Showing papers on "Pulsed laser deposition published in 1999"
TL;DR: In this paper, high-quality indium-tin-oxide (ITO) thin films were grown by pulsed laser deposition (PLD) on glass substrates without a postdeposition annealing treatment.
Abstract: High-quality indium–tin–oxide (ITO) thin films (200–850 nm) have been grown by pulsed laser deposition (PLD) on glass substrates without a postdeposition annealing treatment. The structural, electrical, and optical properties of these films have been investigated as a function of target composition, substrate deposition temperature, background gas pressure, and film thickness. Films were deposited from various target compositions ranging from 0 to 15 wt % of SnO2 content. The optimum target composition for high conductivity was 5 wt % SnO2+95 wt % In2O3. Films were deposited at substrate temperatures ranging from room temperature to 300 °C in O2 partial pressures ranging from 1 to 100 mTorr. Films were deposited using a KrF excimer laser (248 nm, 30 ns full width at half maximum) at a fluence of 2 J/cm2. For a 150-nm-thick ITO film grown at room temperature in an oxygen pressure of 10 mTorr, the resistivity was 4×10−4 Ω cm and the average transmission in the visible range (400–700 nm) was 85%. For a 170-n...
1,202 citations
TL;DR: In this article, the lattice constants of both a and c axes of wurtzite Zn1−xMnxO films (x < 0.35) increase and the band gap expands although considerable in-gap absorption develops.
Abstract: Epitaxial thin films of an oxide-diluted magnetic semiconductor, Mn-doped ZnO, were fabricated by pulsed-laser deposition technique. Solubility of Mn into ZnO exceeds thermal equilibrium limit as a result of nonequilibrium film growth process. As Mn content is increased, the lattice constants of both a and c axes of wurtzite Zn1−xMnxO films (x<0.35) increase and the band gap expands although considerable in-gap absorption develops. Itinerant electrons over 1019 cm−3 can be doped into the Zn1−xMnxO films by Al doping, in contrast to low carrier density in the other II–VI diluted magnetic semiconductors. The temperature dependence of the resistivity is almost metallic and considerable magnetoresistance is observed at low temperatures.
657 citations
TL;DR: In this paper, ZnO thin films were epitaxially grown on c-sapphire substrates by pulsed laser deposition at substrate temperatures of 500-800 °C.
Abstract: ZnO thin films were epitaxially grown on c-sapphire substrates by pulsed laser deposition at substrate temperatures of 500–800 °C. The crystal structure of ZnO films follow the epitaxial relationship of (0001)ZnO∥(0001)Al2O3(1010)ZnO∥(1120)Al2O3. Both room temperature and cryogenic temperature photoluminescence showed a remarkable band-edge transition, and clear excitonic structures could be seen at cryogenic temperature. The optical refractive index was measured in the range of 375–900 nm by varying angle spectroscopic ellipsometry. The simulation was carried out using a Sellmeier equation.
545 citations
TL;DR: In this article, the optical and structural properties of high-quality single-crystal epitaxial MgZnO films deposited by pulsed-laser deposition were studied.
Abstract: The optical and structural properties of high-quality single-crystal epitaxial MgZnO films deposited by pulsed-laser deposition were studied. In films with up to ∼36 at. % Mg incorporation, we have observed intense ultraviolet band edge photoluminescence at room temperature and 77 K. The highly efficient photoluminescence is indicative of the excitonic nature of the material. Transmission spectroscopy was used to show that the excitonic structure of the alloys was clearly visible at room temperature. High-resolution transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectroscopy/ion channeling were used to verify the epitaxial single-crystal quality of the films and characterize the defect content. Post-deposition annealing in oxygen was found to reduce the number of defects and to improve the optical properties of the films. These results indicate that MgZnO alloys have potential applications in a variety of optoelectronic devices.
386 citations
TL;DR: In this article, high-quality indium tin oxide (ITO) thin films (150-200 nm) were grown on glass substrates by pulsed laser deposition (PLD) without postdeposition annealing.
