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Showing papers on "Quantum well published in 1973"


Book
01 Jan 1973
TL;DR: In this article, the quantum effects in transport Phenomena are discussed. But the authors focus on the quantum hall effect and do not consider the effect of the quantum field effect.
Abstract: 1. Elementary Properties of Semiconductors.- 2. Energy Band Structure.- 3. Semiconductor Statistics.- 4. Charge and Energy Transport in a Nondegenerate Electron Gas.- 5. Carrier Diffusion Processes.- 6. Scattering Processes in a Spherical One-Valley Model.- 7. Charge Transport and Scattering Processes in the Many-Valley Model.- 8. Carrier Transport in the Warped-Sphere Model.- 9. Quantum Effects in Transport Phenomena.- 10. Impact Ionization and Avalanche Breakdown.- 11. Optical Absorption and Reflection.- 12. Photoconductivity.- 13. Light Generation by Semiconductors.- 14. Surface and Interface Properties and the Quantum Hall Effect.- 15. Miscellaneous Semiconductors.- Appendices.- A. Table A: Physical Constants.- B. Envelope wave function for Quantum Wells.- C. Table C: Semiconductor and Semimetal Data.- References.- About the Author.

471 citations


Journal ArticleDOI
TL;DR: In this article, large spiking amplitudes of the modulated photon density are generated near the resonance frequency of the system and an approximate large-signal oscillatory solution is described.
Abstract: Large-signal direct modulation of injection lasers is described with the aid of nonlinear rate equations. For periodic modulation of arbitrary amplitude, an approximate large-signal oscillatory solution is described. Large spiking amplitudes of the modulated photon density are generated near the resonance frequency of the system.

47 citations


Journal ArticleDOI
T. Ozeki1, T. Ito1
TL;DR: In this article, the spontaneous carrier life time of DH-(GaAl)As was measured as 2-5 ns, and the bit rate of 200 Mbits/s was examined.
Abstract: The pulse modulation of DH-(GaAl)As lasers at a bit rate of 200 Mbits/s was examined. To reduce the variation of the lasing pulse peak and lasing delay time due to combinations of "1" and "0" bits, prepumping condition and the damped oscillation parameters are important. The spontaneous carrier life time of DH-(GaAl)As lasers was measured as 2-5 ns.

24 citations


Journal ArticleDOI
TL;DR: A summary of recent accomplishments and the state of the art of far-infrared (far-IR) molecular lasers is presented in this paper, where problems of excitation, laser line assignments, relaxation and absolute frequency measurements are discussed.
Abstract: A summory is presented of recent accomplishments and the state of the art of far-infrared (far-IR) molecular lasers. Problems of excitation, laser line assignments, relaxation, and absolute frequency measurements are discussed. Predictions of future far-IR developments are made.

22 citations


Journal ArticleDOI
TL;DR: In this paper, the factors responsible for the multimode emission of injection lasers are considered and a review is given of experimental investigations of this subject, including the use of external and composite resonators.
Abstract: The factors responsible for the multimode emission of injection lasers are considered and a review is given of experimental investigations of this subject. Various methods of spatial and spectral selection of the oscillation modes are described, including particularly the use of external and composite resonators. The applications of single-mode injection lasers are discussed. It is reported that such lasers are used very widely in high-resolution infrared spectroscopy.

11 citations


ReportDOI
01 Mar 1973
TL;DR: In this paper, the authors describe some of the advances in the design and performance of stable gas lasers, including the construction and output characteristics of highly reproducible, stable, selectable single transition grating-controlled CO2 and CO lasers.
Abstract: : The report describes some of the advances in the design and performance of stable gas lasers. The construction and output characteristics of highly reproducible, stable, selectable single transition grating-controlled CO2 and CO lasers are described. Experiments on short-term stability, standing wave saturation resonances, pressure and power broadening, pressure shift and long-term stabilization of CO2 lasers are discussed.

8 citations


Book ChapterDOI
01 Jan 1973

7 citations


Journal ArticleDOI
TL;DR: In this article, an analytical quantitative treatment of the Paoli-Ripper model and applied the results to the GaAs laser diode is presented and a rather good agreement between theory and experiment is achieved.
Abstract: Due to the high dispersion near the band gap, normal mode locking cannot occur in usual semiconductor lasers. According to the Paoli-Ripper model the pulse properties of such lasers can be explained in terms of second-order mode locking. We present an analytical quantitative treatment of the Paoli-Ripper model and apply the results to the GaAs laser diode. A rather good agreement between theory and experiment is achieved.

5 citations


Journal ArticleDOI
I. Hayashi1

4 citations


Journal ArticleDOI
TL;DR: In this paper, the optical power densities available in electric CO 2 lasers were analyzed for high values of the vibrational temperature of the ν 3 mode (> 1000 K, and they gave values 25 percent lower than those obtained by the classical gain-saturation formula.
Abstract: Sophisticated numerical calculations have been made of the optical power densities available in electric CO 2 lasers. For high values of the vibrational temperature of the ν 3 mode (> 1000 K), they give values 25 percent lower than those obtained by the classical gain-saturation formula. This oversaturation effect may also exist in other types of lasers.

4 citations


Journal ArticleDOI
TL;DR: In this article, the authors measured the time-resolved spectra of an internal Q-switching emission of electron-beam-excited GaAs lasers at the rate of 5.63 A/ns at 85 K.
Abstract: Time-resolved spectra of an internal Q -switching emission of electron-beam-excited GaAs lasers were measured. The spectra shifted to longer wavelengths at the rate of 5.63 A/ns at 85 K. Time-resolves spectra of a normal laser emission were also measured to be shifted to longer wavelengths at the rate of about 0.3 A/ns. This remarkable difference of the spectral shifts can be understood if the former shift is caused by the quasi-Fermi level in the conduction band and the latter shift is caused by thermal effects.




Journal ArticleDOI
TL;DR: In this paper, PbS diode lasers have been developed with cw output powers of about 1/3 W in the 4.3μm wavelength region, achieving external quantum efficiencies as high as 27%.
Abstract: Stripe‐geometry PbS diode lasers have been developed with cw output powers of about 1/3 W in the 4.3‐μm wavelength region. A maximum cw output power in a single longitudinal mode of about 50 mW, over‐all external quantum efficiencies as high as 27%, and incremental internal quantum efficiencies near 60% have been observed. The improved performance has been achieved through a number of significant developments in device technology.