Topic
Quantum well
About: Quantum well is a research topic. Over the lifetime, 44627 publications have been published within this topic receiving 674023 citations. The topic is also known as: QW & quantum potential well.
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TL;DR: The role of dislocation for luminescence in InGaN grown on sapphire substrate by metal organic chemical vapor deposition (MOCVD) method was investigated by cathodoluminescence (CL) and atomic force microscopy (AFM) as discussed by the authors.
Abstract: The role of dislocation for luminescence in InGaN grown on sapphire substrate by metal organic chemical vapor deposition (MOCVD) method was investigated by cathodoluminescence (CL) and atomic force microscopy (AFM). The CL emission area and dark spots between InGaN and GaN layers in InGaN/GaN single quantum well (SQW) and multiple quantum well (MQW) structures showed completely one to one correspondence. These results indicate that dislocations in InGaN work as non-radiative recombination centers. Furthermore it was confirmed that the phase separation in InGaN is caused by spiral growth due to mixed dislocations, and such a growth mechanism is discussed.
110 citations
TL;DR: In this paper, the laser threshold of three-dimensional GaInAsP/InP quantum-box arrays was analyzed and the ideal structure of the quantum box laser was discussed.
Abstract: The laser threshold of three-dimensional GaInAsP/InP quantum-box lasers is analyzed. The optimized quantum-box array laser structure for the lowest threshold current density at room temperature is obtained theoretically, taking into account the effect of carrier leakage. The lowest threshold current densities are 14, 27, and 61 A/cm/sup 2/ for 10, 20, and 40 cm/sup -1/ of cavity loss, respectively. The threshold current density is calculated, taking into account fluctuation in quantum-box size. The ideal structure of the quantum-box laser is discussed. It is pointed out that the modulation-doped structure looks promising for the suppression of carrier leakage. >
110 citations
TL;DR: In this article, a new semiconductor structure that can be fabricated by present day technology and can lead to large quantum interference effects with potential device applications is proposed and analyzed, which can be used for quantum computing applications.
Abstract: In this letter we propose and analyze a new semiconductor structure that can be fabricated by present day technology and can lead to large quantum interference effects with potential device applications.
110 citations
TL;DR: In this paper, the authors analyzed the internal differential efficiency of quantum-well lasers in terms of current spreading, carrier injection into the well, and the radiative efficiency within the well.
Abstract: We have analyzed the internal differential efficiency of quantum-well lasers in terms of current spreading, carrier injection into the well, and the radiative efficiency within the well. We quantify the first two of these processes by extracting information from spontaneous emission measurements as a function of device length, current, and temperature. We show that the carrier injection efficiency is responsible for the temperature dependence of the external differential efficiency of GaInP quantum-well (QW) lasers by comparing values from the slope of the laser power output versus current characteristic with our experimental values for current spreading and injection efficiency.
110 citations
TL;DR: Numerical calculations of the confined eigenstates suggest that the electrons and holes in their ground states are confined to extremely localized one-dimensional filaments at the corners of the hexagonal structure which extend along the length of the nanowire.
Abstract: The electronic properties of thin, nanometer scale GaAs quantum well tubes embedded inside the AlGaAs shell of a GaAs core–multishell nanowire are investigated using optical spectroscopies. Using numerical simulations to model cylindrically and hexagonally symmetric systems, we correlate these electronic properties with structural characterization by aberration-corrected scanning transmission electron microscopy of nanowire cross sections. These tubular quantum wells exhibit extremely high quantum efficiency and intense emission for extremely low submicrowatt excitation powers in both photoluminescence and photoluminescence excitation measurements. Numerical calculations of the confined eigenstates suggest that the electrons and holes in their ground states are confined to extremely localized one-dimensional filaments at the corners of the hexagonal structure which extend along the length of the nanowire.
110 citations