Abstract: High-quality indium tin oxide (ITO) thin films (150–200 nm) were grown on glass substrates by pulsed laser deposition (PLD) without postdeposition annealing. The electrical, optical, and structural properties of these films were investigated as a function of substrate temperature, oxygen pressure, and film thickness. PLD provides very uniform ITO films with high transparency (⩾85% in 400–700 nm spectrum) and low electrical resistivity (2–4×10−4 Ω cm). The Hall mobility and carrier density for a 170-nm-thick film deposited at 300 °C are 29 cm2/V s and 1.45×1021 cm−3, respectively. Atomic force microscopy measurements of the ITO films indicated that their root-mean-square surface roughness (∼5 A) is superior to that (∼40 A) of commercially available ITO films deposited by sputtering. ITO films grown at room temperature by PLD were used to study the electroluminescence (EL) performance of organic light-emitting devices. The EL performance was comparable to that measured with commercial ITO anodes.
377 citations
TL;DR: In this paper, the optical properties of high quality single crystal epitaxial zinc oxide thin films grown by pulsed laser deposition on c-plane sapphire substrates were studied.
Abstract: The optical properties of high quality single crystal epitaxial zinc oxide thin films grown by pulsed laser deposition on c-plane sapphire substrates were studied. It was found that annealing the films in oxygen dramatically improved the optical and electrical properties. The absorption coefficient, band gap, and exciton binding energies were determined by transmission measurements and photoluminescence. In both the annealed and the as-deposited films excitonic absorption features were observed at both room temperature and 77 K. In the annealed films the excitonic absorption peaks were substantially sharper and deep level photoluminescence was suppressed.
337 citations
TL;DR: In this paper, a surface and/or interface related dead layer is inferred from the thickness-dependent resistance and magnetoresistance of ultrathin films of La0.67Sr0.33MnO3.
Abstract: To understand the near-interface magnetism in manganites, ultrathin films of La0.67Sr0.33MnO3 were grown epitaxially on single-crystal (001) LaAlO3 and (110) NdGaO3 substrates. The temperature and magnetic field-dependent film resistance is used to probe the film’s structural and magnetic properties. A surface and/or interface related dead layer is inferred from the thickness-dependent resistance and magnetoresistance. The total thickness of the dead layer is estimated to be ∼30 A for films on NdGaO3 and ∼50 A for films on LaAlO3.
335 citations
TL;DR: In this article, the influence of oxygen pressure on the epitaxy, surface morphology, and optoelectronic properties has been studied in the case of ZnO thin films grown on sapphire (0001) by pulsed-laser deposition.
Abstract: Influence of oxygen pressure on the epitaxy, surface morphology, and optoelectronic properties has been studied in the case of ZnO thin films grown on sapphire (0001) by pulsed-laser deposition. Results of Rutherford backscattering and ion channeling in conjunction with atomic force microscopy clearly indicate that the growth mode, degree of epitaxy, and the defect density strongly depend on the oxygen background pressure during growth. It is also found that the growth mode and the defects strongly influence the electron mobility, free-electron concentration, and the luminescence properties of the ZnO films. By tuning the oxygen pressure during the initial and the final growth stages, smooth and epitaxial ZnO films with high optical quality, high electron mobility, and low background carrier concentration have been obtained. The implication of these results towards the fabrication of superlattices and controlled n- and p-type doping is discussed.
318 citations
Patent•
05 May 1999TL;DR: In this article, an annular magnetron sputterin target is ionized in a processing space between the target and a substrate by generating a dense plasma in the space with energy coupled from a coil (39) located outside of the vacuum chamber.
Abstract: Ionized Physical Vapor Deposition (IPVD) is provided by a method of apparatus (500) particularly useful for sputtering conductive metal coating material from an annular magnetron sputterin target (10). The sputtered material is ionized in a processing space between the target (10) and a substrate (100) by generating a dense plasma in the space with energy coupled from a coil (39) located outside of the vacuum chamber (501) behind a dielectric window (33) in the chamber wall (502) at the center of the opening (421) in the sputtering target. A Faraday type shield (26) physically shields the window to prevent coating material from coating the window, while allowing the inductive coupling of energy from the coil into the processing space. The location of the coil in the plane of the target or behind the target allows the target-to-wafer spacing to be chosen to optimize film deposition rate and uniformity, and also provides for the advantages of a ring-shaped source without the problems associated with unwanted deposition in the opening at the target center.
295 citations
TL;DR: In this paper, single phase thin films of Ba0.5Sr 0.5TiO3 (BST) have been deposited onto MgO and LaAlO3 substrates using pulsed laser deposition and the capacitance and dielectric Q (1/tan δ) of as-deposited and annealed films have been measured from 1 to 20 GHz as a function of electric field (0-80 kV/cm) at room temperature using interdigitated Ag electrodes.
