Showing papers on "Quantum capacitance published in 1989"
Journal Article•
TL;DR: In this paper, a method for the study of resonant defect states by quantum capacitance spectrotcopy in HgCdTe was presented, where the C-V curves were measured by differential capacitance measurement with high sensitivity.
Abstract: This work presents a method for the study of resonant defect states by quantum capacitance spectrotcopy in HgCdTe. The C-V curves for P-type HgCdTe MIS structure samples with doping range from 3×10~(16) to 4×10~(17)cm~(-3) have been measured by differential capacitance measurement with high sensitivity. An additional peak appearing in the region below the threshold of inversion for the samples witn doping concentration of 1×10~(17)cm~(-3) is. observed. It is attributed to a resonant defect level located at 45meV above the conduction band edge. It is supposed that the measured resonant defect states are produced by oxygen impurities substituting for mercury vacancies.
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