Topic
Quantum well
About: Quantum well is a research topic. Over the lifetime, 44627 publications have been published within this topic receiving 674023 citations. The topic is also known as: QW & quantum potential well.
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TL;DR: In this article, the implementation of °-function-like doping profiles during molecular beam epitaxy (MBE) of GaAs by using Si donors and Be acceptors is employed to generate V-shaped potential wells with a quasi-two-dimensional electron (hole) gas and to create a new GaAs sawtooth doping superlattice with strongly reduced energy gap.
157 citations
TL;DR: In this paper, the Stark effect was observed in Ge quantum wells with SiGe barriers grown on Si substrates, in good agreement with theoretical calculations, and the effect can be seen over the C-band around 1.55mum wavelength in structures heated to 90degC.
Abstract: We present observations of quantum confinement and quantum-confined Stark effect (QCSE) electroabsorption in Ge quantum wells with SiGe barriers grown on Si substrates, in good agreement with theoretical calculations. Though Ge is an indirect gap semiconductor, the resulting effects are at least as clear and strong as seen in typical III-V quantum well structures at similar wavelengths. We also demonstrate that the effect can be seen over the C-band around 1.55-mum wavelength in structures heated to 90degC, similar to the operating temperature of silicon electronic chips. The physics of the effects are discussed, including the effects of strain, electron and hole confinement, and exciton binding, and the reasons why the effects should be observable at all in such an indirect gap material. This effect is very promising for practical high-speed, low-power optical modulators fabricated compatible with mainstream silicon electronic integrated circuits
156 citations
TL;DR: In this article, the authors have demonstrated for the first time interband tunneling in single and double-barrier polytype heterostructures of GaSb and AlSb/InAs with a peak-to-valley ratio of 2.7:1 at 77 K.
Abstract: Polytype heterostructures of GaSb/AlSb/InAs show interband tunneling due to the 0.1 eV overlap of the InAs conduction band and the GaSb valence band. This broken‐gap configuration results in a novel mechanism for negative differential resistance that has potential applications in high‐speed devices. We have demonstrated for the first time interband tunneling in single‐barrier and double‐barrier polytype heterostructures. Single‐barrier structures show negative differential resistance due to the change in interband tunneling with applied bias. A peak‐to‐valley ratio of 2.7:1 at 77 K was observed in this case. Double‐barrier structures using an InAs quantum well exhibit resonant interband tunneling with a peak‐to‐valley current ratio of more than 60:1 at 77 K. This structure is promising for applications to three‐terminal devices because of the very wide quantum well that can be achieved.
156 citations
TL;DR: In this article, Derry et al. derived basic scaling laws for bulk, two-dimensional and one-dimensional (quantum wire) semiconductor lasers, starting from quantum derivation of the optical properties of confined carriers, the dimensional dependencies of the scaling laws are made explicit.
Abstract: Basic scaling laws are derived for bulk, two‐dimensional (quantum well) and one‐dimensional (quantum wire) semiconductor lasers. Starting from quantum derivation of the optical properties of confined carriers, the dimensional dependencies of the scaling laws are made explicit. Threshold currents of ∼100 and 2–3 μA are predicted for single quantum well and quantum wire lasers, respectively. The basic considerations of this analysis were used recently to obtain ultralow threshold quantum well lasers [P. L. Derry, A. Yariv, K. Lau, N. Bar‐Chaim, K. Lee, and J. Rosenberg, Appl. Phys. Lett. 50, 1773 (1987)].
156 citations
TL;DR: In this article, a many-body calculation of the electron-hole correlation enhancement is presented, which identifies this peak with the Mahan exciton, the result of the Coulomb interaction between the photoexcited hole in the valence band and the sea of electrons in the conduction band.
Abstract: The temperature-dependent optical absorption and luminescence spectra of GaAs/AlGaAs and InGaAs/InAlAs n-doped modulation-doped quantum wells is discussed with emphasis on the peak seen at the edge of the absorption spectra of these samples A many-body calculation of the electron-hole correlation enhancement is presented, which identifies this peak with the Mahan exciton-the result of the Coulomb interaction between the photoexcited hole in the valence band and the sea of electrons in the conduction band This calculation accounts for the strong dependence of the absorption edge peak on both the temperature and carrier concentration, in good qualitative agreement with experimental data and with previously published results The changes induced by the carriers on the subband structure through self-consistent calculations are also analyzed, and it is concluded that in these symmetric structures, the changes are small for achievable carrier densities >
156 citations