Quantum capacitance

About: Quantum capacitance is a research topic. Over the lifetime, 954 publications have been published within this topic receiving 24165 citations.

Electrothermal investigation on through silicon multi-walled carbon nanotube via interconnects

Abstract: This paper presents hybrid analysis of through silicon multi-walled carbon nanotube vias A set of equivalent lumped-element circuit models for two through silicon multi-walled carbon nanotube via (TS-MWCNTV) interconnects are proposed, with quantum effect treated appropriately The methods for characterizing all frequency- and temperature-dependent RLCG parameters of a couple of TS-MWCNTVs are then given, including their effective capacitance, effective conductance, and characteristic impedance Further, hybrid effects of frequency, as well as temperature on the conductance of open structure is examined Also, the time delay of the TS-MWCNTV is studied

Interaction of Co3O4 Nanocube with Graphene and Reduced Graphene Oxide: Adhesion and Quantum Capacitance

Abstract: The composites on the base of Co3O4 and graphene are in demand in the field of portable, flexible energy storage devices due to their small size, lightweight, big specific capacitance, good cycle stability and appropriate capacitance retention. The synthesis of this material always starts from the treatment of graphene oxide, so as a result, experimenters receive Co3O4 nanocubes incorporated into reduced graphene oxide indicates the presence of different oxygen-containing groups in the compound. This fact may limit the advantages of the considered material. Our theoretical quantum chemical calculations show that the process of Co3O4 incorporation between reduced graphene oxide layers is more energetically favorable in comparison to pure graphene. However, the win in the quantum capacitance in the case of pure graphene is in the range of 300–500 F/g in dependence on the applied voltage. The obtained result may indicate the need for modification of the current methods of graphene/Co3O4 synthesis to improve its application in supercapacitors and lithium-ion batteries.

Progress in the implementation of the capacitance standard based on single-electron counting at PTB

Abstract: We report on the progress achieved at PTB in setting up an experiment for the realization of a quantum capacitance standard based on the controlled charging of a capacitor by single electrons. An experiment of this kind was suggested and first performed by NIST. In order to enhance the accuracy of the experiment, we use a new kind of single-electron pump and a capacitor with improved design features. The main components for the experiment are presented and discussed.

The density of states of graphene underneath a metal electrode and its correlation with the contact resistivity

Abstract: The density of states (DOS) of graphene underneath a metal is estimated through a quantum capacitance measurement of the metal/graphene/SiO2/n+-Si contact structure fabricated by a resist-free metal deposition process. Graphene underneath Au maintains a linear DOS - energy relationship except near the Dirac point, whereas the DOS of graphene underneath Ni is broken and largely enhanced around the Dirac point, resulting in only a slight modulation of the Fermi energy. Moreover, the DOS of graphene in the contact structure is correlated with the contact resistivity measured using devices fabricated by the resist-free process.