Topic
Quantum well
About: Quantum well is a research topic. Over the lifetime, 44627 publications have been published within this topic receiving 674023 citations. The topic is also known as: QW & quantum potential well.
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TL;DR: In this article, a threshold current density of 343 A/cm2 was recorded from a laser with 2 mm cavity length and 30 μm ridge width in pulsed-mode operation.
Abstract: 3.04 μm emission has been achieved in GaInAsSb/AlGaAsSb double-quantum-well ridge waveguide diode lasers in continuous-wave mode up to 20 °C. A threshold current density of 343 A/cm2 was recorded from a laser with 2 mm cavity length and 30 μm ridge width in pulsed-mode operation. A characteristic temperature of 30 K was measured from a 1.2 mm long device. Threshold current densities and characteristic temperatures of GaInAsSb/AlGaAsSb laser diodes with wavelengths from 2.24 to 3.04 μm are summarized. The threshold current density per quantum well increases strongly with wavelength; at 3.04 μm, it is three times that value of a 2.24 μm device.
151 citations
TL;DR: In this article, the basic concepts and first-order growth model derived from the RHEED intensity oscillation technique are described and the limitations imposed by the experimentally demonstrated multiple-scattering nature of the diffraction process are indicated.
151 citations
TL;DR: The feasibility of the intersubband transition (ISBT) in Al(Ga)N/GaN quantum wells (QWs) as a device mechanism for ultrafast optical switches is theoretically investigated.
Abstract: The feasibility of the intersubband transition (ISBT) in Al(Ga)N/GaN quantum wells (QWs) as a device mechanism for ultrafast optical switches is theoretically investigated The 155-µ m ISBT is shown to be feasible because of its large conduction band discontinuity The intersubband relaxation time at 155-µ m is estimated to be 80 fs, which is about 30 times shorter than that in InGaAs QWs The third order nonlinear susceptibility is estimated to be 16×10-15 m2 V-2 for N=1×1018 cm-3 These characteristics suggest that the ISBT in nitride QWs is a promising mechanism for multi-terabit/s optical switches
151 citations
TL;DR: In this paper, the transition from transverse electric (TE) polarization to transverse magnetic (TM) polarization as the wavelength decreases is investigated for AlGaN-based multi-quantum-well light emitters.
Abstract: For AlGaN-based multi-quantum-well light emitters grown on c-plane substrates there is a tendency for the polarization of the emitted light to switch from transverse electric (TE) polarization to transverse magnetic (TM) polarization as the wavelength decreases. This transition depends on various factors that include the strain in the quantum well. Experimental results are presented that illustrate the phenomenon for nitride light emitting diodes (LEDs) grown on sapphire and on bulk AlN. Model calculations are presented which quantify the dependence of the TE/TM switch on the quantum well strain and the Al composition in the barriers surrounding the well.
151 citations
TL;DR: In this article, the growth, structural investigations, and lasing properties of dilute bismide Ga(AsBi)/(AlGa)As single quantum well lasers with 2.2% Bi grown by metal organic vapor phase epitaxy on GaAs (001) substrates were reported.
Abstract: The Ga(AsBi) material system opens opportunities in the field of high efficiency infrared laser diodes. We report on the growth, structural investigations, and lasing properties of dilute bismide Ga(AsBi)/(AlGa)As single quantum well lasers with 2.2% Bi grown by metal organic vapor phase epitaxy on GaAs (001) substrates. Electrically injected laser operation at room temperature is achieved with a threshold current density of 1.56 kA/cm2 at an emission wavelength of ∼947 nm. These results from broad area devices show great promise for developing efficient IR laser diodes based on this emerging materials system.
151 citations