Topic
Quantum well
About: Quantum well is a research topic. Over the lifetime, 44627 publications have been published within this topic receiving 674023 citations. The topic is also known as: QW & quantum potential well.
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TL;DR: In this article, the photoluminescence (PL) linewidths at 2 K were the narrowest that have been ever reported for Ga0.47In0.53As quantum wells grown by any technique.
Abstract: We have prepared by chemical beam epitaxy extremely high quality Ga0.47In0.53As/InP quantum wells with thickness as thin as 6 A. Emission as short as 1.09 μm at 2 K (1.14 μm at 300 K) was obtained. Very sharp intense efficient luminescence peaks due to excitonic transitions were obtained from all quantum wells. The photoluminescence (PL) linewidths at 2 K were the narrowest that have been ever reported for Ga0.47In0.53As quantum wells grown by any technique. In fact, these Ga0.47In0.53As quantum well linewidths are at least equal to the narrowest linewidths ever reported for the perfected GaAs/AlAs and GaAs/AlxGa1−xAs quantum wells. These linewidths indicate the ‘‘effective’’ interface roughness to be 0.12 lattice constant, which can be interpreted as that the quantum well was largely consisting of a big domain of the same thickness Lz perforated with a small fraction of small domains of (Lz+a0/2), where a0 (=5.86 A) is the lattice constant. No broadening due to band filling from impurities was found. All...
148 citations
TL;DR: It is demonstrated that the 2D GaN shows uniformly incremental lattice, unique phonon modes, blue-shifted photoluminescence emission and improved internal quantum efficiency, providing direct evidence to the previous theoretical predictions.
Abstract: Two-dimensional (2D) gallium nitride (GaN) has been highly anticipated because its quantum confinement effect enables desirable deep-ultraviolet emission, excitonic effect and electronic transport properties. However, the currently obtained 2D GaN can only exist as intercalated layers of atomically thin quantum wells or nanometer-scale islands, limiting further exploration of its intrinsic characteristics. Here, we report, for the first time, the growth of micrometer-sized 2D GaN single crystals on liquid metals via a surface-confined nitridation reaction and demonstrate that the 2D GaN shows uniformly incremental lattice, unique phonon modes, blue-shifted photoluminescence emission and improved internal quantum efficiency, providing direct evidence to the previous theoretical predictions. The as-grown 2D GaN exhibits an electronic mobility of 160 cm2·V–1·s–1. These findings pave the way to potential optoelectronic applications of 2D GaN single crystals.
148 citations
TL;DR: In this article, two different approaches, a photoconductive response technique and a correlation of lasing thresholds with theoretical threshold carrier concentrations have been used to determine Auger lifetimes in InAs/GaInSb quantum wells.
Abstract: Two different approaches, a photoconductive response technique and a correlation of lasing thresholds with theoretical threshold carrier concentrations have been used to determine Auger lifetimes in InAs/GaInSb quantum wells. For energy gaps corresponding to 3.1–4.8 μm, the room-temperature Auger coefficients for seven different samples are found to be nearly an order-of-magnitude lower than typical type-I results for the same wavelength. The data imply that at this temperature, the Auger rate is relatively insensitive to details of the band structure.
148 citations
TL;DR: In this paper, a terahertz quantum cascade laser operating on a thermoelectric cooler up to a record-high temperature of 210.5 K was presented.
Abstract: We present a terahertz quantum cascade laser operating on a thermoelectric cooler up to a record-high temperature of 210.5 K. The active region design is based on only two quantum wells and achieves high temperature operation thanks to a systematic optimization by means of a nonequilibrium Green's function model. Laser spectra were measured with a room temperature detector, making the whole setup cryogenic free. At low temperatures (∼40 K), a maximum output power of 200 mW was measured.
148 citations
TL;DR: In this article, the authors performed time-resolved radiative recombination measurements on GaSb quantum dots and showed that photoluminescence decays with a fast and a slow component.
Abstract: Time‐resolved radiative recombination measurements on GaSb quantum dots have been performed. The GaSb quantum dots are grown by molecular beam epitaxy on (100) GaAs through a self‐assembly process. Time‐resolved measurements show that, after a rapid hole capture process, the photoluminescence decays with a fast and a slow component. The fast component is shortened significantly with higher excitation intensity while the slow component is roughly constant. The radiative lifetimes are much longer than the lifetimes of ordinary GaSb quantum wells with a straddling band lineup. These results support a staggered band lineup and space charge induced band‐bending model.
148 citations