Topic
Quantum capacitance
About: Quantum capacitance is a research topic. Over the lifetime, 954 publications have been published within this topic receiving 24165 citations.
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01 Jul 2015TL;DR: In this paper, the geometry-dependent resonant frequencies (f 0 ) and unloaded Q-factors (Q u ) of the multilayer graphene ribbon (GR) based resonators are investigated with the equivalent single conductor (ESC) model.
Abstract: Graphene has been proved to be one of the promising candidate materials for high-frequency applications. The multilayer graphene ribbon (GR) based resonators are proposed and characterized in this work. The geometry-dependent resonant frequencies (f 0 ) and unloaded Q-factors (Q u ) of the GR-based resonators are investigated with the equivalent single conductor (ESC) model. It is found that by intercalation doping with AsF 5 , the graphene resonators can provide a high Q u of 80.6 at f 0 =793.1 GHz, superior to the copper and neutral graphene based ones.
3 citations
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TL;DR: In this article, a metal-insulator-semiconductor (MIS) capacitor was fabricated to confirm negative quantum capacitance (NQC) in a three-dimensional topological insulator.
Abstract: As a three-dimensional topological insulator (TI), bismuth telluride (Bi2Te3) has two-dimensional electron gas on its surface where negative quantum capacitance (NQC) can exist at a specific biasing condition. In order to experimentally confirm NQC in a TI, a metal–insulator–semiconductor (MIS) capacitor (i.e., metal–Bi2Te3–SiO2–silicon) is fabricated. The capacitance–voltage measurement of the MIS capacitor at 300 K shows that as the depletion capacitance in silicon decreases, the total capacitance of the MIS capacitor, which consists of two capacitors connected in series (i.e., insulator capacitor and depletion capacitor), increases in the depletion region at a frequency of 50 kHz. The amplified capacitance indicates the existence of NQC on the surface of the TI, and it originates from the strongly correlated electron system. The NQC of the TI opens avenues for sub-60-mV/decade steep switching silicon devices.
3 citations
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TL;DR: In this paper, a 14 nm carbon nanotube field effect transistor (CNTFET) model has been proposed to operate in high frequency performance, where quantum capacitance and electrostatic capacitance were used to enhance the mode of nanotubes.
3 citations
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26 Mar 2014
TL;DR: In this article, a high-mobility gated epitaxial graphene device is used for transport spectroscopy that exploits interplay between interface-state capacitance and graphene quantum capacitance reflecting the Dirac cone.
Abstract: What distinguishes graphene from conventional two-dimensional systems is its relativistic energy band structure referred to as the Dirac cone. Using a high-mobility gated epitaxial graphene device, we report transport spectroscopy that exploits interplay between interface-state capacitance and graphene quantum capacitance reflecting the Dirac cone [1]. This technique enables us to map out the energy structure of the relativistic graphene Landau levels (LLs) and thus to deduce disorder-induced LL broadening with simple transport measurements.
3 citations
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TL;DR: In this article, the perfect capacitive character of Corbino samples in the quantum Hall effect regime is shown, and a vanishing conductance and an electrochemical capacitance which depends on the density of states of 1D channels are measured.
Abstract: In a two dimensional electron gas, low energy transport in presence of a magnetic field occurs in chiral 1D channels located on the edge of the sample. In the AC description of quantum transport, the emittance determines the amplitude of the imaginary part of the admittance, whose sign and physical meaning are determined by the sample topology: a Hall bar is inductive while a Corbino ring is capacitive. In this article, the perfect capacitive character of Corbino samples in the quantum Hall effect regime is shown. A vanishing conductance and an electrochemical capacitance which depends on the density of states of 1D channels are measured. Our samples have no gate, neither on the side nor on the top, and the inner capacitances are measured. The transit time of electrons across the device is obtained and the drift velocity of carriers is deduced.
3 citations