Showing papers on "Quantum dot published in 1984"
TL;DR: In this article, the authors present theory and extended experimental results for the large shift in optical absorption in GaAs-AlGaAs quantum well structures with electric field perpendicular to the layers.
Abstract: We present theory and extended experimental results for the large shift in optical absorption in GaAs-AlGaAs quantum well structures with electric field perpendicular to the layers. In contrast to the Stark effect on atoms or on excitons in bulk semiconductors, the exciton resonances remain resolved even for shifts much larger than the zero-field binding energy and fields g 50 times the classical ionization field. The model explains these results as a consequence of the quantum confinement of carriers.
1,604 citations
TL;DR: In this paper, conductance and magnetoconductance measurements on narrow silicon inversion layers 40-200 nm wide, with mobilities of 1000-5000 cm 2 V · s at 2 K.
33 citations
TL;DR: The development of molecular-beam epitaxy and metal-organic chemical vapor deposition techniques have made preparation of these structures possible as discussed by the authors, leading to new electronic phenomena such as quantum well injection lasers, modulation-doped heterostructures for FET's, and fractional quantization of the Hall effect.
Abstract: New electronic phenomena have been demonstrated with structures that contain multiple layers of different semiconductor materials. Many of these phenomena are based on quantum confinement and tunnelling of carriers. The development of the molecular-beam epitaxy and metal-organic chemical vapor deposition techniques have made preparation of these structures possible. The new phenomena include quantum well injection lasers, modulation-doped heterostructures for FET's, and fractional quantization of the Hall effect.
3 citations