Abstract: Oriented, single phase thin films (∼5000 A thick) of Ba0.5Sr0.5TiO3 (BST) have been deposited onto (100) MgO and (100) LaAlO3 (LAO) substrates using pulsed laser deposition. The capacitance and dielectric Q (1/tan δ) of as-deposited and annealed films have been measured from 1 to 20 GHz as a function of electric field (0–80 kV/cm) at room temperature using interdigitated Ag electrodes deposited on top of the film. For films deposited onto MgO, it is observed that, after a postdeposition anneal (1000–1200 °C), the dielectric constant decreases and the dielectric Q increases. For films deposited onto LAO, a postdeposition anneal (⩽ 1000 °C) resulted in a significant increase in the dielectric constant and a decrease in Q. The observed dielectric properties of the BST films are attributed to the changes in film stress, which affects the extent of ionic polarization.
260 citations
TL;DR: In this paper, lattice-matched (Δa/a=0.09%) ScAlMgO4(0001) substrates were employed to grow single crystalline quality ZnO films by laser molecular-beam epitaxy.
Abstract: Lattice-matched (Δa/a=0.09%) ScAlMgO4(0001) substrates were employed to grow single crystalline quality ZnO films by laser molecular-beam epitaxy. Extremely smooth surface represented by atomically flat terraces and half unit cell (0.26 nm) high steps and extremely small orientation fluctuations both in-plane (<0.02°) and out-of-plane (<0.01°) are achieved. The films have high mobility (∼100 cm2/V s) together with low residual carrier concentration (∼1015 cm−3). Excellent optical properties, including a clear doublet of A and B exciton peaks in absorption spectra, were also observed. These features could not be simultaneously achieved for ZnO films grown on sapphire(0001) having a large lattice mismatch (Δa/a=18%).
TL;DR: In this paper, thin films of tungsten oxide were deposited on SnO2:F coated glass using pulsed laser deposition using Raman spectroscopy, and the decrease of the optical band gap was ascribed to a decrease of WO/O-W −W −O ratio correlated to an increase of the cluster size of tengsten oxide with crystallinity.
TL;DR: In this article, it is proposed that microcolumn growth occurs through a combination of pulsed-laser melting of the tips of the columns and deposition of silicon from the intense flux of silicon-rich vapor produced by ablation of the surface regions between columns.
Abstract: Arrays of high aspect ratio silicon microcolumns that protrude well above the initial surface have been formed by cumulative nanosecond pulsed-excimer laser irradiation of silicon. Microcolumn growth is strongly affected by the gas environment, being enhanced in air or other oxygen-containing ambient. It is proposed that microcolumn growth occurs through a combination of pulsed-laser melting of the tips of the columns and deposition of silicon from the intense flux of silicon-rich vapor produced by ablation of the surface regions between columns. The molten tips of the columns are strongly preferred sites for deposition, resulting in a very high axial growth rate. The growth process is conceptually similar to the vapor–liquid–solid method used to grow silicon whiskers. However, in the present case the pulsed-laser radiation fulfills two roles almost simultaneously, viz., providing the flux of silicon-containing molecules and melting the tips of the columns.
TL;DR: In this paper, Li-doped ZnO films of different compositions (Zn1−xLix)O, x=0.1, 0.17, and 0.3 have been prepared on Si(100) substrates, with no buffer layer, by the pulsed laser deposition method.
Abstract: Thin films of Li-doped ZnO of different compositions (Zn1−xLix)O, x=0.1, 0.17, and 0.3 have been prepared on Si(100) substrates, with no buffer layer, by the pulsed laser deposition method. Ferroelectric behavior with a memory window of 1.2 V has been observed in capacitance–voltage measurements. The peak maximum in the capacitance–temperature curve suggests that the ferroelectric phase transition occurs around 340 K.
Patent•
18 Mar 1999TL;DR: A method for fabricating a silicon oxide and silicon glass layers at low temperature using soft power-optimized Plasma-Activated CVD with a TEOS-ozoneoxygen reaction gas mixture (TEOS O3/O2 PACVD) is described in this paper.
