Pulsed laser deposition

About: Pulsed laser deposition is a research topic. Over the lifetime, 29264 publications have been published within this topic receiving 496572 citations. The topic is also known as: pulsed laser deposition & PLD.

PIEZORESPONSE FORCE MICROSCOPY OF PLD-GROWN MULTIFERROIC BiFeO3 FILMS AND MESOSTRUCTURES

Abstract: Bismuth ferrite BiFeO3 is a multiferroic material, exhibiting both electric and magnetic ordering at room temperature, properties which make it a promising material for use in novel device fabrication. We report here the successful fabrication of BiFeO3 thin films and of isolated micron-sized structures by pulsed laser deposition. We present the structure and morphology of the films as well as their local ferroelectric properties investigated by piezoresponse force microscopy, a unique tool for the study of the basic piezoelectric & ferroelectric phenomena at the nanometer scale (ferroelectric domains imaging and local switching). In addition, preliminary magnetic measurements demonstrate the coexistence at room temperature of weak ferromagnetism and of ferroelectricity.

Microstructure and ferroelectric properties of low-fatigue epitaxial, all (001)-oriented (Bi,La)4Ti3O12∕Pb(Zr0.4Ti0.6)O3∕(Bi,La)4Ti3O12 trilayered thin films on (001) SrTiO3 substrates

Abstract: (Bi,La)4Ti3O12(BLT)∕Pb(Zr,Ti)O3(PZT)∕(Bi,La)4Ti3O12 trilayered ferroelectric thin films were epitaxially grown by pulsed laser deposition onto (001) SrTiO3 (STO) substrates with and without SrRuO3 (SRO) bottom electrodes. From x-ray pole figures and electron-diffraction patterns, the epitaxial relationships between BLT, PZT, SRO, and STO were identified to be BLT(001)‖PZT(001)‖SRO(001)‖SrTiO3(001); BLT[110]‖PZT[100]‖SRO[100]‖SrTiO3[100]. Cross-sectional transmission electron microscopy investigations revealed that 90° ferroelectric domain boundaries lying on {110} planes are present in the PZT layer, with an average domain width of 20nm and an average spacing of 120nm. These long 90° ferroelectric domains, as a rule having nucleated at the bottom of the PZT layer, extend to the top of the latter. The thin films have sharp BLT/PZT interfaces and a very flat surface. The remanent polarization and coercive field were determined as 13.9μC∕cm2 and 72.9kV∕cm, respectively, indicating that the epitaxial, all (00...

Photoemission studies of AsxSe100−x (x: 0, 50, 100) films prepared by pulsed-laser deposition—the effect of annealing

Abstract: Annealing-induced structural changes in amorphous films AsxSe100−x (x: 0, 50, 100) prepared by pulsed laser deposition (PLD) on Si substrates were studied by x-ray and ultraviolet photoelectron spectroscopies (XPS, UPS). For x = 50, the analysis of the XPS As 3d peak revealed three distinct local environments in which the As atoms participate in the as-prepared films. The combination of photoemission and work function measurements showed that annealing close to the glass transition temperature induces atomic rearrangements towards the formation of a more homogenous surface composition as well as to a more energetically favoured film structure, by cleavage of the weaker As–As and Se–Se bonds towards the formation of As–Se ones analogously to As–S system films.