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Showing papers on "Quantum capacitance published in 1988"


Journal ArticleDOI
TL;DR: In this paper, a two-dimensional electron gas (2DEG) in a quantum well or inversion layer, unlike an ordinary grounded metallic plane, does not completely screen an applied transverse electric field, but partial penetration of an external field through a highly conducting 2DEG allows the implementation of several novel high-speed devices, including a threeterminal resonant tunneling transistor and a gate-controlled thermionic emission transistor.
Abstract: Two‐dimensional electron gas (2DEG) in a quantum well or inversion layer, unlike an ordinary grounded metallic plane, does not completely screen an applied transverse electric field. Owing to its Fermi degeneracy energy, a 2DEG manifests itself as a capacitor in series, whose capacitance per unit area equals CQ=me2/πℏ2, where m is the effective electron mass in the direction transverse to the quantum well. Partial penetration of an external field through a highly conducting 2DEG allows the implementation of several novel high‐speed devices, including a three‐terminal resonant‐tunneling transistor and a gate‐controlled thermionic emission transistor.

793 citations


Journal ArticleDOI
TL;DR: In this article, the operation of a new resonant tunneling transistor is reported in the AlGaAs/GaAs material system, which contains an undoped quantum well collector separated from a heavily doped emitter by a thin tunnel barrier.
Abstract: Operation of a new resonant tunneling transistor is reported in the AlGaAs/GaAs material system. The device contains an undoped quantum well collector separated from a heavily doped emitter by a thin tunnel barrier. The collector is gated and the gate field controls resonant tunneling characteristics ‘‘from behind’’ via a combination of the generalized Stark effect and the quantum capacitance effect. The common‐collector characteristics show negative differential resistance at a fixed gate bias and negative transconductance at a fixed emitter bias. Excellent agreement is found between the measured and calculated shifts of the peaks of the current‐voltage characteristics.

48 citations