Quantum capacitance

About: Quantum capacitance is a research topic. Over the lifetime, 954 publications have been published within this topic receiving 24165 citations.

Very Large Current Modulation in Vertical Heterostructure Graphene/hBN Transistors

Abstract: In this paper, we investigate the electrical behavior of transistors based on a vertical graphene-hexagonal boron nitride (hBN) heterostructure, using atomistic multiphysics simulations based on density-functional theory and non-equilibrium Green's function formalism. We show that the hBN current-blocking layer is effective and allows modulation of the current by five orders of magnitude, confirming experimental results. We also highlight - through accurate numerical calculations and simplified analytical modeling - some intrinsic limitations of vertical heterostructure transistors. We show that the overlap between gate contacts and source/drain leads screens the electric field induced by the gates and is responsible for the excessive degradation of the sub-threshold swing, the ION/IOFF ratio, and the cut-off frequency.

Assessment of high-frequency performance limits of graphene field-effect transistors

Abstract: High frequency performance limits of graphene field-effect transistors (FETs) down to a channel length of 20 nm have been examined by using self-consistent quantum simulations. The results indicate that although Klein band-to-band tunneling is significant for sub-100 nm graphene FETs, it is possible to achieve a good transconductance and ballistic on-off ratio larger than 3 even at a channel length of 20 nm. At a channel length of 20 nm, the intrinsic cut-off frequency remains at a few THz for various gate insulator thickness values, but a thin gate insulator is necessary for a good transconductance and smaller degradation of cut-off frequency in the presence of parasitic capacitance. The intrinsic cut-off frequency is close to the LC characteristic frequency set by graphene kinetic inductance (L) and quantum capacitance (C), which is about 100 GHz·μm divided by the gate length. Open image in new window

Improving the Quantum Capacitance of Graphene-Based Supercapacitors by the Doping and Co-Doping: First-Principles Calculations.

Abstract: We explore the stability, electronic properties, and quantum capacitance of doped/co-doped graphene with B, N, P, and S atoms based on first-principles methods. B, N, P, and S atoms are strongly bonded with graphene, and all of the relaxed systems exhibit metallic behavior. While graphene with high surface area can enhance the double-layer capacitance, its low quantum capacitance limits its application in supercapacitors. This is a direct result of the limited density of states near the Dirac point in pristine graphene. We find that the triple N and S doping with single vacancy exhibits a relatively stable structure and high quantum capacitance. It is proposed that they could be used as ideal electrode materials for symmetry supercapacitors. The advantages of some co-doped graphene systems have been demonstrated by calculating quantum capacitance. We find that the N/S and N/P co-doped graphene with single vacancy is suitable for asymmetric supercapacitors. The enhanced quantum capacitance contributes to the formation of localized states near the Dirac point and/or Fermi-level shifts by introducing the dopant and vacancy complex.

Effects of structural disorder and surface chemistry on electric conductivity and capacitance of porous carbon electrodes

Abstract: This article reports on changes in electric double layer charge storage capacity as a function of surface chemistry and graphitic structure of porous carbon electrodes. By subjecting 20 nm to 2.0 μm sized carbide-derived carbons (CDCs) synthesized at 800 °C to high-temperature vacuum annealing at 700–1800 °C, we produce three-dimensional internal surface architectures with similar pore sizes and volumes but divergent surface chemistry and wall graphitization. Annealing increases carbon ordering and selectively removes functional groups, and both transformations affect conductivity and wettability. Contrary to an expected increase in gravimetric capacitance, we demonstrate no increases in charge storage despite increased conductivity and pore accessibility. At the same time, annealing improves the charge/discharge rates in EMIm-TFSI ionic liquid electrolyte. The annealing process eliminates faradaic reactions that limit the voltage window, but potentially accelerates catalytic breakdown of the ions themselves. We therefore corroborate the theory that surface groups and defects in the graphitic structure act as dopants that allow facile movement of ions into pores, improve screening in the superionic state, and affect the quantum capacitance contribution from the carbon structure.

Signal Propagation in Carbon Nanotubes of Arbitrary Chirality

Abstract: In carbon nanotubes (CNTs) with large radii, either metallic or semiconducting, several subbands contribute to the electrical conduction, while in metallic nonarmchair nanotubes with small radii the wall curvature induces a large energy gap. In this paper, we propose a model for the signal propagation along single wall CNTs (SWCNTs) of arbitrary chirality, at microwave through terahertz frequencies, which takes into account both these characteristics in a self-consistent way. We first study an SWCNT, disregarding the wall curvature, in the frame of a semiclassical treatment based on the Boltzmann equation in the momentum-independent relaxation time approximation. It allows expressing the longitudinal dynamic conductivity in terms of the number of effective conducting channels. Next, we study the behavior of this number as the nanotube radius varies and its relation with the kinetic inductance and quantum capacitance. Furthermore, we show that the effects of the spatial dispersion are negligible in the collision dominated regimes, whereas they may be important in the collisionless regimes, giving rise to sound waves propagating with the Fermi velocity. Then, we study the effects on the electron transport of the terahertz quantum transition induced by the wall curvature by using a quantum kinetic approach. The nanotube curvature modifies the kinetic inductance and gives arise to an additional RLC branch in the equivalent circuit, related to the terahertz quantum transition. The proposed model can be used effectively for analyzing the signal propagation in complex structures composed of SWCNTs with different chirality, such as bundles of SWCNTs and multiwall CNTs, providing that the tunneling between adjacent shells may be disregarded.