Showing papers on "Pulsed laser deposition published in 1977"

Germanium and Silicon Film Growth by Low-Energy Ion Beam Deposition

Abstract: The design and characteristics of a low-energy ion beam deposition system are discussed. In the system, metal ions with an energy of 100 eV are deposited onto the substrate at a current density of 4–5 µA/cm2. Germanium single crystalline films are deposited on germanium (111) and silicon (111) substrate at substrate temperatures above 300°C. In the case of deposition below 200°C, films are found to be amorphous and re-crystallized by annealing above 300°C. When the ion energy over 500 eV is used, sputtering of the substrate is dominant and deposition is not observed for Ge+ ions and the silicon substrate combination. The results demonstrated the feasibility of growing thin film by low-energy ion beam deposition.

Laser spectrochemical analysis

Abstract: A sample of material to be analyzed is applied in a thin layer to a substrate such as an elongated tape and then is illuminated by a laser beam of such wavelength and power that at least a portion of the sample is vaporized. The substrate is non-absorptive at the laser wavelength and therefore is unaffected by the laser beam. The vaporized matter is removed from the region at which vaporization takes place, and is subsequently excited in a plasma to facilitate analysis by a conventional spectrometer.

Vapor phase growth technique of III-V compounds utilizing a preheating step

Abstract: In the vapor phase epitaxy fabrication of semiconductor devices and in particular semiconductor lasers, the deposition body on which a particular layer of the laser is to be grown is preheated to a temperature about 40° to 60° C. lower than the temperature at which deposition occurs. It has been discovered that by preheating at this lower temperature there is reduced thermal decomposition at the deposition surface, especially for semiconductor materials such as indium gallium phosphide and gallium arsenide phosphide. A reduction in thermal decomposition reduces imperfections in the deposition body in the vicinity of the deposition surface, thereby providing a device with higher efficiency and longer lifetime.

High pulse rate, mode-locked copper vapor laser

Abstract: The operating characteristics of a compact copper vapor laser which displays self-mode-locked operation and is capable of operating at pulse rates to 150 kHz are described.

Nozzle beam type metal vapor source

Abstract: A novel, high-flux source for use in the vapor deposition of electrode maials, such as gold, during the fabrication of precision quartz-crystal resonators, or the like The design is based on the theory and technology of nozzle beams The nozzle beam type source disclosed herein is conceived: (1) to permit large deposition rates with minimum wastage of electrode material; (2) to operate in high vacuum; (3) to emit vapor in a horizontal direction, thereby permitting the use of a pair of sources to plate both sides of a substrate simultaneously; and (4) to operate for extended periods of time without requiring frequent breaking of the vacuum in order to replenish the source It is estimated that this design can operate at a deposition rate equal or above that of a conventional evaporation-type source with less than one percent of the wastage of electrode material experienced with a conventional source

Method of producing magnetic thin film

Abstract: of the Disclosure A method of producing .gamma.- Fe203 magnetic disk medium of continuous thin film is provided, in which a deposition source is deposited on an opposed Al-alloy substrate by means of a reactive vacuum deposition technique and the deposited film is thermally treated so as to be the magnetic disk medium. As the deposition source, a ferroalloy containing about 1 to 10 at.% Ti and about 0.5 to 5 at.% Co is employed.

Optically Pumped Continuous Alkali Dimer Lasers

Abstract: Gases and vapors of simple molecules are promising candidates for efficient, scalable and tunable lasers in the ultraviolet, visible and near infrared. This paper reports on laser investigations of optically pumped alkali dimers, which are of special interest, due to their simple molecular structure, stability, ease of production and favorable absorption and emission cross sections. Pulsed laser oscillation in molecular sodium was first observed by Henesian et al. [1] and Itoh et al. [2]. In a recently published paper [3] we reported first continuous laser operation of Na2 molecules. In the meantime this system was studied in more detail and laser operation with other alkali dimers was achieved. Furtheron successful pulse laser operation of sulphur dimers [4] and cw oscillation of J2 [5] was reported.

Pulsed laser heating of thin opaque targets in air

Abstract: A simple analytical model has been developed which describes the heating of a thin opaque target in air when subjected toirradiation from a high‐power pulse laser. Effects due to the formation of a laser supported absorption wave (LSAW) above the target surface are explicitly included in this model. The results shows that despite the increased coupling due to the presence of the LSAW, the resultant target heating from a tightly focused beam (small spot diameter) can be severely retarded by energy spreading as the LSAW expands over the target surface.

Compact vapor deposition system

Abstract: The design, construction, and operation of a compact vapor deposition system is described.(AIP)

Heating of polymer surfaces during the vacuum deposition of metals

Abstract: 1. The heating of polymer surfaces associated with vacuum metal deposition is determined by the deposition rate and the deposition time and also by the thermo-physical characteristics of the substrate—growing film system, and at high deposition rates may reach the phase-transition temperatures of the polymers.

Pulse laser unit

Abstract: PURPOSE:To secure stabilized output of laser beam by having high-accuracy and high-efficiency measurement of the laser beam output without stopping the irradiation of the laser beam.