Topic
Quantum well
About: Quantum well is a research topic. Over the lifetime, 44627 publications have been published within this topic receiving 674023 citations. The topic is also known as: QW & quantum potential well.
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TL;DR: An experiment-theory comparison is presented to demonstrate terahertz-induced extreme-nonlinear transients in a GaAs/AlGaAs quantum-well system, identifying clear ponderomotive contributions and the generation of teraHertz harmonics.
Abstract: An experiment-theory comparison is presented to demonstrate terahertz-induced extreme-nonlinear transients in a GaAs/AlGaAs quantum-well system. The terahertz-pump and optical-probe experiments show pronounced spectral modulations of the light- and heavy-hole excitonic resonances. Excellent agreement with the results of microscopic many-body calculations is obtained, identifying clear ponderomotive contributions and the generation of terahertz harmonics.
116 citations
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TL;DR: In this article, a drift diffusion model was proposed to explain the sublinear light-current characteristics and temperature dependence by the influence of the large acceptor ionization energy in Mg-doped GaN and a triangular density of states function characteristic of localized states.
Abstract: Pulsed light–current characteristics of InGaN/GaN quantum welllight-emitting diodes have been measured as a function of temperature, with sublinear behavior observed over the whole temperature range, 130–330 K. A distinctive temperature dependence is also noted where the light output, at a fixed current, initially increases with temperature, before reaching a maximum at 250 K and then decreases with subsequent increases in temperature. On the basis of a drift diffusion model, we can explain the sublinear light–current characteristics and the temperature dependence by the influence of the large acceptor ionization energy in Mg-doped GaN together with a triangular density of states function characteristic of localized states. Without the incorporation of localization effects, we are unable to reproduce the temperature dependence whilst maintaining emission at the observed wavelength. This highlights the importance of localization effects on device performance.
116 citations
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TL;DR: In this paper, the second-order susceptibility due to an inter-subband transition within the conduction band of a quantum well in an external applied electric field was predicted, and it was shown that for moderate values of an applied electric fields of 10 −70 kV/cm, the second−order susceptibility is generally 10 −100 times larger than that of bulk GaAs.
Abstract: We present theoretical predictions of the second‐harmonic susceptibility due to an intersubband transition within the conduction band of a quantum well in an external applied electric field. The asymmetry of the quantum well due to the electric field accounts for the nonvanishing of the second‐order susceptibilities. It is shown that for moderate values of an applied electric field of 10–70 kV/cm, the second‐harmonic susceptibility is generally 10–100 times larger than that of bulk GaAs. Furthermore, this procedure of second‐harmonic generation can be controlled by an external modulating voltage.
116 citations
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TL;DR: In this article, a self-consistent analysis of type-II InGaN-GaNAs quantum wells with thin dilute-As (∼3%) GaNAs layer is performed.
Abstract: Type-II InGaN–GaNAs quantum wells (QWs) with thin dilute-As (∼3%) GaNAs layer are analyzed self-consistently as improved III-nitride gain media for diode lasers. The band structure is calculated by using a six-band k⋅p formalism, taking into account valence band mixing, strain effect, spontaneous and piezoelectric polarizations, as well as the carrier screening effect. The type-II InGaN–GaNAs QW structure allows large electron-hole wave function overlap by confining the hole wave function in the GaNAs layer of the QW. The findings based on self-consistent analysis indicate that type-II InGaN-GaNAs QW active region results in superior performance for laser diodes, in comparison to that of conventional InGaN QW. Both the spontaneous emission radiative recombination rate and optical gain of type-II InGaN–GaNAs QW structure are significantly enhanced. Reduction in the threshold current density of InGaN–GaNAs QW lasers is also predicted.
116 citations
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TL;DR: In this article, the transfer of electrons and holes between a quantum well and a quantum dot by exploiting the moving piezoelectric potential modulation induced by an acoustic phonon was demonstrated.
Abstract: It is now possible to acoustically control the transfer of electrons and holes between a quantum well and a quantum dot by exploiting the moving piezoelectric potential modulation induced by an acoustic phonon. The effect has been used to demonstrate a high-frequency single-photon source with tunable emission energy, by acoustically transferring carriers to selected quantum dots.
116 citations