Abstract: A method for fabricating a silicon oxide and silicon glass layers at low temperature using soft power-optimized Plasma-Activated CVD with a TEOS-ozone-oxygen reaction gas mixture (TEOS O3/O2 PACVD) is described. It combines advantages of both low temperature Plasma-Enhanced Chemical Vapor Deposition (PECVD) and TEOS-ozone Sub-Atmospheric Chemical Vapor Deposition (SACVD) and yields a coating of silicon oxide with stable and high deposition rate, no surface sensitivity, good film properties, conformal step coverage and good gap-fill. Key features of the invention's O3/O2 PACVD process are: a plasma is maintain throughout the entire deposition step in a parallel plate type reactor chamber, the precise RF plasma density, ozone concentration in oxygen and the deposition temperature. These features provide the reaction conditions for the proper O3/O2 reaction mechanism that deposits a conformal silicon oxide layer. The process has significant implication for semiconductor device manufacturing involving the deposition of a dielectric over a conducting non-planar surface.
TL;DR: In this paper, the authors proposed a novel ultrafast pulsed laser deposition (PLD) technique, which eliminates the well-known problem of contamination of the films produced by PLD with particulates ejected from the target.
Abstract: We propose a novel ultrafast pulsed laser deposition (PLD) technique, which eliminates the well-known problem of contamination of the films produced by PLD with particulates ejected from the target. The method uses low energy, picosecond duration laser pulses delivered onto a target at rates of several tens of MHz and thus differs from conventional the PLD method which utilizes high energy, nanosecond duration pulses delivered at low (≈10 Hz) repetition rates. In this article we present the theoretical background justifying the method and define the optimal conditions for efficient evaporation of a target with given thermodynamic properties. By reducing the laser pulse energy while maintaining optimum evaporation, the number of atoms evaporated by each pulse is reduced to the point where it becomes impossible for macroscopic lumps of material to be ejected with the available laser energy, thus preventing the source of particle contamination in the film. To achieve high evaporation rate, the laser pulse re...
TL;DR: In this article, Ba0.5Sr 0.5TiO3 thin films have been synthesized on (001) LaAlO3 substrates by pulsed laser ablation.
Abstract: Perovskite Ba0.5Sr0.5TiO3 thin films have been synthesized on (001) LaAlO3 substrates by pulsed laser ablation. Extensive x-ray diffraction, rocking curve, and pole-figure studies suggest that the films are c-axis oriented and exhibit good in-plane relationship of 〈100〉BSTO//〈100〉LAO. Rutherford backscattering spectrometry studies indicate that the epitaxial films have excellent crystalline quality with an ion beam minimum yield χmin of only 2.6%. The dielectric property measurements by the interdigital technique at 1 MHz show room-temperature values of the relative dielectric constant, er, and loss tangent, tan δ, of 1430 and 0.007 with no bias, and 960 and 0.001 with 35 V bias, respectively. The obtained data suggest that the as-grown Ba0.5Sr0.5TiO3 films can be used for development of room-temperature tunable microwave elements.
TL;DR: In this article, the effect of misfit strain on the microstructure and properties of ferroelectric lead zirconate titanate thin films was studied by varying the film thickness and the thickness effect on domain formation of epitaxial PbZr02Ti08O3 (PZT) films.
Abstract: We have studied the effect of misfit strain on the microstructure and properties of ferroelectric lead zirconate titanate thin films We have changed the misfit strain by varying the film thickness and studied the thickness effect on the domain formation of epitaxial PbZr02Ti08O3 (PZT) films grown by pulsed laser deposition on (001) LaAlO3 substrates with La05Sr05CoO3 (LSCO) electrodes The nominal thickness of the PZT films was varied from 60 to 400 nm with the LSCO electrode thickness kept constant at 50 nm X-ray diffraction experiments show that the films relax via the formation of a domains, the fraction of which increase with the ferroelectric film thickness The c-axis lattice constant of PZT films calculated from the 002 reflection decreases with increasing film thickness and approaches the bulk value of ∼0413 nm in the films thicker than 300 nm Cross-sectional transmission electron microscopy images reveal that the a-domain fraction and period increase with increasing film thickness The relaxation of misfit strain in the film is accompanied by systematic changes in the polarization properties, as well as the switching fields, quantified by the coercive field and the activation field
TL;DR: In this article, an epitaxial thin film of double perovskite with half-metallic nature was successfully prepared by pulsed laser deposition in a narrow window of the temperature and oxygen pressure.
