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Pulsed laser deposition

About: Pulsed laser deposition is a research topic. Over the lifetime, 29264 publications have been published within this topic receiving 496572 citations. The topic is also known as: pulsed laser deposition & PLD.


Papers
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Journal ArticleDOI
TL;DR: In this article, the topmost oxide layer was observed to hydroxylate after immersion in water, which was used to enhance the etch-selectivity of SrO relative to TiO2 in a buffered HF solution.
Abstract: In recent years, well-defined and nearly perfect single crystal surfaces of oxide perovskites have become increasingly important. A single terminated surface is a prerequisite for reproducible thin film growth and fundamental growth studies. In this work, atomic and lateral force microscopy have been used to display different terminations of SrTiO3. We observe hydroxylation of the topmost SrO layer after immersion of SrTiO3 in water, which is used to enhance the etch-selectivity of SrO relative to TiO2 in a buffered HF solution. We reproducibly obtain perfect and single terminated surfaces, irrespective of the initial state of polished surfaces and the pH value of the HF solution. This approach to the problem might be used for a variety of multi-component oxide single crystals. True two-dimensional reflection high-energy electron diffraction intensity oscillations are observed during homo epitaxial growth using pulsed laser deposition on these surfaces.

693 citations

Journal ArticleDOI
TL;DR: In this article, the lattice constants of both a and c axes of wurtzite Zn1−xMnxO films (x < 0.35) increase and the band gap expands although considerable in-gap absorption develops.
Abstract: Epitaxial thin films of an oxide-diluted magnetic semiconductor, Mn-doped ZnO, were fabricated by pulsed-laser deposition technique. Solubility of Mn into ZnO exceeds thermal equilibrium limit as a result of nonequilibrium film growth process. As Mn content is increased, the lattice constants of both a and c axes of wurtzite Zn1−xMnxO films (x<0.35) increase and the band gap expands although considerable in-gap absorption develops. Itinerant electrons over 1019 cm−3 can be doped into the Zn1−xMnxO films by Al doping, in contrast to low carrier density in the other II–VI diluted magnetic semiconductors. The temperature dependence of the resistivity is almost metallic and considerable magnetoresistance is observed at low temperatures.

657 citations

Book
01 Jan 1994
TL;DR: In this paper, the authors present an overview of the role of plasma-assisted and plasma-enhanced chemical vapor deposition processes in the development of thin films and coatings, as well as their application in a variety of applications.
Abstract: Deposition Technologies: An Overview * Plasmas in Deposition Processes * Surface Preparation For Film and Coating Deposition Processes * Evaporation: Processes, Bulk Microstructures And Mechanical Processes * Sputter Deposition Processes * Ion Plating * Chemical Vapor Deposition * Plasma-Enhanced Chemical Vapor Deposition * Plasma-Assisted Vapor Deposition Processes: Overview * Deposition from Aqueous Solutions: An Overview * Advanced Thermal Spray Deposition Techniques * Non-Elemental Characterization of Films and Coatings * Film Growth and Structure of PVD Deposits * Metallurgical Applications * Characterization of Thin Films And Coatings.

639 citations

Journal ArticleDOI
TL;DR: In this paper, the magnetic properties of carbon-doped ZnO were investigated and it was shown that carbon substitution for oxygen results in a magnetic moment of 1.78 -3.0 \mu_B$ per carbon.
Abstract: We report magnetism in carbon doped ZnO. Our first-principles calculations based on density functional theory predicted that carbon substitution for oxygen in ZnO results in a magnetic moment of 1.78 $\mu_B$ per carbon. The theoretical prediction was confirmed experimentally. C-doped ZnO films deposited by pulsed laser deposition with various carbon concentrations showed ferromagnetism with Curie temperatures higher than 400 K, and the measured magnetic moment based on the content of carbide in the films ($1.5 - 3.0 \mu_B$ per carbon) is in agreement with the theoretical prediction. The magnetism is due to bonding coupling between Zn ions and doped C atoms. Results of magneto-resistance and abnormal Hall effect show that the doped films are $n$-type semiconductors with intrinsic ferromagnetism. The carbon doped ZnO could be a promising room temperature dilute magnetic semiconductor (DMS) and our work demonstrates possiblity of produing DMS with non-metal doping.

622 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023257
2022498
2021614
2020808
2019915
2018818