Topic
Quantum well
About: Quantum well is a research topic. Over the lifetime, 44627 publications have been published within this topic receiving 674023 citations. The topic is also known as: QW & quantum potential well.
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TL;DR: In this paper, step-like features in the absorption and photo-current spectra were identified as 2D band edge transitions from their temperature dependence, revealing the large anisotropy of the electronic band structure, and showing a plateau in the currentvoltage curve, which can be explained in terms of Wannier-Stark localization in the materials.
142 citations
TL;DR: Quasi-two-dimensional excitons in (Zn,Cd)Se/ZnSe quantum wells were investigated and observed a confinement-induced enhancement of the exciton binding energy to a value greater than the longitudinal-optical (LO) -phonon energy.
Abstract: Quasi-two-dimensional (2D) excitons in (Zn,Cd)Se/ZnSe quantum wells were investigated. We observed a confinement-induced enhancement of the exciton binding energy to a value greater than the longitudinal-optical (LO) -phonon energy. This unusual condition results in an effective reduction of the exciton--LO-phonon coupling. As a consequence, excitonic absorption features in this quantum-well system are well preserved to room temperature and beyond.
142 citations
TL;DR: In this article, the radiative quantum efficiencies of an array of InAs/GaAs quantum boxes (QBs) obtained by self-organized growth and of a single high quality InGaAs QW on GaAs substrates were compared by photoluminescence.
Abstract: We have compared by photoluminescence (PL) the radiative quantum efficiencies η of an array of InAs/GaAs quantum boxes (QBs) obtained by self‐organized growth and of a single high quality InGaAs quantum well (QW). On GaAs substrates, η is essentially the same for both structures. A growth on a commercial GaAs‐on‐Si substrate entails drastic quenching of the integrated PL intensity and shortening of the carrier lifetime τ for the InGaAs QW, whereas both τ and η are not modified for the QB array. The efficient carrier capture by InAs QBs, combined with the localized nature of QB excitons hinders in this case the carrier diffusion toward dislocations. These superior properties of QBs on Si, which are observed over a wide range of excitation powers and for temperatures up to 300 K, opens a novel route toward efficient and reliable light emitters on Si.
141 citations
TL;DR: In this paper, the authors proposed a pn diode structure that combines the structure and behavior of both resonant tunneling and conventional tunnel diodes, leading to high speed and low excess current.
Abstract: Novel device structures are proposed, incorporating quantum wells and a pn diode structure. Such a device combines the structure and behavior of both resonant tunneling diodes and conventional tunnel diodes, leading to high speed and low excess current. There is interband tunneling between the conduction band and the valence band, as is in the case for a tunnel diode, but carriers are confined within quantum wells. Under small forward bias the diodes are expected to behave in a manner very similar to that of a tunnel diode formed of bulk material. Under large forward bias, however, the devices act much like resonant tunneling diodes, and display additional negative resistance regions.
141 citations
TL;DR: In this article, the photoluminescence decay time of excitons is used as a probe of internal electric fields in GaN-(Ga, Al)N quantum wells in various configurations of strain, well widths, and barrier widths.
Abstract: Very strong coefficients for spontaneous and piezoelectric polarizations have recently been predicted for III-V nitride semiconductors with natural wurtzite symmetry. Such polarizations influence significantly the mechanisms of radiative emissions in quantum-confinement heterostructures based on these materials. The photoluminescence decay time of excitons is used as a probe of internal electric fields in GaN-(Ga, Al)N quantum wells in various configurations of strain, well widths, and barrier widths. The measured decays are not only controlled by radiative lifetimes, which depend on the fields inside GaN wells but also on the nonradiative escape of carriers through Ga1 - xAlyN barriers, which depends on their widths and on the electric field in these layers. It is shown in particular that the magnitude of the held in the wells is not a simple function of the strain of these layers via the only piezoelectric effect, but rather the result of the interplay of spontaneous and piezoelectric polarizations in both well and barrier materials. [S0163-1829(99)02923-9].
141 citations