Topic
Quantum capacitance
About: Quantum capacitance is a research topic. Over the lifetime, 954 publications have been published within this topic receiving 24165 citations.
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TL;DR: In this paper, the authors presented the electronic structures and quantum capacitance for pristine δ-MnO2 with O vacancy employing density functional theory (DFT) simulations and showed that the defect structural design exhibited excellent electrocatalytic OER activity with lowest overpotential (η20, 300mV) and Tafel slope (71 mV/dec).
15 citations
TL;DR: In this article, the authors demonstrate that semiconducting carbon nanotubes can be used to implement a room temperature capacitance tunable via an external bias, i.e., a varactor, which is a key element in any communication system working up to a few terahertz.
Abstract: This paper demonstrates that semiconducting carbon nanotubes can be used to implement a room temperature capacitance tunable via an external bias, i.e., a varactor, which is a key element in any communication system working up to a few terahertz. The paper describes the implementation of two types of varactors based, respectively, on a single gated nanotube and on a biased array of carbon nanotubes. In the former case, the varactor is the density-of-states dependent quantum capacitance that can be tuned via a gate voltage due to the shift of the Fermi level. In the latter case, the varactor consists of a selectively biased brushlike carbon nanotube array with a capacitance tuned via attractive and repulsive electrostatic forces between different nanotubes of the array.
15 citations
TL;DR: In this article, a critical analysis of charge carrier statistics influenced by quantum capacitance is carried out in order to predict the electrical performance of a nanoscale metal-oxide-semiconductor field effect transistor (MOSFET) with a channel made of a monolayer tungsten diselenide (WSe2) two-dimensional (2D) crystal semiconductor.
Abstract: A critical analysis of charge carrier statistics influenced by quantum capacitance is carried out in order to predict the electrical performance of a nanoscale metal–oxide–semiconductor field-effect transistor (MOSFET) with a channel made of a monolayer tungsten diselenide (WSe2) two-dimensional (2D) crystal semiconductor. Since quantum capacitance originating from two-dimensional electron gas in a quantum well or an inversion layer does not completely screen the quasistatic electric field during applied gate voltage, the partial penetration of an external electric field through the 2D semiconductor channel will generate excess charge carriers; thus quantum capacitance will play an important role in determining the overall charge carrier density in the channel. Therefore, common methods used to extract charge carrier density in the channel for three-dimensional (3D) crystal semiconductors will yield inaccurate results when used for 2D crystal semiconductors. To address this issue, this study proposes a modified approach for extracting charge carrier density in WSe2-based 2D semiconductors by combining the appropriate carrier statistics with consideration of quantum capacitance. In addition, the study investigates the effect of interface traps on overall capacitance, which may influence the electrical performance of a nanoscale MOSFET with monolayer WSe2 as a channel material.
15 citations
TL;DR: In this article, the authors demonstrate wide-band capacitance measurements on a semiconductor double quantum dot (DQD) to study tunneling dynamics, by applying phase-tunable high-frequency signals independently to the DQD and a nearby quantum-point-contact charge detector.
Abstract: We propose and demonstrate wide-band capacitance measurements on a semiconductor double quantum dot (DQD) to study tunneling dynamics. By applying phase-tunable high-frequency signals independently to the DQD and a nearby quantum-point-contact charge detector, we successfully measure current proportional to the capacitance associated with the single-electron motion over a wide frequency range from Hz to a few tens of GHz. Analyzing the phase and the frequency dependence of the signal allows us to extract the characteristic tunneling rates. We show that, by applying this technique to the interdot tunnel coupling regime, quantum capacitance reflecting the strength of the quantum-mechanical coupling can be measured.
15 citations
01 Dec 2008
TL;DR: In this article, the quantum capacitances of individual metallic single walled carbon nanotubes and bundles of single-walled tubes were quantified using the Tomanaga Luttinger liquid model.
Abstract: Carbon nanotubes, especially the ones with diameters of the order of a few nanometers exhibit correlated electron transport and are best described using the Tomanaga Luttinger liquid model. Recently the TL model was used to create a convenient transmission line like phenomenological model for carbon nanotubes. In this paper, we have attempted to quantify the quantum capacitances of individual metallic single walled carbon nanotubes and bundles of single walled tubes. Quantum capacitances and values of the interaction parameter `g' are presented for small diameter metallic nanotubes while quantum capacitances are calculated for bundles of carbon nanotubes.
15 citations