Abstract: Epitaxial thin films of Sr2FeMoO6, that are ordered double perovskite with half-metallic nature, have been successfully prepared on SrTiO3 (001) and (111) substrates by pulsed laser deposition in a narrow window of the temperature and oxygen pressure From the surface morphology analysis for the atomic scale step-and-terrace structures, the film growth is concluded to take place with the chemical formula as the growth unit when the ordering direction is normal to the surface The films showed metallic conduction with ferromagnetic transition temperature above 400 K and intergrain tunneling type magnetoresistance even at room temperature
TL;DR: In this paper, a growth method based on a periodic sequence is introduced, which is able to grow in a layer-by-layer fashion in a growth regime (temperature, pressure) where otherwise island formation would dominate the growth.
Abstract: Pulsed laser deposition has become an important technique to fabricate novel materials. Although there is the general impression that, due to the pulsed deposition, the growth mechanism differs partially from continuous physical and chemical deposition techniques, it has hardly been used. Here, we will introduce a growth method, based on a periodic sequence: fast deposition of the amount of material needed to complete one monolayer followed by an interval in which no deposition takes place and the film can reorganize. This makes it possible to grow in a layer-by-layer fashion in a growth regime (temperature, pressure) where otherwise island formation would dominate the growth.
TL;DR: In this paper, the authors reported an experimental demonstration of the process by creating ultrasmooth, thin, amorphous carbon films using high repetition rate Nd:YAG lasers.
Abstract: Ultrafast pulsed laser deposition is a novel technique for depositing particle-free, thin solid films using very high repetition rate lasers. The process involves evaporation of the target by low energy laser pulses focused to an optimum intensity to eliminate particles from the vapor. This results in films with very high surface quality while the very high repetition rate increases the overall deposition rate. Here we report an experimental demonstration of the process by creating ultrasmooth, thin, amorphous carbon films using high repetition rate Nd:YAG lasers. Both a 10 kHz, 120 ns Q-switched Nd:YAG laser, or a 76 MHz 60 ps mode-locked Nd:YAG laser were used in the experiments. The number of particles visible with an optical microscope on the carbon film deposited using the mode-locked laser was less than one particle per mm2. Scanning electron microscopy images demonstrated that the deposited film had a very fine surface texture with nanoscale irregularities. Atomic force microscopy surface microroug...
TL;DR: In this article, single-phase Na0.5K 0.5NbO3 (NKN) thin films have been grown on polycrystalline Pt80Ir20 (Pt) and SiO2 (native oxide)/Si (111) substrates using KrF excimer laser ablation of a stoichiometric ceramic target.
Abstract: Highly [100]-axis oriented single-phase Na0.5K0.5NbO3 (NKN) thin films have been grown on polycrystalline Pt80Ir20 (Pt) and SiO2 (native oxide)/Si (111) substrates using KrF excimer laser ablation of a stoichiometric ceramic target. X-ray diffraction θ–2θ scan and rocking curve data are evidence of the strong effect of film self-assembling along the [100] direction regardless of the substrate texture. Furthermore, multiple-cell structuring along the polar axis has been observed in NKN films grown onto the Pt substrate. Ferroelectric measurements yield remnant polarization Pr of 10 μC/cm2 and spontaneous polarization Ps of 17.5 μC/cm2 at 80 kV/cm. The electrical resistivity of the Na0.5K0.5NbO3 film was in the order of 1010 Ω cm at 10 kV/cm. Dielectric permittivity e′ and dissipation factor tan δ have been found to vary 480–440 and 0.028–0.024, respectively, in the frequency range 0.4–100 kHz.
TL;DR: In this paper, a ternary composition spread of (Ba1−x−ySrxCay)TiO3 on an equilateral-triangle-shaped LaAlO3 substrate was achieved by a precisely controlled shutter system inside a pulsed laser deposition chamber.
Abstract: We have generated the thin-film ternary composition spread of (Ba1−x−ySrxCay)TiO3 on an equilateral-triangle-shaped LaAlO3 substrate. Compositional variation within the triangle was achieved by a precisely controlled shutter system inside a pulsed laser deposition chamber, which allows the deposition of precursors with gradient thickness over the length of the substrate. Appropriate postannealing afforded high-quality epitaxial thin films over almost the entire composition region. Mapping of the microwave dielectric properties of the composition-spread chip was performed using a scanning evanescent microwave microscope at 1 GHz. Composition region Ba0.12–0.25Sr0.35–0.47Ca0.32–0.53TiO3 was found to have desirable properties for electronic applications.
