Topic
Quantum well
About: Quantum well is a research topic. Over the lifetime, 44627 publications have been published within this topic receiving 674023 citations. The topic is also known as: QW & quantum potential well.
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132 citations
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TL;DR: In this article, the first observation of the quantum constrained Stark effect in InGaAs/InP multiple quantum wells grown by organometallic vapor phase epitaxy was reported, both in transmission and photoconductivity measurements.
Abstract: We report the first observation of the quantum‐confined Stark effect in InGaAs/InP multiple quantum wells grown by organometallic vapor phase epitaxy. The effect is observed both in transmission and photoconductivity measurements. The observed spectral shift agrees with the theory.
132 citations
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TL;DR: In this article, the changes in the real index of refraction and the optical absorption for conduction intersubband transitions in AlxGa1−xAs/GaAs/AlxGa 1 −xAs quantum wells are examined as a function of the carrier density.
Abstract: The changes in the real index of refraction and the optical absorption for conduction intersubband transitions in AlxGa1−xAs/GaAs/AlxGa1−xAs quantum wells are examined as a function of the carrier density. Various values for the input optical field and quantum well width are considered in the calculations. The linear contribution due to χ(1) as well as the nonlinear contribution from χ(3) is included. The relationship of the results to device applications such as waveguides and optical modulators is discussed.
131 citations
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TL;DR: In this paper, the effect of doping with Be was found to be very effective for shortening the carrier lifetime in InGaAs/InAlAs multiple quantum wells (MQWs) grown at low temperature by molecular beam epitaxy.
Abstract: Doping with Be was found to be very effective for shortening of carrier lifetime in InGaAs/InAlAs multiple quantum wells (MQWs) grown at low temperature by molecular beam epitaxy. The MQW materials have carrier lifetimes controllable from a few tens of picoseconds to 1 ps in the 1.55‐μm wavelength region, coupled with a large optical nonlinearity due to an excitonic feature, implying applicability to ultrafast optical devices in the fiber‐optic communication. The carrier lifetime was measured by a time‐resolved pump‐probe method using an optical source based on a 1.535‐μm semiconductor laser. We also investigated the resistivity, carrier density, and Hall mobility in the MQWs.
131 citations
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TL;DR: In this article, the conduction and valence-band offsets for GaAs/Ga0.51In0.49P quantum wells were independently estimated by measuring the capacitance transient resulting from thermal emission of carriers from the respective wells.
Abstract: We have independently estimated the conduction‐ and valence‐band offsets ΔEc and ΔEv in GaAs/Ga0.51In0.49P quantum wells by measuring the capacitance transient resulting from thermal emission of carriers from the respective wells. The heterostructure samples were grown by low‐pressure metalorganic chemical vapor deposition. The band offsets are extrapolated from the emission activation energies with appropriate corrections. The estimated values of ΔEc and ΔEv are 0.198 and 0.285 eV, respectively.
131 citations