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Quantum capacitance

About: Quantum capacitance is a research topic. Over the lifetime, 954 publications have been published within this topic receiving 24165 citations.


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Journal ArticleDOI
TL;DR: Arash Hazeghi, Joseph A. Sulpizio, Georgi Diankov, David Goldhaber-Gordon, and H. S. Philip Wong as discussed by the authors have proposed a method to solve the problem of low-dimensional space.
Abstract: Arash Hazeghi, Joseph A. Sulpizio, Georgi Diankov, David Goldhaber-Gordon, and H. S. Philip Wong Citation: Rev. Sci. Instrum. 82, 129901 (2011); doi: 10.1063/1.3665097 View online: http://dx.doi.org/10.1063/1.3665097 View Table of Contents: http://rsi.aip.org/resource/1/RSINAK/v82/i12 Published by the AIP Publishing LLC.

2 citations

Journal ArticleDOI
TL;DR: In this paper, with and without disorder grapheme nanoribbon (GNR) channel is considered for different electrical parameters (Current, Number of carriers at steady state, Density of states, Quantum Capacitance).

2 citations

Journal ArticleDOI
TL;DR: In this article, the authors demonstrate a contactless measurement scheme that capacitively couples a device to a superconducting microwave resonator, and both quantum capacitance and charge-relaxation resistance can be inferred from a single measurement, and residual doping and the Fermi velocity can be quantitatively deduced.
Abstract: The electrical contacts needed for conventional probing of a graphene-based device can mask the very properties to be measured. The authors demonstrate a contactless measurement scheme that capacitively couples a device to a superconducting microwave resonator. Both quantum capacitance and charge-relaxation resistance can be inferred from a single measurement, and residual doping and the Fermi velocity can be quantitatively deduced. This technique offers fast, sensitive, noninvasive measurement of graphene nanocircuits, or other systems for which ohmic contacts are difficult to obtain.

2 citations

Proceedings ArticleDOI
26 Oct 2015
TL;DR: In this article, the impact of quantum mechanical effects on the device performance of n-type silicon nanowire transistors (NWTs) is revealed, and the authors present results for two Si NWTs with circular and elliptical cross-section.
Abstract: This work reveals the impact of quantum mechanical effects on the device performancce of n-type silicon nanowire transistors (NWT). Here we present results for two Si NWTs with circular and elliptical cross-section. Additionally we designed both devices to have identical cross-section in order to provide fair comparison. Also we extended our discussions by reporting devices with five different gate lengths for both circular and elliptical nanowires. Our calculations gave us the opportunity to establish a link between the charge distribution in the channel, gate capacitance, drain induced barrier lowering (DIBL) and the sub-threshold slope (SS). We also performed two types of calculations considering two different theoretical approaches. First one is based on drift-diffusion (DD) without quantum correction. The second one is constructed on quantum mechanical (QM) description of the mobile charge distribution in the channel. The QM methodology is based on Schrodinger equation. More importantly, in this work showw that capturing the QM effects is mandatory for nanowires with such ultra-scale dimensions.

2 citations

Journal ArticleDOI
TL;DR: In this article, a quantum transport model for field-effect transistors based on graphene electrodes and CNT channels was used to explain the experimentally observed low on currents. But the authors did not consider the quantum properties of CNT/graphene hybrid systems in such devices.
Abstract: All-carbon field-effect transistors, which combine carbon nanotubes and graphene hold great promise for many applications such as digital logic devices and single-photon emitters. However, the understanding of the physical properties of carbon nanotube (CNT)/graphene hybrid systems in such devices remained limited. In this combined experimental and theoretical study, we use a quantum transport model for field-effect transistors based on graphene electrodes and CNT channels to explain the experimentally observed low on currents. We find that large graphene/CNT spacing and short contact lengths limit the device performance. We have also elucidated in this work the experimentally observed ambipolar transport behavior caused by the flat conduction- and valence-bands and describe non-ideal gate-control of the contacts and channel region by the quantum capacitance of graphene and the carbon nanotube. We hope that our insights will accelerate the design of efficient all-carbon field-effect transistors.

2 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202331
202238
202162
202062
201965
201858