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Quantum dot laser

About: Quantum dot laser is a research topic. Over the lifetime, 13735 publications have been published within this topic receiving 302127 citations.


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Journal ArticleDOI
TL;DR: In this paper, a new type of semiconductor laser is studied, in which injected carriers in the active region are quantum mechanically confined in two or three dimensions (2D or 3D), and the effects of such confinements on the lasing characteristics are analyzed.
Abstract: A new type of semiconductor laser is studied, in which injected carriers in the active region are quantum mechanically confined in two or three dimensions (2D or 3D). Effects of such confinements on the lasing characteristics are analyzed. Most important, the threshold current of such laser is predicted to be far less temperature sensitive than that of conventional lasers, reflecting the reduced dimensionality of electronic state. In the case of 3D‐QW laser, the temperature dependence is virtually eliminated. An experiment on 2D quantum well lasers is performed by placing a conventional laser in a strong magnetic field (30 T) and has demonstrated the predicted increase of T0 value from 144 to 313 °C.

3,069 citations

Journal ArticleDOI
13 Oct 2000-Science
TL;DR: In this article, the authors examined the competing dynamical processes involved in optical amplification and lasing in nanocrystal quantum dots and found that, despite a highly efficient intrinsic nonradiative Auger recombination, large optical gain can be developed at the wavelength of the emitting transition for close-packed solids of these dots.
Abstract: The development of optical gain in chemically synthesized semiconductor nanoparticles (nanocrystal quantum dots) has been intensely studied as the first step toward nanocrystal quantum dot lasers. We examined the competing dynamical processes involved in optical amplification and lasing in nanocrystal quantum dots and found that, despite a highly efficient intrinsic nonradiative Auger recombination, large optical gain can be developed at the wavelength of the emitting transition for close-packed solids of these dots. Narrowband stimulated emission with a pronounced gain threshold at wavelengths tunable with the size of the nanocrystal was observed, as expected from quantum confinement effects. These results unambiguously demonstrate the feasibility of nanocrystal quantum dot lasers.

2,535 citations

Book
01 Jan 1999
TL;DR: In this paper, the growth and structural characterisation of self-organized Quantum Dots are discussed. But they do not consider the model of ideal and real quantum Dots.
Abstract: Fabrication Techniques for Quantum Dots. Self-Organization Concepts on Crystal Surfaces. Growth and Structural Characterization of Self-Organized Quantum Dots. Modeling of Ideal and Real Quantum Dots. Electronic and Optical Properties. Electrical Properties. Photonic Devices. References. Index.

2,356 citations

Journal ArticleDOI
Charles H. Henry1
TL;DR: In this article, a theory of the spectral width of a single-mode semiconductor laser is presented and used to explain the recent measurements of Fleming and Mooradian on AlGaAs lasers.
Abstract: A theory of the spectral width of a single-mode semiconductor laser is presented and used to explain the recent measurements of Fleming and Mooradian on AlGaAs lasers. They found the linewidth to be inversely proportional to power and to have a value of 114 MHz at 1 mW per facet. This value is 30 times greater than can be explained by existing theories. The enhanced linewidth is attributed to the variation of the real refractive index n' with carrier density. Spontaneous emission induces phase and intensity changes in the laser field. The restoration of the laser to its steady-state intensity results in changes in the imaginary part of the refractive index \Delta n" . These changes are accompanied by changes in the real part of the refractive index \Delta n' , which cause additional phase fluctuations and line broadening. The linewidth enhancement is shown to be 1 + \alpha^{2} , where \alpha = \Delta n'/\Delta n" . A value of \alpha \approx 5.4 , needed to explain the observed linewidth, is close to the experimental values of a of 4.6 and 6.2.

2,293 citations

Journal Article
TL;DR: This work examined the competing dynamical processes involved in optical amplification and lasing in nanocrystal quantum dots and found that, despite a highly efficient intrinsic nonradiative Auger recombination, large optical gain can be developed at the wavelength of the emitting transition for close-packed solids of these dots.
Abstract: The development of optical gain in chemically synthesized semiconductor nanoparticles (nanocrystal quantum dots) has been intensely studied as the first step toward nanocrystal quantum dot lasers. We examined the competing dynamical processes involved in optical amplification and lasing in nanocrystal quantum dots and found that, despite a highly efficient intrinsic nonradiative Auger recombination, large optical gain can be developed at the wavelength of the emitting transition for close-packed solids of these dots. Narrowband stimulated emission with a pronounced gain threshold at wavelengths tunable with the size of the nanocrystal was observed, as expected from quantum confinement effects. These results unambiguously demonstrate the feasibility of nanocrystal quantum dot lasers.

2,098 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202346
2022110
2021120
2020114
2019144
2018171