Topic
Quantum well
About: Quantum well is a research topic. Over the lifetime, 44627 publications have been published within this topic receiving 674023 citations. The topic is also known as: QW & quantum potential well.
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TL;DR: In this article, a single quantum well laser with high reflectively coatings has been shown to achieve a threshold current of 0.95 mA for a buried graded-index separate-confinement heterostructure single QW laser with facet reflectivities of ∼70%, a cavity length of 250 μm and an active region stripe width of 1 μm.
Abstract: Unlike conventional semiconductor lasers, single quantum well lasers with high reflectively coatings have dramatically reduced threshold currents as a result of the smaller volume of the (active) quantum well region. A cw threshold current of 0.95 mA was obtained for a buried graded‐index separate‐confinement heterostructure single quantum well laser with facet reflectivities of ∼70%, a cavity length of 250 μm, and an active region stripe width of 1 μm.
109 citations
TL;DR: In this paper, the design of THz emitters based on the quantum cascade scheme is analyzed and modeled in terms of a fully three-dimensional Monte Carlo approach; this allows for the proper inclusion of both carrier-carrier and carrier-phonon scattering mechanisms.
Abstract: Strategies and concepts for the design of THz emitters based on the quantum cascade scheme are analyzed and modeled in terms of a fully three-dimensional Monte Carlo approach; this allows for a proper inclusion of both carrier–carrier and carrier–phonon scattering mechanisms. Starting from the simulation of previously published far-infrared emitters, where no population inversion is achieved, two designs are proposed. The first one follows the well-established chirped-superlattice scheme whereas the second one employs a double-quantum well superlattice to allow energy relaxation through optical phonon emission. For both cases a significant population inversion is predicted at temperatures up to 80 K.
109 citations
TL;DR: In this paper, it was shown that a GaAs quantum well, sandwiched between two epitaxial AlxGa1-xAs(x ∼ 0.4) confining layers, loses its effectiveness as a collector of excess carriers and as a source of recombination radiation for well dimensions Lz < 100 A.
109 citations
TL;DR: In this article, an AlGaN multi-quantum-well (MQW) DUV light-emitting diodes (LEDs) fabricated on sapphire substrates with emission at 227 nm were demonstrated.
Abstract: AlGaN multi-quantum-well (MQW) deep-ultraviolet (DUV) light-emitting diodes (LEDs) fabricated on sapphire substrates with emission at 227 nm are demonstrated. A remarkable enhancement in the DUV LED output power was achieved by using a thin AlGaN quantum well only 1.3 nm in thickness, with atomically flat hetero-interfaces, together with an AlN buffer layer of reduced threading dislocation density. The AlGaN-MQW DUV LEDs exhibited single emission peaks. The output power was 0.15 mW with injection current of 30 mA and the maximum external quantum efficiency was 0.2%, under room temperature pulsed operation.
109 citations
TL;DR: In this article, dark line defect formation in GaAs/AlGaAs and InGaAs/alGaAs quantum well lasers is compared. And the authors show that dark line defects have high growth velocity along
Abstract: Dark-line defect formation is compared in GaAs/AlGaAs and strained InGaAs/AlGaAs quantum well lasers. Dark-line defects have high growth velocity along
109 citations