scispace - formally typeset
Search or ask a question

Showing papers on "Pulsed laser deposition published in 1975"



Journal ArticleDOI
TL;DR: In this paper, a form of deposition in which material is vaporized in a crucible and the vapor then ejected through a fine nozzle at the focus of an electron beam in a high vacuum is described.
Abstract: We describe a form of deposition in which material is vaporized in a crucible and the vapor then ejected through a fine nozzle at the focus of an electron beam in a high vacuum. The vapor, on emerging from the nozzle, is partially condensed into clusters that are ionized by electron bombardment and then accelerated onto the substrate. The deposited films show good adhesion and large crystallite size. Examples include the deposition of Cu onto glass, Si onto Si, and ZnS onto NaCl.

108 citations


Patent
02 Sep 1975
TL;DR: In this paper, a vapor deposition reactor comprising a series of individual gas cells respectively isolated from each other and containing a particular reactive or non-reactive gas required for one stage in a deposition process is described.
Abstract: Disclosed is a vapor deposition reactor comprising a series of individual gas cells respectively isolated from each other and containing a particular reactive or non-reactive gas required for one stage in a deposition process. Each cell is provided with an independent temperature control. A substrate is mounted on a carrier and transported through the series of individual cells so that vapor depositions or other related processes may be conducted or performed upon the substrate. Chemical vapor deposition processes such as growth of epitaxial layer, deposition of polycrystalline silicon, nitride, oxide or metals on a substrate may be performed within the reactor. The cells are isolated by viscous loss seals formed by the propinquity of restricted openings in the reactor to substrate carrier configuration.

36 citations


Patent
17 Mar 1975
TL;DR: In this article, an improved method is disclosed for coating substrates such as turbine engine parts, at high rates by a physical vapor deposition process, where the substrate to be coated and a vapor source such as a metal alloy, heated by an electron beam, are placed in a chamber in which a gas pressure of greater than about 5 mT is maintained.
Abstract: An improved method is disclosed for coating substrates, such as turbine engine parts, at high rates by a physical vapor deposition process. The substrate to be coated and a vapor source, such as a metal alloy, heated by an electron beam, are placed in a chamber in which a gas pressure of greater than about 5 mT is maintained. When the source material is evaporated at a very high rate, such as greater than about 0.1 g/s or 13 g/s.m.sup. 2, the vapor is collimated and the collimation increases as the gas pressure or the evaporation rate increases. Collimation of the vapor allows a much higher deposition rate for a given evaporation power. Further, a much higher fraction of the evaporated material is deposited on the substrate. Despite the collimation, evaporated material deposits on areas of the substrate which are not in line-of-sight of the vapor source. If desired a substrate bias can be applied to bombard the substrate with ions before and during coating.

22 citations


Patent
Dale E. Morton1
03 Nov 1975
TL;DR: In this paper, an improved optical thin film coating system comprising all essential elements of resistive and electron beam evaporation systems, chemical vapor deposition systems and reactive plasma deposition systems is presented.
Abstract: Disclosed is an improved optical thin film coating system comprising all essential elements of resistive and electron beam evaporation systems, chemical vapor deposition systems and reactive plasma deposition systems. Sequences of cleaning and deposition processes which previously required moving substrates through several chambers are performed in a single vacuum chamber. The evaporative sources also efficiently vaporize solid materials to provide reactive gases for reactive plasma and chemical vapor deposition processes, which were previously difficult or impossible to perform. Substrate movement, masking, and monitoring means previously used with evaporative sources are used to control thickness and uniformity of films deposited by chemical vapor and reactive plasma processes, to provide optical quality films.

18 citations


Journal ArticleDOI
TL;DR: The results of an experimental investigation of a gas-discharge pulse laser on the transition of the N + 2 molecule (λ = 4278 A) are given in this article.

13 citations


Book ChapterDOI
L.L. Chang1, R. Ludeke1
01 Jan 1975

13 citations


Journal ArticleDOI
TL;DR: In this article, an epitaxial vacuum deposition system was used to grow heterostructure PbSl−xSex diode lasers that operated at 12K with threshold current densities as low as 60A/cm3.
Abstract: This paper describes an epitaxial vacuum deposition system used to grow heterostructure PbSl−xSex diode lasers that operated cw at 12K with threshold current densities as low as 60A/cm3. The relatively low temperature (300°C) growth process, which simulates closed tube vapor phase growth, minimizes substrate-epilayer strain and vacancy interdiffusion. Laser devices were fabricated by sequential evaporation of n-type and p-type PbSl−xSex layers onto PbSl−ySey substrates. n-type grown layers were sometimes found to have Pb-rich droplets on their surfaces, and a correlation has been made between the presence of these droplets and the starting source material.

11 citations





Patent
27 Feb 1975
TL;DR: In this paper, the authors describe a biological cell analyser consisting of a moving strip in which the specimens are implanted, which passes under the scanning beam of a continuously emitting -or pulse-type laser.
Abstract: The biological cell analyser comprises a moving strip (2) in which the specimens are implanted, which passes under the scanning beam of a continuously emitting - or pulse-type laser. The laser beam is made to transverse the specimen in a direction at right angles to its travel along the transport mechanism. By this means each specimen is illuminated by a grid scanning area (4) in an extremely short interval - of the order of microseconds. The laser beam is deflected by mechanical or electrical means at a frequency of at least 10 kHz. A pulse laser transmission allows digital measurement techniques to be used for determining cell fluorescence, absorption and scatter parameters.


Journal ArticleDOI
TL;DR: In this paper, the separation of the H, C, and O isotopes was achieved by the excitation of glyoxal (H2C2O2) vapor with the radiation emitted from a pulse laser whose resonator contained an absorption cell filled with an H2C 2O2 dye.
Abstract: Separation of the H, C, and O isotopes was achieved by the excitation of glyoxal (H2C2O2) vapor with the radiation emitted from a pulse laser whose resonator contained an absorption cell filled with an H2C2O2 dye.

Journal ArticleDOI
TL;DR: In this article, a pulsed discharge−pumped (nonchemical) HF laser was used to achieve an output power of 8 kW/cm2 in a 2.5−μsec pulse length.
Abstract: Experiments with a pulsed discharge−pumped (nonchemical) HF laser are described. The laser discharge is sustained with a cold cathode electron beam gun. An output power of 8 kW/cm2 in a 2.5−μsec pulse length is obtained. Several observations regarding the laser mechanism are made.

Journal ArticleDOI
Akio Sato1, Shigehiko Sato1, Eiichi Okamoto1
20 Jul 1975-Shinku
TL;DR: In this paper, the deposition of SiO2 film by RF-sputtering onto the anodic Ta2O5 film for fabrication of an SiO 2-Ta 2O5 thin film capacitor is reported.
Abstract: Here, deposition of SiO2 film by RF-sputtering onto the anodic Ta2O5 film for fabrication of an SiO2-Ta2O5 thin film capacitor is reported. Reproducible film deposition rate is achieved within the accuracy of 3% by decreasing the influence of adsorbed gases in the vacuum chamber. Argon pressure is adjusted in order to obtain the uniform deposition of the SiO2 film. The thickness distribution is less than 3% within the area covered by 70% of target radius. The standard deviation of capacitance due to the distribution of SiO2 films is about 2.5% of the average capacitance.The substate temperature should be precisely controlled during RF-sputtering for the realization of the capacitor with excellent electrical characteristics. The high substrate temperature causes deterioration of Ta2O5, but the SiO2 film deposited at low temperature has poor life stability and large capacitance change in moisture. The optimum substrate temperature is about 150 °C for the SiO2 film deposition onto the anodic Ta2O5 film.