOI
TL;DR: In this paper, the experimental conditions for depositing VO 2 thin films with a semiconductor-to-metal phase transition are described and the influence of the film deposition parameters on the transition properties are analyzed.

23 citations


Journal ArticleDOI
TL;DR: In this article, the performance of two experimental systems for quantitative studies of thin-film nucleation and growth processes including epitaxial depositions is described, including a modified LEED-Auger with high-resolution electron microscopy.

20 citations


Patent
17 Feb 1972
Abstract: A high density pulsed plasma generator produces a high temperature plasma which is sensed by a photo switch which in turn triggers the operation of a high energy pulse laser. The frequency of the laser light is such that the plasma will absorb it. The laser is disposed in coaxial alignment with the center electrode of the plasma gun so that the high energy laser radiation illuminates the plasma blob axially to its motion with respect to the center electrode of the coaxial plasma gun.

11 citations


Patent
Suzaki Y1, Tachibana A1, Yamamoto Y1
16 Oct 1972
TL;DR: In this article, the position of the flying object and the coordinates of the unknown point are determined by detecting the times of emission and reception of the laser pulse, which is the same as in this paper.
Abstract: Pulsed laser light is emitted at a certain interval and diffused in space by a pulse laser source installed on a flying object moving relative to the ground. The diffused laser light is received on the ground at a plurality of known points whose coordinates are all known and at, at least, one unknown point whose coordinates are to be determined so that the position of the flying object and the coordinates of the unknown point are determined by detecting the times of emission and reception of the laser pulse.

11 citations


Journal ArticleDOI
TL;DR: In this paper, the feasibility of using a cw laser as the energy source for a thermal-evaporation process was evaluated using a 20W output YAG laser, uniform platinum films were successfully deposited in a stable easily controlled process.
Abstract: The fabrication of beam lead silicon integrated‐circuit devices involves the vapor deposition of platinum, which is generally accomplished by electron‐beam bombardment or by low‐voltage sputtering. In an effort to develop alternative platinum‐deposition techniques, we have evaluated the feasibility of using a cw laser as the energy source for a thermal‐evaporation process. Using a 20‐W‐output YAG laser, uniform platinum films were successfully deposited in a stable easily controlled process. Films deposited on oxidized silicon slices evidenced no space‐charge buildup in the oxide, the change in flat‐band voltage following platinum deposition being negligible. Although the evaporation rate that was obtained is but 0.2 A/min at a 6‐cm source‐to‐substrate distance, it is concluded that this is entirely a result of the limited power output of the particular laser that was used. No theoretical limitation to the utilization of a laser in vapor‐deposition processes was encountered in this study.

9 citations


Journal ArticleDOI
TL;DR: In this article, a liquid helium vapor cooled field ion microscope suitable for ultrahigh vacuum studies of vapor deposition and thin film growth is described, and features include simplicity of design and economy of operation over the full temperature range down to liquid helium temperature.
Abstract: A bakable liquid helium vapor cooled field ion microscope suitable for ultrahigh vacuum studies of vapor deposition and thin film growth is described. The features include simplicity of design and economy of operation over the full temperature range down to liquid helium temperature. Movable evaporators allow in situ studies of thin metal films formed by vapor deposition.

9 citations


Journal ArticleDOI
Yoshio Murakami1, Takao Shintani1

8 citations


01 May 1972
TL;DR: In this paper, the authors described the sputtering process in terms of its features: versatility, momentum transfer, configuration of target, precise controls and the relatively slow deposition rate of sputtered films.
Abstract: The sputtering process is described in terms of its features: versatility, momentum transfer, configuration of target, precise controls and the relatively slow deposition rate. Sputtered films are evaluated in terms of adherence, coherence, and internal stresses. The strong adherence is attributed to the high kinetic energies of the sputtered material, sputter etched (cleaned) surface, and the submicroscopic particle size. An illustration is a sputtered solid film lubricant such as MoS2. Friction tests were conducted on a thin, 2000 A deg thick MoS2 film. These films are very dense and without observable pinholes, and the particle to particle cohesion is strong. Tolerances (film thickness) can be controlled to a millionth of a centimeter. Very adherent films of sputtered Teflon can be deposited in a single operation on any type of material (metal, glass, paper) and on any geometrical configuration with a dense adherent film.

01 Jan 1972
TL;DR: In this paper, a focused laser beam was used to create local heating sufficient to causc tungsten deposition from the Tungsten hexafluoride-hydrogen reaction.
Abstract: From fourth international conference on chemical deposition vapor; Boston, Massachusetts. USA (7 Oct 1973). It is shown that a focused laser beam can be used to create local heating sufficdent to causc tungsten deposition from the tungsten hexafluoride-hydrogen reaction. Using this techniquc, tungsten film patterns have been generated. Film resistivities are shown to depend on the - inear power density-. Problems and limitations of this method of film deposition are discussed. (auth)

Journal ArticleDOI
TL;DR: In this paper, seven new infrared laser lines have been observed in magnesium vapor, two as transition points in Mg II and four as transition point transitions in the Mg I.
Abstract: Seven new infrared laser lines have been observed in magnesium vapor. Six are identified, two as transitions in Mg II and four as transitions in Mg I.