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Quantum well

About: Quantum well is a research topic. Over the lifetime, 44627 publications have been published within this topic receiving 674023 citations. The topic is also known as: QW & quantum potential well.


Papers
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Journal ArticleDOI
TL;DR: Resonant two-photon absorption to the biexciton state in the same structure is found to account for a quantum beating phenomenon involving the bIExciton and exciton states in a more complex three-level system than hitherto investigated.
Abstract: Generation of cold excitons in GaAs quantum wells is shown to lead to enhanced condensation to the biexciton state under cw illumination. Resonant two-photon absorption to the biexciton state in the same structure is found to account for a quantum beating phenomenon involving the biexciton and exciton states in a more complex three-level system than hitherto investigated.

105 citations

Journal ArticleDOI
TL;DR: In this article, the strong coupling regime occurring between a Tamm plasmon (TP) mode and an exciton from inorganic quantum wells (QWs) was observed.
Abstract: We report on the observation of the strong coupling regime occurring between a Tamm plasmon (TP) mode and an exciton from inorganic quantum wells (QWs). The sample is formed by a silver thin film deposited onto an AlAs/GaAlAs Bragg reflector containing InGaAs QWs located in the high refractive index layers. Angular resolved reflectometry experiments evidence a clear anticrossing in the dispersion relations, a signature of the strong coupling regime. The Rabi splitting energy is 11.5 meV. The experimental data are in very good agreement with simple transfer matrix calculations. The emission from low and high energy TP/exciton polaritons is also demonstrated.

105 citations

Journal ArticleDOI
P.J.A. Thijs1, T. van Dongen1
TL;DR: In this article, the performance of a hybrid LP-MOVPE/LPE with a strained-layer active region was demonstrated for the first time, achieving a CW threshold current of 10 mA, differential quantum efficiency of 82%, T0 of 97 K and maximum output powers/facet as high as 70 mW CW and 180 mW for pulsed operation.
Abstract: Buried heterostructure Ga0.2In0.8As strained-layer (strain 1.8%) separate confinement, multiple quantum well laser diodes emitting at 1.5 μm were fabricated by hybrid LP-MOVPE/LPE. Improved performance as a result of the application of a strained-layer active region is demonstrated for the first time. A CW threshold current of 10 mA, differential quantum efficiency of 82%, T0 of 97 K and maximum output powers/facet as high as 70 mW CW and 180 mW for pulsed operation were measured. Lifetests at 60°C heat-sink temperature and 5 mW output power show almost no degradation after 2000 h.

105 citations

Journal ArticleDOI
TL;DR: In this paper, the authors analyzed the excitonic properties in quantum-wire structures (QWS) by taking into account the band-mixing effects in the valence band of the structure and found that the effective mass value in the wire direction at the zone center of the lowest heavy-hole-like subband is as small as 0.027 m/sub 0/ for GaAs/AlGaAs QWS.
Abstract: The excitonic properties in quantum-wire structures (QWS) are analyzed by taking into account the band-mixing effects in the valence band of the structure. The effective mass value in the wire direction at the zone center of the lowest heavy-hole-like subband is found to be as small as 0.027 m/sub 0/ for GaAs/AlGaAs QWS. This reduced effective mass and the related nonparabolicity of the subband structure play a significant role in determining the exciton properties. Using these results, the maximum excitonic contribution to the refractive index value is estimated to be 0.59, i.e. 17.4% of the bulk value for a GaAs/Al/sub 0.4/Ga/sub 0.6/As QWS with a 50 A*50 AA cross section. This value is six times larger than that in the 50-AA quantum well. With an electric field of 8*10/sup 4/ V/cm perpendicular to the heterointerface, a maximum refractive index change 30% larger than this value is estimated. >

105 citations

Journal ArticleDOI
G.P. Li1, T. Makino1, R.S. Moore1, N. Puetz1, K.-W. Leong1, H. Lu1 
Abstract: 1.55- mu m gain-coupled InGaAsP-InP distributed feedback (DFB) lasers which use a strained-layer multi-quantum-well (MQW) active grating for a mixed index and gain coupling have been fabricated and studied. The lasers exhibit distinct longitudinal-mode behaviour due to gain-coupling effects, including a high single-mode yield. Cavity length dependence of the mode behavior has been experimentally studied and simulated using a transfer-matrix method. Both experimental and theoretical results indicate that the shorter cavity lasers with the present structure have higher kappa /sub gain/L/ kappa /sub inde/ ratios and wider Fabry-Perot mode spacing than the longer cavity ones; these features enable the shorter cavity lasers to have a high single-mode yield (90%) and a high side-mode-suppression ratio (55 dB). >

104 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023262
2022615
2021560
2020712
2019859
2018891