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Quantum capacitance

About: Quantum capacitance is a research topic. Over the lifetime, 954 publications have been published within this topic receiving 24165 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, finite-element analysis modeling and characterization of quasi-ballistic electrical transport in semiconducting carbon nanotube field effect transistors, and fit experimental electrical transport data from both suspended and on-substrate single-walled carbon-nanotube transistors fabricated using chemical vapor deposition.
Abstract: We perform finite-element analysis modeling and characterization of quasi-ballistic electrical transport in semiconducting carbon nanotube field effect transistors, and fit experimental electrical transport data from both suspended and on-substrate single-walled carbon nanotube transistors fabricated using chemical vapor deposition. Previous studies have focused on modeling ballistic transport in carbon nanotube field effect transistors, but have ignored the spatial dependence of the resistance, voltage, and Fermi energy. These spatial variations play an important role in several high voltage effects that are particularly important in the quasi-ballistic transport regime where most current or near-term devices operate. We show the relationship between device geometry and pinch-off, current saturation, and channel length modulation in the quantum capacitance regime. Output resistance is found to increase with gate coupling efficiency with a power law behavior. This model can be used for the extraction of device properties from experimental data and as a design environment tool.

13 citations

Journal ArticleDOI
TL;DR: In this article, a mathematical model is developed predicting the behavior of gate capacitance with the nanoscale variation of barrier thickness in AlN/GaN MOSHEMTs and its effect on gate capacitances of AlInN/GAN and AlGaN/gaN MoshEMTs through TCAD simulations is compared analytically.
Abstract: A mathematical model is developed predicting the behavior of gate capacitance with the nanoscale variation of barrier thickness in AlN/GaN MOSHEMT and its effect on gate capacitances of AlInN/GaN and AlGaN/GaN MOSHEMTs through TCAD simulations is compared analytically. AlN/GaN and AlInN/GaN MOSHEMTs have an advantage of a significant decrease in gate capacitance up to 108 fF/μm2 with an increase in barrier thickness up to 10 nm as compared to conventional AlGaN/GaN MOSHEMT. This decrease in gate capacitance leads to improved RF performance and hence reduced propagation delay.

13 citations

Journal ArticleDOI
TL;DR: A compact model for semiconductor charge and quantum capacitance in III-V channel FETs is presented and is completely explicit and computationally efficient which makes it highly suitable for SPICE implementation.
Abstract: In this paper, we present a compact model for semiconductor charge and quantum capacitance in III-V channel FETs. With III-V being viewed as the most promising candidate for future technology node, a compact model is needed for their circuit simulation. The model presented in this paper addresses this need and is completely explicit and computationally efficient which makes it highly suitable for SPICE implementation. The proposed model is verified against the numerical solution of coupled Schrodinger–Poisson equation for FinFET with various channel thickness and effective mass.

13 citations

Journal ArticleDOI
TL;DR: In this article, the authors used pyrrolic-type nitrogen doping to demonstrate extremely high quantum capacitances for graphene, achieving an impressive 486.32 μ F/cm2 quantum capacitance at a pyrrorlic concentration of 6.38%.
Abstract: Despite having remarkable surface area (2630 m2/g for graphene), the graphene-based supercapacitors are still unable to attain the necessary energy density due to poor accessibility of surface area and low quantum capacitance. In this paper, we demonstrate an effective way to improve the quantum capacitance of graphene through plane wave density functional theory calculations. We used pyrrolic-type nitrogen doping to demonstrate extremely high quantum capacitances for graphene. An impressive 486.32 μ F/cm2 quantum capacitance has been observed at a pyrrolic concentration of 6.38%. Our calculations suggest that the quantum capacitance of graphene increases with the pyrrolic concentration. We have also investigated the impact of combinational pyrrolic defects on the quantum capacitance of graphene. We believe that the pyrrolic defects studied in this paper also help in improving the graphene surface area accessibility by the electrolytic ions.

13 citations

Journal ArticleDOI
TL;DR: In this paper, the electronic transport properties and dynamical parameters of zigzag silicene and germanene nanoribbons (ZZ-SiNR and ZZ-GeNR) are investigated and compared.

13 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202331
202238
202162
202062
201965
201858