scispace - formally typeset
Search or ask a question
Topic

Quantum well

About: Quantum well is a research topic. Over the lifetime, 44627 publications have been published within this topic receiving 674023 citations. The topic is also known as: QW & quantum potential well.


Papers
More filters
Journal ArticleDOI
TL;DR: In this article, the authors improved the extraction efficiency of emission light from the InGaN-based light-emitting diode (LED) chips grown on sapphire substrates.
Abstract: We markedly improved the extraction efficiency of emission light from the InGaN-based light-emitting diode (LED) chips grown on sapphire substrates Two new techniques were adopted in the fabrication of these LEDs One is to grow nitride films on the patterned sapphire substrate (PSS) in order to scatter emission light Another is to use the Rh mesh electrode for p-GaN contact instead of Ni/Au translucent electrode in order to reduce the optical absorption by the p-contact electrode We fabricated near-ultraviolet (n-UV) and blue LEDs using the above-mentioned techniques When the n-UV (400 nm) LED was operated at a forward current of 20 mA at room temperature, the output power and the external quantum efficiency were estimated to be 220 mW and 355%, respectively When the blue (460 nm) LED was operated at a forward current of 20 mA at room temperature, the output power and the external quantum efficiency were estimated to be 188 mW and 349%, respectively

390 citations

Journal ArticleDOI
TL;DR: Observation experimentale de la bistabilite intrinseque dans une structure Al 0-4 Ga 0,6 As/GaAs/Al 0,4 Ga0,4 As; interpretation en termes de variations de l'energie des etats electroniques dans le puits en fonction de the densite du courant-tunnel.
Abstract: A simple quantum system, the semiconductor-based double-barrier resonant-tunneling structure, exhibits intrinsic bistability which we attribute to the feedback dependence of the energy of the electronic states in the well on the tunneling current density.

387 citations

Journal ArticleDOI
TL;DR: In this paper, a momentum-conservation approximation was obtained for the scattering rates and momentum-relaxation rates of an electron in a quasi-two-dimensional quantum well interacting with acoustic, optical and intervalley modes via deformation potential and with longitudinal optical modes via the polar interaction.
Abstract: Approximate analytic expressions are obtained for the scattering rates and momentum-relaxation rates of an electron in a quasi-two-dimensional quantum well interacting with acoustic, optical and intervalley modes via the deformation potential and with longitudinal optical modes via the polar interaction. These analytic expressions are obtained using a momentum-conservation approximation. The threshold for optical phonon emission, unlike the case in the bulk, is abrupt. All scattering rates are energy-independent and are inversely proportional to L, the thickness of the well. The momentum-relaxation rate associated with the absorption of polar optical phonons, on the other hand, proves to be proportional to L. These properties are shown to lead to a negative differential resistance for pure polar mode scattering, and to the existence of a runaway field for deformation-potential scattering. The self-energy associated with the emission of polar optical phonons at absolute zero is shown to be divergent unless the polar interaction is screened, and some consequences of this for laser and other optical processes are pointed out. The description of scattering by perturbation theory breaks down in very narrow wells.

387 citations

Journal ArticleDOI
TL;DR: In this article, the intrinsic radiative lifetime of excitons in quantum wells arising from the lack of translational invariance along the growth direction was calculated for 100 A wide GaAs-Ga1−x Al x As quantum wells.

385 citations

Journal ArticleDOI
TL;DR: In this article, the authors calculate the electric field dependence of the linear and the third-order nonlinear intersubband optical absorption coefficients of a semiconductor quantum well in the infrared regime.
Abstract: Analytic forms of the linear and the third-order nonlinear optical intersubband absorption coefficients are obtained for general asymmetric quantum well systems using the density matrix formalism, taking into account the intrasubband relaxation. Based on this model, we calculate the electric field dependence of the linear and the third-order nonlinear intersubband optical absorption coefficients of a semiconductor quantum well. The energy of the peak optical intersubband absorption is around 100 meV (wavelength is 12.4 μm). Thus, electrooptical modulators and photodetectors in the infrared regime can be built based on the physical mechanisms discussed here. The contributors to the nonlinear absorption coefficient due to the electric field include 1) the matrix element variation and 2) the energy shifts. Numerical results are illustrated.

384 citations


Network Information
Related Topics (5)
Band gap
86.8K papers, 2.2M citations
93% related
Photoluminescence
83.4K papers, 1.8M citations
93% related
Quantum dot
76.7K papers, 1.9M citations
92% related
Thin film
275.5K papers, 4.5M citations
92% related
Silicon
196K papers, 3M citations
91% related
Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023262
2022615
2021560
2020712
2019859
2018891