scispace - formally typeset
Search or ask a question
Topic

Quantum capacitance

About: Quantum capacitance is a research topic. Over the lifetime, 954 publications have been published within this topic receiving 24165 citations.


Papers
More filters
Proceedings ArticleDOI
01 Jan 2013
TL;DR: The working principles of the hot-electron graphene base transistor for analog terahertz operation have been investigated by means of a self-consistent Schrodinger-Polsson solver code and it is shown that the cutoff frequency does not depend on the quantum capacitance of the graphene layer, which severely affects the intrinsic voltage gain.
Abstract: The working principles of the hot-electron graphene base transistor (GBT) for analog terahertz operation have been investigated by means of a self-consistent Schrodinger-Polsson solver code. Its regions of operation are defined and discussed. With the help of a small-signal model, it is shown that the cutoff frequency does not depend on the quantum capacitance of the graphene layer, which on the contrary severely affects the intrinsic voltage gain, and that terahertz operation is possible.

5 citations

Journal ArticleDOI
TL;DR: This study reveals the key feature of plasma waves in decorated/nanometric graphene FETs, and paves the way to tailor plasma band-engineering and expand its application in both terahertz and mid-infrared regions.
Abstract: Plasma waves in graphene field-effect transistors (FETs) and nano-patterned graphene sheets have emerged as very promising candidates for potential terahertz and infrared applications in myriad areas including remote sensing, biomedical science, military, and many other fields with their electrical tunability and strong interaction with light. In this work, we study the excitations and propagation properties of plasma waves in nanometric graphene FETs down to the scaling limit. Due to the quantum-capacitance effect, the plasma wave exhibits strong correlation with the distribution of density of states (DOS). It is indicated that the electrically tunable plasma resonance has a power-dependent V0.8TG relation on the gate voltage, which originates from the linear dependence of density of states (DOS) on the energy in pristine graphene, in striking difference to those dominated by classical capacitance with only V0.5TG dependence. The results of different transistor sizes indicate the potential application of nanometric graphene FETs in highly-efficient electro-optic modulation or detection of terahertz or infrared radiation. In addition, we highlight the perspectives of plasma resonance excitation in probing the many-body interaction and quantum matter state in strong correlation electron systems. This study reveals the key feature of plasma waves in decorated/nanometric graphene FETs, and paves the way to tailor plasma band-engineering and expand its application in both terahertz and mid-infrared regions.

5 citations

Journal ArticleDOI
TL;DR: In this article, it was shown that the electron transfer rate of a diffusionless heterogeneous electrochemical reaction is a function of the quantum capacitance of the electron spin and redox state degeneracy.

5 citations

Proceedings ArticleDOI
01 Sep 2013
TL;DR: Low-temperature measurements show a quantum oscillatory behavior of mobility revealing the electron confinement in 1D subbands structure of nanowires for temperature below 50K.
Abstract: This paper describes low-field electron transport in nanowire FETs with high-k/metal gate fabricated on 300 mm SOI and strained-SOI substrates. We studied the temperature and size dependences of gate-channel capacitance (C Gc ) and effective mobility (μEFF) down to 8 nm width. We show that the electron mobility is strongly reduced for sub-10 nm widths. Low-temperature measurements show a quantum oscillatory behavior of mobility revealing the electron confinement in 1D subbands structure of nanowires for temperature below 50K.

5 citations

Proceedings ArticleDOI
10 Apr 2013
TL;DR: Close-form models for computing transfer function of single-layer GNR interconnects are presented and closely match with data generated from simulations as well as that in the previously published literature.
Abstract: Carbon based interconnects have shown immense potential as a candidate to replace traditional copper interconnects for on-chip applications. In that, 2D Graphene Nanoribbon (GNR) interconnects offer superior electrical properties owing to larger mean free paths of electrons and better current carrying capabilities. Single-layer GNR interconnects can be considered as the simplest form of planar carbon-based interconnects for on-chip applications. In this paper, we present closed-form models for computing transfer function of single-layer GNR interconnects. Further, we present the transient analysis of these interconnects, in that we report analytical solutions for 50% delay time, 90% rise time and energy dissipation. The proposed models exhibit excellent accuracy when compared to simulated data while providing physical insights into the effect of quantum capacitance on 50% delay and energy estimation. The proposed models are highly accurate, in that they closely match with data generated from simulations as well as that in the previously published literature.

5 citations


Network Information
Related Topics (5)
Silicon
196K papers, 3M citations
85% related
Quantum dot
76.7K papers, 1.9M citations
85% related
Band gap
86.8K papers, 2.2M citations
85% related
Graphene
144.5K papers, 4.9M citations
83% related
Thin film
275.5K papers, 4.5M citations
83% related
Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202331
202238
202162
202062
201965
201858