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Quantum capacitance
About: Quantum capacitance is a research topic. Over the lifetime, 954 publications have been published within this topic receiving 24165 citations.
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TL;DR: In this paper, a measurement method using an LC-circuit provides high sensitivity to small capacitance changes and hence allows the observation of the quantum part of the capacitance in top-gated graphene sheets.
Abstract: We report capacitance measurements in top-gated graphene sheets as a function of charge carrier density. A measurement method using an LC-circuit provides high sensitivity to small capacitance changes and hence allows the observation of the quantum part of the capacitance. The extracted density of states has a finite value of 1◊10 17 m 2 eV 1 in the vicinity of the Dirac point, which is in contrast to the theoretical prediction for ideal graphene. We attribute this discrepancy to fluctuations of the electrostatic potential with a typical amplitude of 100meV in our device.
47 citations
TL;DR: In this paper, the authors performed the differential capacitance and in situ electrochemical Raman spectroscopic measurement of single layer graphene in aqueous solutions to study the origin of the interfacial capacitance of graphene.
47 citations
TL;DR: In this paper, a comparative supercapacitor performance of the transition metal (Co, Ni and Mn) diselenides nanostructures assembled in a symmetric electrode configuration was investigated.
47 citations
TL;DR: In this paper, a SPICE-like graphene field effect transistor (GFET) model with an improved carrier mobility analysis is presented, which considers the mobility difference between the electrons and the holes in graphene, as well as the mobility variation against the carrier density.
Abstract: This paper presents a SPICE-like graphene field-effect transistor (GFET) model with an improved carrier mobility analysis. The model considers the mobility difference between the electrons and the holes in graphene, as well as the mobility variation against the carrier density. Closed-form analytical solutions have been derived, and the model has been implemented in Verilog-A language. This was compiled into an advanced design system. The proposed model gives excellent agreement between the simulation results and the measurement data for both the hole and electron conduction simultaneously. The model is suitable for the exploration of GFET-based applications, especially for those using the ambipolar transfer property of GFET.
47 citations
TL;DR: The capacitance measured from a single nanowire device corresponds to ~140 μF cm(-2), exceeding previous reported values for metal-insulator-metal micro-capacitors and is more than one order of magnitude higher than what is predicted by classical electrostatics.
Abstract: Building entire multiple-component devices on single nanowires is a promising strategy for miniaturizing electronic applications. Here we demonstrate a single nanowire capacitor with a coaxial asymmetric Cu-Cu 2o-C structure, fabricated using a two-step chemical reaction and vapour deposition method. The capacitance measured from a single nanowire device corresponds to ~140 µF cm − 2 , exceeding previous reported values for metal-insulator-metal micro-capacitors and is more than one order of magnitude higher than what is predicted by classical electrostatics. Quantum mechanical calculations indicate that this unusually high capacitance may be attributed to a negative quantum capacitance of the dielectric-metal interface, enhanced significantly at the nanoscale.
47 citations