Topic
Pulsed laser deposition
About: Pulsed laser deposition is a research topic. Over the lifetime, 29264 publications have been published within this topic receiving 496572 citations. The topic is also known as: pulsed laser deposition & PLD.
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TL;DR: In this paper, the authors reported that tin monoxide (SnO) has a high hole mobility and produces good p-type oxide thin-film transistors (TFTs).
Abstract: This paper reports that among known p-type oxide semiconductors, tin monoxide (SnO) has a high hole mobility and produces good p-type oxide thin-film transistors (TFTs) Device-quality SnO films were grown epitaxially on (001) yttria-stabilized zirconia substrates at 575°C by pulsed laser deposition These exhibited a Hall mobility of 24cm2V−1s−1 at room temperature Top-gated TFTs, using epitaxial SnO channels, exhibited field-effect mobilities of 13cm2V−1s−1, on/off current ratios of ∼102, and threshold voltages of 48V
612 citations
TL;DR: In this paper, the analysis of the X-ray photoelectron spectra (XPS) of the C 1s core level of pulsed laser deposited diamond-like carbon thin films, obtained at different laser intensities is presented.
608 citations
Journal Article•
608 citations
TL;DR: In this article, a multistep pulsed-laser deposition (PLD) process is presented for epitaxial, nominally undoped ZnO thin films of total thickness of 1 to 2 μm on c-plane sapphire substrates.
Abstract: A multistep pulsed-laser deposition (PLD) process is presented for epitaxial, nominally undoped ZnO thin films of total thickness of 1 to 2 μm on c-plane sapphire substrates. We obtain reproducibly high electron mobilities from 115 up to 155 cm2/V s at 300 K in a narrow carrier concentration range from 2 to 5×1016 cm−3. The key issue of the multistep PLD process is the insertion of 30-nm-thin ZnO relaxation layers deposited at reduced substrate temperature. The high-mobility samples show atomically flat surface structure with grain size of about 0.5–1 μm, whereas the surfaces of low-mobility films consist of clearly resolved hexagonally faceted columnar grains of only 200-nm size, as shown by atomic force microscopy. Structurally optimized PLD ZnO thin films show narrow high-resolution x-ray diffraction peak widths of the ZnO(0002) ω- and 2Θ-scans as low as 151 and 43 arcsec, respectively, and narrow photoluminescence linewidths of donor-bound excitons of 1.7 meV at 2 K.
594 citations
TL;DR: Cluster-assembled nanocrystalline and composite films offer opportunities to control and produce new combinations of properties with PLD, and artificially layered materials and metastable phases have been created and their properties varied by control of the layer thicknesses.
Abstract: Pulsed laser deposition (PLD) is a conceptually and experimentally simple yet highly versatile tool for thin-film and multilayer research. Its advantages for the film growth of oxides and other chemically complex materials include stoichiometric transfer, growth from an energetic beam, reactive deposition, and inherent simplicity for the growth of multilayered structures. With the use of PLD, artificially layered materials and metastable phases have been created and their properties varied by control of the layer thicknesses. In situ monitoring techniques have provided information about the role of energetic species in the formation of ultrahard phases and in the doping of semiconductors. Cluster-assembled nanocrystalline and composite films offer opportunities to control and produce new combinations of properties with PLD.
586 citations