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Quantum capacitance
About: Quantum capacitance is a research topic. Over the lifetime, 954 publications have been published within this topic receiving 24165 citations.
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IBM1
TL;DR: In this paper, a model was developed which can more accurately represent dynamic transport in combinations of one dimensional ballistic electron waveguides such as carbon nanotubes, thus avoiding the confusing quantum capacitance and conductance terms.
Abstract: A model has been developed which can more accurately represent dynamic transport in combinations of one dimensional ballistic electron waveguides such as carbon nanotubes. The model parameters are just the Fermi velocity and conductance of the electron gas , thus avoiding the confusing quantum capacitance and conductance terms. Logical extensions of this model should permit design and simulation of high frequency amplifiers in these exciting new materials.
08 Jul 2015
TL;DR: The final transmission line model is modified taking into account new terms for the line matrix parameters, directly related to the tunneling in the terahertz range, with reference to two examples of carbon nano-interconnects.
Abstract: This paper deals with the possible use of carbon-based nano-interconnects for terahertz applications. The electrodynamics of nano-interconnects, either made of carbon nanotubes or graphene nanoribbons, may be conveniently described by means of a semi-classical transport model, based on the modified Boltzmann transport equation. In this paper, this model is revised in order to include the effects of tunneling between adjacent carbon nanotubes or graphene layers. The final transmission line model is modified taking into account new terms for the line matrix parameters, directly related to the tunneling. Such terms introduce resonances and dispersion which potentially reduce the applicability of such interconnects. The effects of tunneling in the terahertz range is investigated, with reference to two examples of carbon nano-interconnects.
24 May 1999
TL;DR: In this paper, a reference resistor and a 10 nF capacitor are linked by means of a quadrature bridge based on a commercial two-phase generator, and the reference resistor can be measured with a standard uncertainty of less than 3 parts in 10/sup 5/ in the frequency range from 400 Hz to 5 kHz.
Abstract: A method is described which utilizes a 12906.4 /spl Omega/ resistor as a reference standard for capacitance calibrations. DC value of this resistor being obtained by comparing it against a quantum Hall effect device, its frequency dependence is measured by 1:1 comparison against a resistor having calculable frequency performance. Subsequently, the reference resistor and a 10 nF capacitor are linked by means of a quadrature bridge based on a commercial two-phase generator. The 10 nF capacitor, in turn, serves as a reference standard for calibration of capacitors of lower values by means of a four terminal-pair transformer bridge. By means of the quadrature bridge, capacitance can be measured with a standard uncertainty of less than 3 parts in 10/sup 5/ in the frequency range from 400 Hz to 5 kHz at the 10 nF level.
TL;DR: In this article, the capacitance-voltage characteristics of a metal-semiconductor-metal structure with an embedded two-dimensional electron system are reported, which functions based on a quantum capacitance, which is activated by local illumination.
Abstract: Capacitance-Voltage characteristics of a metal-semiconductor-metal structure with an embedded two-dimensional electron system are reported. The device functions based on a quantum capacitance, which is activated by local illumination. The giant sensitivity to light and voltage makes this device a candidate for capacitive-based photodetection.