Topic
Quantum well
About: Quantum well is a research topic. Over the lifetime, 44627 publications have been published within this topic receiving 674023 citations. The topic is also known as: QW & quantum potential well.
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TL;DR: In this paper, the concept of below threshold and above threshold current injection efficiency of quantum well (QW) lasers is clarified and the analysis presented in this paper is applied to both the 1200nm and 1300nm emitting InGaAsN QW lasers.
Abstract: The concept of below-threshold and above-threshold current injection efficiency of quantum well (QW) lasers is clarified. The analysis presented here is applied to the current injection efficiency of 1200nm emitting InGaAs and 1300nm emitting InGaAsN QW lasers. The role of heavy-hole leakage in the InGaAsN QW lasers is shown to be significant in determining the device temperature sensitivity. The current injection efficiency of QW lasers with large monomolecular recombination processes is shown to be less temperature sensitive. Excellent agreement between theory and experiment is obtained for both the 1200nm emitting InGaAs QW and the 1300nm emitting InGaAsN QW lasers. Suppression of thermionic carrier escape processes in the InGaAsN QW results in high performance 1300nm emitting lasers operating up to high temperature.
134 citations
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TL;DR: In this paper, the optical rectification in a semiparabolic quantum well is theoretically investigated and the nonlinearity resulting from the asymmetry of the confining potential is studied in the lowest order.
134 citations
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TL;DR: Par cette approche on obtient simultanement le coefficient d'absorption optique, du aux etats lies and continuum des excitons, dans laquelle l'etat lie de l'exciton 1s est calcule de facon variationnelle.
Abstract: An exciton Green's function is derived and used to calculate the polarization-dependent optical absorption in a semiconductor quantum well with an applied electric field. With use of the exciton (or Coulomb) Green's-function approach, the optical-absorption coefficient due to the bound and continuum states of excitons can be obtained simultaneously and this approach also takes into account the coupling between different subband pairs. This is in contrast with the conventional approach in which the 1s exciton bound state is calculated variationally and the continuum states are calculated simply using the Sommerfeld enhancement factor from the pure two-dimensional case without the correct quantum size effect. Also, the coupling between different subband pairs is usually neglected. We compare the numerical results of the Green's-function method with those of the commonly used variational method and find that the variational method overestimates the oscillator strength by 20% for the 1s bound state and by 50% for the continuum, although the 1s bound-state energy can be quite accurate. The numerical results using the exciton Green's function are compared with experimental data and found to be in very good agreement.
133 citations
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TL;DR: In this article, Raman measurements on a new type of superlattice consisting of $n$-and $p$-type doped GaAs layers grown by molecular-beam epitaxy confirm crucial predictions of theory.
Abstract: Luminescence and Raman measurements on a new type of superlattice consisting of $n$- and $p$-type doped GaAs layers grown by molecular-beam epitaxy confirm crucial predictions of theory. A strongly tunable energy gap is found in luminescence. Raman experiments provide the first observation of electronic subbands in purely space-charge-induced quantum wells. A combined analysis of the luminescence and Raman data yields excellent agreement with self-consistent subband calculations based only on the design parameters of the sample.
133 citations
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TL;DR: In this paper, the optical gain and the refractive index change of a uniaxially stressed GaAs-Al/sub 2/Ga/sub 1-x/As quantum-well laser were studied theoretically using the multiband effective mass theory (k-p method) and density matrix formalism with intraband relaxations.
Abstract: The optical gain and the refractive index change of a uniaxially stressed GaAs-Al/sub 2/Ga/sub 1-x/As quantum-well laser is studied theoretically using the multiband effective mass theory (k-p method) and density matrix formalism with intraband relaxations. It is found that uniaxial strain of the quantum well substantially alters the subband structures and the optical gain of the quantum-well laser. In particular, the gain of the TM mode increases while the gain of the TE mode decreases with increasing stress. Thus, the threshold current either decreases or increases with the stress, depending on whether the laser is operating in a TM or TE mode. >
133 citations