Topic
Quantum capacitance
About: Quantum capacitance is a research topic. Over the lifetime, 954 publications have been published within this topic receiving 24165 citations.
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TL;DR: In this article, the classical and quantum capacitances for a Fabry-Perot interferometer operating in the integer quantized Hall regime were calculated using self-consistent calculations and the conditions to observe Aharonov-Bohm and Coulomb Blockade effects reflected in conductance oscillations.
Abstract: In this work, the classical and the quantum capacitances are calculated for a Fabry-Perot interferometer operating in the integer quantized Hall regime. We first consider a rotationally symmetric electrostatic confinement potential and obtain the widths and the spatial distribution of the insulating (incompressible) circular strips using a charge density profile stemming from self-consistent calculations. Modelling the electrical circuit of capacitors composed of metallic gates and incompressible/compressible strips, we investigate the conditions to observe Aharonov-Bohm (quantum mechanical phase dependent) and Coulomb Blockade (capacitive coupling dependent) effects reflected in conductance oscillations. In a last step, we solve the Schrodinger and the Poisson equations self-consistently in a numerical manner taking into account realistic experimental geometries. We find that, describing the conductance oscillations either by Aharanov-Bohm or Coulomb Blockade strongly depends on sample properties also other than size, therefore, determining the origin of these oscillations requires further experimental and theoretical investigation.
2 citations
04 Oct 2012
TL;DR: In this paper, the effect of gate capacitance on varying oxide thickness for silicon MOSFET and CNTFET was analyzed and it was shown that in the nanometre regime quantum capacitance plays a major role in deciding the gate capacity.
Abstract: Carbon nanotube based FET devices are getting more and more importance today because of their high channel mobility and improved gate capacitance versus voltage characteristics. In this paper we compare and analyse the effect of gate capacitance on varying oxide thickness for silicon MOSTFET and CNTFET. It is seen that in nanometre regime quantum capacitance plays the major role in deciding the gate capacitance of a CNTFET and we find a favourable characteristics of decreasing gate capacitance with the decrease in the oxide thickness which is impossible to get in silicon MOSFET.
2 citations
21 May 2015
TL;DR: In this paper, a label free DNA hybridization detection method based on frequency readout was proposed where graphene is used as the sensing material and it showed that the mismatched and complementary DNA strands results in distinguished frequency range and the frequency output is almost linear with respect to concentration of DNA.
Abstract: Graphene is an atomic layer thin two dimensional material with unique electrical and mechanical properties. Due to its high sensitivity, high conductivity, high carrier mobility, low intrinsic noises and high signal to noise ratio, it is being used in various sensing application. DNA Hybridization sensing is a key tool for genetic research as well as for detection of deadly diseases like Cancer, Hepatitis B and other complex hereditary diseases. There are various methods of DNA hybridization detection. One of the label free DNA hybridization detection methods is frequency readout. In this paper graphene quantum capacitance based frequency readout for label free DNA hybridization detection is proposed where graphene is used as the sensing material. This work shows that the mismatched and complementary DNA strands results in distinguished frequency range and the frequency output is almost linear with respect to concentration of DNA.
2 citations
TL;DR: In this article, the authors investigated the inversion charge characteristics and quantum-capacitance induced inversion loss for negative capacitance FinFETs using theoretical calculation corroborated with numerical simulation.
Abstract: This paper investigates the inversion charge characteristics and quantum-capacitance induced inversion charge loss for In
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Ga
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As negative-capacitance FinFETs (NC-FinFETs) using theoretical calculation corroborated with numerical simulation. Our study indicates that, the boost of inversion charges due to negative capacitance increases with increasing remnant polarization Pr. In addition, the inversion charge boosting for the In
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Ga
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As device is significantly larger than that of the Si (110) device due to the step-like inversion capacitance characteristic stemming from the 2D density-of-states of the In
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Ga
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As device. In other words, the quantum-capacitance induced inversion-charge loss for III-V channel can be mitigated in NCFETs.
2 citations
TL;DR: In this article, the effects of Majorana bound states on the ac response of a quantum resistor-capacitor circuit were investigated, where two ends are tunnel-coupled to a lead and a spinless quantum dot, respectively.
2 citations