Showing papers on "Quantum well published in 1974"

Distributed-Feedback Double-Heterostructure GaAs Injection Laser with Fundamental Grating

Abstract: The pulse operation of two DEF GaAs junction lasers employing the fundamental grating order at 77$sup 0$K for double-heterostructures formed by both liquid and vapor phase epitaxy is described. (TFD)

Recent progress in semiconductor lasers — cw GaAs lasers are now ready for new applications

Abstract: Semiconductor lasers, first demonstrated in 1962, have spent a long time in development without finding many applications. (GaAl)As double heterostructure diode lasers with stripe structure have distinctive characteristics for cw operation with a pure mode, in addition to their compactness and ease of operation. Quick degradation of these lasers has been investigated and it was found that the degradation was caused by local crystalline defects produced by internal stresses and local weakness. Improvements based on the study have provided reliable lasers with an operating life of over several thousand hours. These new generation lasers will be useful for optical communications and other optical systems.

GaAs-Ga 1−x Al x As double-heterostructure distributed feedback diode lasers

Abstract: Lasing characteristics of GaAs-Ga1-xAlxAs double-heterostructure distributed feedback diode lasers are investigated at 80-100 K under electrical pumping. The main subjects studied here are the spectrum and mode of the distributed feedback laser and its temperature characteristics. Single longitudinal mode oscillation is observed at wavelengths which are determined by the corrugation period. The temperature dependence of the wavelength is about 1/3 that of the cleaved Fabry-Perot laser made from the same wafer.