Topic
Quantum tunnelling
About: Quantum tunnelling is a research topic. Over the lifetime, 24431 publications have been published within this topic receiving 579635 citations. The topic is also known as: tunneling effect & tunnel effect.
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TL;DR: A bipolar field-effect transistor that exploits the low density of states in graphene and its one-atomic-layer thickness is reported, which has potential for high-frequency operation and large-scale integration.
Abstract: An obstacle to the use of graphene as an alternative to silicon electronics has been the absence of an energy gap between its conduction and valence bands, which makes it difficult to achieve low power dissipation in the OFF state We report a bipolar field-effect transistor that exploits the low density of states in graphene and its one-atomic-layer thickness Our prototype devices are graphene heterostructures with atomically thin boron nitride or molybdenum disulfide acting as a vertical transport barrier They exhibit room-temperature switching ratios of ≈50 and ≈10,000, respectively Such devices have potential for high-frequency operation and large-scale integration
2,401 citations
TL;DR: A Landauer formula for the current through a region of interacting electrons is derived using the nonequilibrium Keldysh formalism, and an enhanced conductance is predicted for tunneling through a quantum dot in the fractional quantum Hall regime.
Abstract: A Landauer formula for the current through a region of interacting electrons is derived using the nonequilibrium Keldysh formalism. The case of proportionate coupling to the left and right leads, where the formula takes an especially simple form, is studied in more detail. Two particular examples where interactions give rise to novel effects in the current are discussed: In the Kondo regime, an enhanced conductance is predicted, while a suppressed conductance is predicted for tunneling through a quantum dot in the fractional quantum Hall regime.
2,392 citations
TL;DR: In this article, a review of the statistical properties of the scattering matrix of a mesoscopic system is presented, where two geometries are contrasted: a quantum dot and a disordered wire.
Abstract: This is a review of the statistical properties of the scattering matrix of a mesoscopic system. Two geometries are contrasted: A quantum dot and a disordered wire. The quantum dot is a confined region with a chaotic classical dynamics, which is coupled to two electron reservoirs via point contacts. The disordered wire also connects two reservoirs, either directly or via a point contact or tunnel barrier. One of the two reservoirs may be in the superconducting state, in which case conduction involves Andreev reflection at the interface with the superconductor. In the case of the quantum dot, the distribution of the scattering matrix is given by either Dyson{close_quote}s circular ensemble for ballistic point contacts or the Poisson kernel for point contacts containing a tunnel barrier. In the case of the disordered wire, the distribution of the scattering matrix is obtained from the Dorokhov-Mello-Pereyra-Kumar equation, which is a one-dimensional scaling equation. The equivalence is discussed with the nonlinear {sigma} model, which is a supersymmetric field theory of localization. The distribution of scattering matrices is applied to a variety of physical phenomena, including universal conductance fluctuations, weak localization, Coulomb blockade, sub-Poissonian shot noise, reflectionless tunneling into a superconductor, and giant conductance oscillationsmore » in a Josephson junction. {copyright} {ital 1997} {ital The American Physical Society}« less
2,072 citations
TL;DR: In this article, the transport properties of a finite superlattice from the tunneling point of view have been computed for the case of a limited number of spatial periods or a relatively short electron mean free path.
Abstract: We have computed the transport properties of a finite superlattice from the tunneling point of view. The computed I‐V characteristic describes the experimental cases of a limited number of spatial periods or a relatively short electron mean free path.
1,996 citations
TL;DR: In this paper, a method for finding free energy barriers for transitions in high-dimensional classical and quantum systems is presented and used to calculate the dissociative sticking probability of H 2 on a metal surface within the transition state theory.
1,880 citations