scispace - formally typeset
Search or ask a question
Topic

Quantum well

About: Quantum well is a research topic. Over the lifetime, 44627 publications have been published within this topic receiving 674023 citations. The topic is also known as: QW & quantum potential well.


Papers
More filters
Journal ArticleDOI
TL;DR: In this article, the optical properties of ZnSe/Zn0.86Cd0.14Se single quantum well have been investigated under direct and indirect excitation, and the temperature dependence of photoluminescence and resonant Raman scattering are investigated.
Abstract: The optical properties of strained‐layer ZnSe/Zn0.86Cd0.14Se single quantum wells have been studied. The photoluminescence under direct and indirect excitation is investigated in detail. The temperature dependence of photoluminescence and resonant Raman scattering are investigated. Very strong 2LO‐phonon Raman scattering has been observed with Zn0.86Cd0.14Se quantum wells, where the scattered photon energy is in resonance with an exciton transition. Experimental exciton energies are compared with a finite‐square‐potential quantum‐well model including band nonparabolicity and the strain effect. Based on Hill’s theory [J. Phys. C 7, 521 (1974)] we have computed the band gap of Zn1−xCdxSe as a function of composition x.

153 citations

Journal ArticleDOI
TL;DR: By coupling the as-prepared PQDs with microfiber evanescent light field, the PQD-based saturable absorber (SA) device exhibits ultrafast nonlinear saturable absorption property, with an optical modulation depth of 8.1% at the telecommunication band.
Abstract: We fabricate ultrasmall phosphorene quantum dots (PQDs) with an average size of 2.6 ± 0.9 nm using a liquid exfoliation method involving ultrasound probe sonication followed by bath sonication. By coupling the as-prepared PQDs with microfiber evanescent light field, the PQD-based saturable absorber (SA) device exhibits ultrafast nonlinear saturable absorption property, with an optical modulation depth of 8.1% at the telecommunication band. With the integration of the all-fiber PQD-based SA, a continuous-wave passively mode-locked erbium-doped (Er-doped) laser cavity delivers stable, self-starting pulses with a pulse duration of 0.88 ps and at the cavity repetition rate of 5.47 MHz. Our results contribute to the growing body of work studying the nonlinear optical properties of ultrasmall PQDs that present new opportunities of this two-dimensional (2D) nanomaterial for future ultrafast photonic technologies.

153 citations

Journal Article
TL;DR: In this article, two types of high-efficiency white light-emitting diodes (LEDs) composed of an InGaN multi-quantum well (MQW), which emit light of two or three different colors without phosphors, were fabricated.
Abstract: We fabricated two types of high-efficiency white light-emitting diodes (LEDs) composed of an InGaN multi-quantum well (MQW), which emit light of two or three different colors without phosphors. The Type-1 white LED emits light of two colors (blue and yellow) from the MQW active layer, while the Type-2 LED emits light of three colors (blue, green and red). When the Type-1 white LED was operated at a forward current of 20 mA at room temperature, the color temperature (Tcp), average color rendering (Ra) and luminous efficiency were 7600 K, 42.7 and 11.04 lm/W, respectively. When the Type-2 white LED was operated at a forward current of 20 mA at room temperature, Tcp, Ra and luminous efficiency were 5060 K, 80.2 and 7.94 lm/W, respectively.

153 citations

Journal ArticleDOI
TL;DR: In this article, the progress of AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs), mainly focusing in the work of the authors' group, is reviewed.
Abstract: This paper reviews the progress of AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs), mainly focusing in the work of the authors’ group. The background to the development of the current device structure on sapphire is described and the reason for using a (0001) sapphire with a miscut angle of 1.0° relative to the m-axis is clarified. Our LEDs incorporate uneven quantum wells (QWs) grown on an AlN template with dense macrosteps. Due to the low threading dislocation density of AlGaN and AlN templates of about 5 × 108/cm2, the number of nonradiative recombination centers is decreased. In addition, the uneven QW show high external quantum efficiency (EQE) and wall-plug efficiency, which are considered to be boosted by the increased internal quantum efficiency (IQE) by enhancing carrier localization adjacent to macrosteps. The achieved LED performance is considered to be sufficient for practical applications. The advantage of the uneven QW is discussed in terms of the EQE and IQE. A DUV-LED die with an output of over 100 mW at 280–300 nm is considered feasible by applying techniques including the encapsulation. In addition, the fundamental achievements of various groups are reviewed for the future improvements of AlGaN-based DUV-LEDs. Finally, the applications of DUV-LEDs are described from an industrial viewpoint. The demonstrations of W/cm2-class irradiation modules are shown for UV curing.

153 citations

Journal ArticleDOI
T. Sasaki1, Mitsuhiro Kitamura1, Ikuo Mito1
TL;DR: In this article, a mask-patterned planar planar InP substrate is used to grow InGaAsP/InP layers on typically 2 μm wide open stripe regions between pairs of SiO 2 mask stripes.

153 citations


Network Information
Related Topics (5)
Band gap
86.8K papers, 2.2M citations
93% related
Photoluminescence
83.4K papers, 1.8M citations
93% related
Quantum dot
76.7K papers, 1.9M citations
92% related
Thin film
275.5K papers, 4.5M citations
92% related
Silicon
196K papers, 3M citations
91% related
Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023262
2022615
2021560
2020712
2019859
2018891