TL;DR: In this paper, a high-temperature, oxygen compatible, and compact laser molecular beam epitaxy (laser MBE) system was developed, where the 1.06 μm infrared light from a continuous wave neodymium-doped yttrium aluminum garnet (Nd:YAG) laser was used to achieve a wide range and rapid control of substrate temperature in ultrahigh vacuum and at up to 1 atm oxygen pressure.
Abstract: A high-temperature, oxygen compatible, and compact laser molecular beam epitaxy (laser MBE) system has been developed. The 1.06 μm infrared light from a continuous wave neodymium-doped yttrium aluminum garnet (Nd:YAG) laser was used to achieve a wide range and rapid control of substrate temperature in ultrahigh vacuum and at up to 1 atm oxygen pressure. The maximum usable temperature was limited to 1453 °C by the melting point of the nickel sample holder. To our knowledge, this is the highest temperature reported for pulsed laser deposition of oxide films. The efficient laser heating combined with temperature monitoring by a pyrometer and feedback control of the Nd:YAG laser power by a personal computer made it possible to regulate the substrate temperature accurately and to achieve high sample heating and cooling rates. The oxygen pressure and ablation laser triggering were also controlled by the computer. The accurate growth parameter control was combined with real-time in situ surface structure monitor...
TL;DR: Vanadium pentoxide thin films were obtained by pulsed-laser deposition onto various substrates as discussed by the authors, and the growth was performed at different oxygen pressures and substrate temperatures, and it was found that the films deposited on glass are amorphous and exhibit a polycrystalline structure upon thermal treatment as evidenced by X-ray diffraction and Raman scattering spectroscopy.
Abstract: Vanadium pentoxide thin films were obtained by pulsed-laser deposition onto various substrates. The growth was performed at different oxygen pressures and substrate temperatures. It is found that the films deposited on glass are amorphous and exhibit a polycrystalline structure upon thermal treatment as evidenced by X-ray diffraction and Raman scattering spectroscopy. The films deposited onto silicon wafer have an excellent crystallinity when deposited at substrate temperatures of 300°C and an oxygen pressure of 50 mTorr. V2O5 thin films obtained by this method were successfully used as a cathode materials in lithium microbatteries. Electrochemical measurements show a good cyclability of pulsed laser deposited films.
TL;DR: In this paper, the effect of ambient gas (O 2 or Ar) and temperature on film quality was investigated and the effects of target morphology and target density on the sizes and the distribution densities of the particulates formed in the deposited thin film.
TL;DR: In this article, the chemical diffusion coefficient of V 2 O 5 and LiCoO 2 was measured by the potentiostatic intermittent titration technique (PITT) and the maximum and minimum D were found to be 1.7×10 −12 cm 2 s −1 and 5.8×10−15 cm 2 S −1 respectively, with a general trend for D to rise in single-phase regions.
Patent•
22 Apr 1999
TL;DR: Sputtering method for producing amorphous hydrogenated carbon thin films with high sp3 content was proposed in this article by sputtering the carbon with a pulsed DC power supply having high voltage peaks.
Abstract: Sputtering method for producing amorphous hydrogenated carbon thin films with high sp3 content. By sputtering the carbon with a pulsed DC power supply having high voltage peaks, a carbon film with remarkably high sp3 bonding fraction can be obtained. Previously, carbon films with a very high sp3 fraction film with content as high (e.g. as 80%) could only be produced by methods such as filtered cathodic arc deposition or chemical vapor deposition methods (CVD) such as plasma-enhanced chemical vapor deposition (PE-CVD) and ion-beam deposition operating at some narrowly defined range of deposition conditions. It is very advantageous to use sputtering to create a high sp3 content film, since sputtering is more manufacturable and has higher productivity compared to CVD or ion-beam deposition methods. The resultant carbon film has excellent durability and corrosion resistance capability down to very low thickness. Also compared to PE-CVD and ion-beam deposition, the new sputtering process produce much less particles and the process can be run on a manufacturing tool for much longer time, thereby increasing the productivity of the machine, and providing disks with higher quality.
TL;DR: In this paper, a phase diagram for (La 1−xCax)1−y□yMnO3 (01
Abstract: Oriented, single phase thin films of La1−xCaxMnO3 have been deposited onto (100)-oriented LaAlO3 (01
TL;DR: In this article, the structure, surface composition, electrical resistivity, stress, work function and morphology of the PLD TiC films were characterized as a function of the deposition temperature.