Topic
Quantum capacitance
About: Quantum capacitance is a research topic. Over the lifetime, 954 publications have been published within this topic receiving 24165 citations.
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TL;DR: In this article, a physics-based model for the surface potential and drain current for monolayer transition metal dichalcogenide (TMD) field effect transistor is presented.
Abstract: A physics-based model for the surface potential and drain current for monolayer transition metal dichalcogenide (TMD) field-effect transistor is presented. Taking into account the two-dimensional (2D) density-of-states of the atomic layer thick TMD and its impact on the quantum capacitance, a model for the surface potential is presented. Next, considering a drift-diffusion mechanism for the carrier transport along the monolayer TMD, an explicit expression for the drain current has been derived. The model has been benchmarked with a measured prototype transistor. Based on the proposed model, the device design window targeting low-power applications is discussed.
82 citations
TL;DR: In this paper, the influence of Al, B, N and P doping, monovacancy and multilayer graphene structures on stability, electronic structures and quantum capacitance, by applying density functional theory calculations.
82 citations
01 Dec 2008
TL;DR: In this paper, a ballistic mean free path of Lball = 300 +mn100 nm at room-temperature for a carrier concentration of ~1012 cm-2 and a substantial series resistance of around 300 Omega mum has to be taken into account.
Abstract: The field-effect mobility of graphene devices is discussed. We argue that the graphene ballistic mean free path, Lball can only be extracted by taking into account both, the electrical characteristics and the channel length dependent mobility. In doing so we find a ballistic mean free path of Lball=300plusmn100 nm at room-temperature for a carrier concentration of ~1012 cm-2 and that a substantial series resistance of around 300 Omega mum has to be taken into account. Furthermore, we demonstrate first quantum capacitance measurements on single-layer graphene devices.
80 citations
TL;DR: In this article, a physics-based compact model for 2D field effect transistors (FETs) based on monolayer semiconductors such as MoS2 is presented.
Abstract: We present a physics-based compact model for two-dimensional (2D) field-effect transistors (FETs) based on monolayer semiconductors such as MoS2 A semi-classical transport approach is appropriate for the 2D channel, enabling simplified analytical expressions for the drain current In addition to intrinsic FET behavior, the model includes contact resistance, traps and impurities, quantum capacitance, fringing fields, high-field velocity saturation, and self-heating, the latter being found to play an important role The model is calibrated with state-of-the-art experimental data for n- and p-type 2D-FETs, and it can be used to analyze device properties for sub-100 nm gate lengths Using the experimental fit, we demonstrate the feasibility of circuit simulations using properly scaled devices The complete model is implemented in SPICE-compatible Verilog-A, and a downloadable version is freely available at the nanoHUBorg
80 citations
TL;DR: In this paper, the density of states exhibits a pronounced electron-hole asymmetry that increases linearly with energy and yields t � ≈− 0.3 eV ±15%, in agreement with the high end of theoretical values.
Abstract: the highest theoretical values. Here, we report dedicated measurements of the density of states in graphene by using high-quality capacitance devices. The density of states exhibits a pronounced electron-hole asymmetry that increases linearly with energy. This behavior yields t � ≈− 0.3 eV ±15%, in agreement with the high end of
78 citations