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Quantum capacitance

About: Quantum capacitance is a research topic. Over the lifetime, 954 publications have been published within this topic receiving 24165 citations.


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Journal ArticleDOI
TL;DR: In this article, the gate current of metal-oxide-semiconductor (MOS) devices with graphene as the gate electrode, 5 or 10 nm thick silicon dioxide as the insulator, and silicon as the semiconductor substrate was investigated.
Abstract: We fabricate and characterize metal-oxide-semiconductor (MOS) devices with graphene as the gate electrode, 5 or 10 nm thick silicon dioxide as the insulator, and silicon as the semiconductor substrate. We find that Fowler-Nordheim tunneling dominates the gate current for the 10 nm oxide device. We also study the temperature dependence of the tunneling current in these devices in the range 77 to 300 K and extract the effective tunneling barrier height as a function of temperature for the 10 nm oxide device. Furthermore, by performing high frequency capacitance-voltage measurements, we observe a local capacitance minimum under accumulation, particularly for the 5 nm oxide device. By fitting the data using numerical simulations based on the modified density of states of graphene in the presence of charged impurities, we show that this local minimum results from the quantum capacitance of graphene. These results provide important insights for the heterogeneous integration of graphene into conventional silicon technology.

1 citations

Journal ArticleDOI
01 Jan 2022-FlatChem
TL;DR: In this paper , a comprehensive approach to calculate quantum capacitance of nanoscale capacitors as a function of applied potential difference to have resemblance to actual device operating conditions was introduced for different elementary materials and geometries for the soundness of the approach.

1 citations

Proceedings ArticleDOI
23 Jun 2008
TL;DR: In this article, the degenerate carrier density and quantum capacitance of carbon nanotube (CNT) devices were analyzed. But the authors focused on analytical transport and compact modeling of CNT devices, and for evaluating diameter dependence on electrical performance.
Abstract: Analytical equations are developed for the degenerate carrier density and quantum capacitance with good agreement to numerical computation and experimental data. These results lay the foundation for analytical transport and compact modeling of carbon nanotube (CNT) devices, and for evaluating diameter dependence on electrical performance.

1 citations

Proceedings ArticleDOI
29 Jul 2020
TL;DR: In this paper, transport properties of Osmium-passivated armchair graphene nanoribbons (AGNRs) have been explored for applications in nanoscale interconnects.
Abstract: In this paper, transport properties of Osmium (Os)-passivated armchair graphene nanoribbons (AGNRs) have been explored for applications in nanoscale interconnects. Os has been used for passivation in place of Hydrogen (H). In general, H-passivation is used to reduce the edge scattering in AGNRs. However, this increases the bandgap of the structure. In our study, it is found that Os-passivation reduces the edge scattering with improvement in metallicity of AGNRs, which makes it suitable for future nanoscale interconnects. We have extracted key parameters, such as transmission spectrum, I-V characteristics, number of conduction channels, Fermi velocity, kinetic inductance and quantum capacitance. We have compared our results with Fe-passivated AGNRs. In case of Os-passivated AGNRs, up to eight conduction channels are seen that result in higher currents of up to 4x as compared to Fe-passivated AGNRs.

1 citations

Posted Content
TL;DR: In this paper, the authors calculate the admittance of a two-dimensional quantum point contact (QPC) using a Boltzman-like kinetic equation derived for a partial Wigner distribution function in an effective potential.
Abstract: We calculate the admittance of a two-dimensional quantum point contact (QPC) using a Boltzman-like kinetic equation derived for a partial Wigner distribution function in an effective potential We show that this approach leads to the known stepwise behavior of the admittance as a function of the gate voltage The emittance contains both a quantum inductance determined by the harmonic mean of the velocities for the propagating electron modes and a quantum capacitance determined by the reflected modes

1 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202331
202238
202162
202062
201965
201858